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    FW201 Search Results

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    FW201 Price and Stock

    Passive Plus Inc 1111C471FW201X

    CAP CER 470PF 200V C0G/NP0 1111
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    DigiKey 1111C471FW201X Reel 500 500
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    Harwin G125-FW20150L94

    1.25MM F ON 28AWG 150MM
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    DigiKey G125-FW20150L94 Bulk 261 1
    • 1 $3.55
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    Mouser Electronics G125-FW20150L94 192
    • 1 $4.17
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    Bristol Electronics G125-FW20150L94 170
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    TTI G125-FW20150L94 Each 220
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    Avnet Abacus G125-FW20150L94 8 Weeks 220
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    Harwin G125-FW20150F94

    1.25MM F/F ON 28AWG 150MM
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    DigiKey G125-FW20150F94 Bulk 28 1
    • 1 $5.22
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    Mouser Electronics G125-FW20150F94 40
    • 1 $6.21
    • 10 $4.28
    • 100 $4.07
    • 1000 $3.24
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    Central Technologies CTHFW2014F-220M

    SMD SHLDED POWER INDUCTOR
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    DigiKey CTHFW2014F-220M Reel 2 1
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    IDEC Corporation AOFW201-S

    22MM PUSHBUTTON BLUE
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    DigiKey AOFW201-S Bulk 1
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    Newark AOFW201-S Bulk 1
    • 1 $61.21
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    RS AOFW201-S Bulk 1
    • 1 $51.95
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    Master Electronics AOFW201-S
    • 1 $53.57
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    Sager AOFW201-S 1
    • 1 $52.1
    • 10 $49.8
    • 100 $47.03
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    FW201 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FW201 Sanyo Semiconductor N-Channel Silicon MOS FET Very High-Speed Switching Applications Original PDF
    FW201 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    FW201 Sanyo Semiconductor Medium Power Output MOSFETs Scan PDF
    FW201 Sanyo Semiconductor Ultra High Speed Switching Transistors Scan PDF

    FW201 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Micron Q-Flash memory

    Abstract: FW501 Micron data sheet Q-Flash sample code read and write flash memory FW201 FW207 MT28F128J3 MT28F128J3FS-15 MT28F320J3 MT28F320J3FS-11
    Text: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3‡, MT28F640J3, MT28F320J3‡ Q-FLASHTM MEMORY FEATURES 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)


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    PDF 128Mb, MT28F128J3, MT28F640J3, MT28F320J3 56-Pin x8/x16 128KB 128Mb) Micron Q-Flash memory FW501 Micron data sheet Q-Flash sample code read and write flash memory FW201 FW207 MT28F128J3 MT28F128J3FS-15 MT28F320J3 MT28F320J3FS-11

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


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    PDF

    w201 mosfet

    Abstract: FW201
    Text: FW 201 N- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • High density mounting is possible because of the complex type which holds two chips of a low on-resistance, Very-high speed switching and 2.5-volt-drive, N channel MOSFET in one package.


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    PDF 1000mm FW201 950713TM2fXHD-1/2 w201 mosfet FW201

    FW201

    Abstract: FW203 LA5621M LA5621V MFP14 SSOP16
    Text: Ordering number :EN5640A Monolithic linear IC LA5621M, 5621V Lithium-Ion Battery Charge Control IC Overview The LA5621M and LA5621V are external charge control ICs for lithium-ion batteries. These ICs are ideally suited for on/off control of external power MOSFETs in systems


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    PDF EN5640A LA5621M, LA5621M LA5621V FW201 FW203 MFP14 SSOP16

    IRF9310

    Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional


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    PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution

    smoke detection using microcontroller

    Abstract: No abstract text available
    Text: Ordering number :EN5640A Monolithic linear IC LA5621M, 5621V Lithium-Ion Battery Charge Control IC Overview The LA5621M and LA5621V are external charge control ICs for lithium-ion batteries. These ICs are ideally suited for on/off control of external power MOSFETs in systems


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    PDF EN5640A LA5621M, LA5621M LA5621V smoke detection using microcontroller

    2sk3436

    Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
    Text: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis


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    PDF TND023F FX504 CPH5504 MCH5805 FX505 HPA72R TND024F FX506 MCH3301 TND024MP 2sk3436 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744

    KSS-210A

    Abstract: KSS210A sanyo SF90 SH1106 SOAD70A KSS150A PEA1030 KSS210B SOALP1200 cdm12.1
    Text: Manufacturer Model Pickup AIWA CAB500 KSS150A AIWA CADW500 KSS150A AIWA CNX400 KSS210A AIWA CSDEX1 KSM2101BA AIWA CSDEX1 KSS210B AIWA CSDEX210 KSM2101BA AIWA CSDEX210 KSS210B AIWA CSDEX310 KSM2101BA AIWA CSDEX310 KSS210B AIWA CVDZ93W KSS150A AIWA CX810Z KSS210A


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    PDF CAB500 CADW500 CNX400 CSDEX210 CSDEX310 CVDZ93W CX810Z CXL60 KSS-210A KSS210A sanyo SF90 SH1106 SOAD70A KSS150A PEA1030 KSS210B SOALP1200 cdm12.1

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


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    PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    Untitled

    Abstract: No abstract text available
    Text: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3, MT28F640J3, MT28F320J3 TM Q-FLASH MEMORY Features Figure 1: 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)


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    PDF 128Mb, MT28F128J3, MT28F640J3, MT28F320J3 56-Pin x8/x16 128KB 128Mb)

    fw209

    Abstract: No abstract text available
    Text: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3‡, MT28F640J3, MT28F320J3 Q-FLASHTM MEMORY FEATURES 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)


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    PDF 128Mb, x8/x16 128KB 128Mb) 150ns/25ns 120ns/25ns 110ns/25ns fw209

    2sk3436

    Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
    Text: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。


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    PDF 40610HKPC TC-00002289 CPH5815 MCH5815 MCH6629 MCH6649 CPH6610 CPH6614 SCH1411 SCH1436 2sk3436 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970

    FW406

    Abstract: FW509 FW407 MT28F128J3FS-12 MET MT28F640J3RG-12 MT28F128J3RG-15ET flash fw206 FW206 MT28F128J3RG-15 FW510
    Text: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY TM MT28F128J3‡, MT28F640J3, MT28F320J3 Q-FLASH MEMORY Features Figure 1: 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)


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    PDF 128Mb, MT28F128J3, MT28F640J3, MT28F320J3 x8/x16 128KB 128Mb) 150ns/25ns FW406 FW509 FW407 MT28F128J3FS-12 MET MT28F640J3RG-12 MT28F128J3RG-15ET flash fw206 FW206 MT28F128J3RG-15 FW510

    FW407

    Abstract: FW509 MT28F128J3RG-15 ET flash fw206 fw406 sus material 304 FQ510 fw209 MT28F128J3 MT28F320J3
    Text: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3, MT28F640J3, MT28F320J3 TM Q-FLASH MEMORY Features Figure 1: 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)


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    PDF 128Mb, MT28F128J3, MT28F640J3, MT28F320J3 56-Pin x8/x16 128KB 128Mb) FW407 FW509 MT28F128J3RG-15 ET flash fw206 fw406 sus material 304 FQ510 fw209 MT28F128J3 MT28F320J3

    IRF 850 mosfet

    Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
    Text: Medium Output Power MOSFETs l N ew P a d o - g e : T S S O P 8 *0ne size sm aller than S0P8. Best su ited fo r higher performance and effic ie n c y of battery-pow ered equipment and av ailab le fo r h igh-density surface mount. S O P S ^Reduced surface mount area by 502 and thickness by 30Z over the SC-63(TP).package.


    OCR Scan
    PDF SC-63 T0-126LP T0-220CI T0-220ML SC-67, OT-186) O-220FIÂ SC-67KS0T-189} T0-220MF lsDwATT220> IRF 850 mosfet Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382

    2SJ437

    Abstract: 2SK244
    Text: il ucakon Examples lUsing a Schotfky Barner diode AC a d a p te r Using a power MOSFET) ; •>- - ■►! — ■-* A C a d a p te r o u tp u t o - o u tp u t Battery Battery ■ Device Lineup ♦ Schottky Barrier Diodes Package SB20W03P PCP SB40W03T TP-FA


    OCR Scan
    PDF SB20W03P SB40W03T SBA100-04ZP SBA160-Q4ZP SBA50-04Y SBA10Q-04Y SBA160-04Y characteristicsSJ466 2SJ437 2SJ257 2SK244

    2SK2637

    Abstract: No abstract text available
    Text: • LD Series Lineup Type No. Package V OSS * * - V (V) *0 o Pd m Electrical characteristics at Ta = 25°C « tm » 'iifflP. Absolute maximum 1 VDss = 12 V, P-channel m Vostofl) min to max M 2SJ316 2SJ335 1.0 ±15 PCP ±10 XP5 FX601 XP6 ±15 Vg s = 4V VfigstOV


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    PDF 2SJ316 2SJ335 2SJ381 FX207 FX601 2SJ336 2SJ337 2SJ382 2SJ383 2SJ419 2SK2637

    FW201

    Abstract: 2SJ469
    Text: il- i •*'iti i -*•» ■ Overview ^R H p r Currently, portable information equipment such as notebook computers, video cam eras and portable telephones are rapidly o e c e r ig more compact and lightweight. In particular, iarge-capacity, high-performance battery-pack supplies nave become essential. S A N Y O -;as


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    PDF 2SK2557 FW103 FW201 FW202 FW203 40/58T 115/165T 1000mm2 2SJ419 2SJ468 2SJ469

    2SK1731

    Abstract: 2SK2637 2SK1871 2SK2626 2sk2636 2SK2438 2SK2153 2sk2406 2SK1474 2SK1920
    Text: Continued from previous page Absolute maximum ratings Applications M VGSS Id V (A) (W) VDSS Electrical characteristics (Ta • 25 C ) RDSCmO @ ID PD Teh (1C) VGSS (off) (V) ID ■V6S ves (V) & |Yfs| 0 VDS ' ID slif Type Mo. Package type (A) 2SK1474 TP Ultrahigh-speed switching


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    PDF 2SK1474 2SK1475 2SK1920 2SK2046 2SK2153 2SK2619V 2SK2626V 2SK2634V 2SK2164 2SK2321 2SK1731 2SK2637 2SK1871 2SK2626 2sk2636 2SK2438 2sk2406

    Untitled

    Abstract: No abstract text available
    Text: • Overview Currently, battery-operated portable equipment sucn as notebook computers, portable telephones, video cameras n office a ./'j :v -■ equipment and AV equipment are becoming increasingly common. Accordingly, many devices are required witn low-voltage C" ve:- ar 3


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    PDF 2SJ381 FX207 2SJ382 2SJ383 2SJ419 2SJ420 FW101 2SK2316 FX208 2SK2317

    d1878

    Abstract: D1887 C4106 D1880 D1825 transistors D1878 c3987 C4161 D1651 k1459
    Text: Transistors Type Number SAVYO In dex *:New products for Type No. Package Page Type No. Package Page Type No. Package 2SA Type NP 2SA1016.il A1177 SPA AI207 NP A1208 MP A1209 T0126 A 1246 NP A 1248 T0126 il A1249 A 1252 CP A 1253 SPA A1256 CP il Al 257 A1258


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    PDF A1527 A1528 A1537 A1540 A1573 A1574 A1575 A1580 A1590 A1607 d1878 D1887 C4106 D1880 D1825 transistors D1878 c3987 C4161 D1651 k1459