Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    G007333 Search Results

    G007333 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MPS6601

    Abstract: MPS6602 transistor 7
    Text: SAMSUNG SEMICONDUCTOR INC 14E MPS6602 D 1 7*^4142 G007333 i jj NPN EPITAXIAL SILICON TRANSISTOR r " r T-29-21 AMPLIFIER TRANSISTOR • C o lle cto r-E m itte r Voltage: V c e o = 4 0 V • C o lle cto r D issipation: P c max =825mW ABSOLUTE MAXIMUM RATINGS (T. =25°C)


    OCR Scan     		PDF MPS6602 T-29-21 825mW MPS6601 VMPS6601 100fiA, 100mA, 500mA, 1000mA, transistor 7

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG S E M I C O ND U C T O R INC 14E MPS6602 D | 7*^4140 G007333 i jj NPN EPITAXIAL SILICON TRANSISTOR “ " r T-29-21 AMPLIFIER TRANSISTOR • C ollector-Em itter Voltage: Vcso=40V • C ollector Dissipation: Pc max =825mW ABSOLUTE MAXIMUM RATINGS (T, =25°C)


    OCR Scan     		PDF G007333 MPS6602 825mW T-29-21 MPS6601