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Vishay Semiconductors VS-GB75DA120UP IGBT MODULE 1200V 658W SOT227
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	VS-GB75DA120UP	Bulk			180	1 - 10 - 100 - 1000 $20.375 10000 $20.375	Buy Now

GB75DA120UP Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
VS-GB75DA120UP Abstract: No abstract text available Text: Not recommended for new designs, use VS-GB90DA120U VS-GB75DA120UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy	Original	VS-GB90DA120U VS-GB75DA120UP OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A VS-GB75DA120UP	PDF
Untitled Abstract: No abstract text available Text: GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package	Original	GB75DA120UP OT-227 E78996 2002/95/EC OT-22trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package	Original	GB75DA120UP OT-227 E78996 2002/95/EC OT-22hay 11-Mar-11	PDF
gb75da120up Abstract: transistor d 1680 ultrafast igbt Text: GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package	Original	GB75DA120UP OT-227 E78996 2002/95/EC 18-Jul-08 gb75da120up transistor d 1680 ultrafast igbt	PDF
Untitled Abstract: No abstract text available Text: GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package	Original	GB75DA120UP OT-227 2002/95/EC OT-227 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package	Original	GB75DA120UP OT-227 E78996 2002/95/EC OT-22hay 11-Mar-11	PDF
GB75DA120UP Abstract: IGBT 75 D Text: GB75DA120UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package	Original	GB75DA120UP OT-227 2002/95/EC 18-Jul-08 GB75DA120UP IGBT 75 D	PDF
VS-GB75DA120UP Abstract: No abstract text available Text: Not Available for New Designs, Use VS-GB90DA120U VS-GB75DA120UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy	Original	VS-GB90DA120U VS-GB75DA120UP OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A VS-GB75DA120UP	PDF