GM001
Abstract: GM006-SD00 GM-001
Text: PS-CVE006-0508 Micro DC-DC converter GM006-SD00 Features ・ New product, high efficiency and micro converter GM006 series ・ Higher power density in thin package tham existing models *improved 23% from previous product GM001 model ・ High Switching frequency: External I/O capacitor can be reduced
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PS-CVE006-0508
GM006-SD00
GM006
GM001
converterGM006-SD00
600mA
30mVp-p
100mA
100mAOutput
GM006-SD00
GM-001
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BPX43
Abstract: Q62702-P16 Q62702-P16-S2 Q62702-P16-S3 Q62702-P16-S4 SIEMENS Phototransistors Siemens photodiode
Text: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor Radiant sensitive area Chip position 2.7 00.45 \ . 1^.5 12.5 ^ —i . 5.1 BPX 43 \ \vb> E C B A ? ' ' ' t 00 CO '«sí '•sj- x#;x: 1 4.8 —» 6.2 ♦ 5.4 GM006019 O “o Approx. weight 1.0 g
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GM006019
BPX43
Q62702-P16
Q62702-P16-S2
Q62702-P16-S3
Q62702-P16-S4
SIEMENS Phototransistors
Siemens photodiode
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAIAs-Lumineszenzdiode 660 nm GaAIAs Light Emitting Diode (660 nm) SFH 4860 Chip position 14.5 12.5 LO o ö (2 .7 ) E 0)1 CO LO cp Q _- c \i w J Cathode 4.05 3.45 Flat glass cap 02.54 GM006983 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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GM006983
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siemens maf
Abstract: No abstract text available
Text: SIEMENS GaAIAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode (660 nm) SFH 4860 Chip position - 12.5 " E o> e -f _7 o LO Q_ Csi « 04.8 LO o Q y Cathode 4.05 Flat glass cap 02.54 GM006983 M aße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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GM006983
OHR01872
siemens maf
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Untitled
Abstract: No abstract text available
Text: Bauelemente fur die LW L-Technik und Leistungslaser Maflbilder inmm Figure 1 Outline drawings (in mm) SFH 250, SFH 750 SFH 450 Area nol flat ^ tstjta Anode Cathode 1.2 L Sem iconductor Devices for FiberOptic-System s and High-Power Lasers 29 27 J 4.6 7.8 .
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CEX06526
SFH350-V
draw443
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BPX61
Abstract: Siemens Si PIN photodiode GM006011
Text: SIEMENS BPX 61 Silicon Photodiode Dimensions in inches mm .570 ¡14.5) .134 (3.4) '.116(3.0) .491 (12.5) Cathode 'SI Radiant sensitive area t 0.373(9.5) 0 .354 (9.0) ‘0 .326 (8.3) 0.314(8.0) .200 (5.08) Tc — 0 .018 (0.45) .069(1.75) .061 (1.55)" >39(1.0)
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GM006011
Xa850nm
BPX61
Siemens Si PIN photodiode
GM006011
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UCS-5801H
Abstract: UCS-5800H
Text: 5 8 0 0 an» 5 8 0 1 MIL-STD-S8U COMF1 J A M BiMOS II LATCHED DRIVERS Simplifying interface between LSI and peripheral power loads, the hermetically sealed UCS5800H 4-bit and UCS5801H (8-bit) latched drivers combine the advantages of CMOS logic and control and highvoltage, high-current bipolar output buffers. Typical applications include
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UCS5800H
UCS5801H
UCS-5801H
UCS-5800H
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Bpx 95
Abstract: bpx61
Text: SIEMENS BPX61 Silicon Photodiode Dimensions in inches mm .134 (3.4) '.118(3.0) .570 (14.5) .491 (12.5) Cathode Radiant sensitive area \ 0 .373 (9.5) 0 .354 (9.0) 0 .326 (8.3) 0 .314(8.0) .200 (5.08) Jr 0.236 (6.0) 0.228 (5.8) L .L T“ c 0 .018(0.45) .069(1.75)
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BPX61
18-pln
fl535t
Bpx 95
bpx61
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UCS5810H
Abstract: UCS5810H883 UCS5815H Serial Latched Source Driver
Text: ucn/ 5810 MIL-STD-883 COMPLIANT BiMOS n 10-BIT SERIAL-INPUT, LATCHED SOUBCE DRIVER Combining low-power CM O S logic with bipolar source drivers, Type UCS5810H will simplify many display-system designs. Primarily intended for use with vacuum-fluorescent displays, this BiMOS 10-bit
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MIL-STD-883
PP-029
UCS5810H
UCS5810H883
UCS5815H
Serial Latched Source Driver
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Untitled
Abstract: No abstract text available
Text: SBH 51414X BIDI Transceiver Optical Module 1300 nm Em itting-/1550 nm Receiving Function, High Power • • • • • • Designed for application in passive-optical networks Integrated Wavelength Division Multiplexer Bidirectional Transmission in 2nd and 3rd optical window
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itting-/1550
1414A
51414G
062702-Pxxxx
51414X
GM006907
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STH81002Z
Abstract: laser diode 1550 nm 81001Z STH81001Z
Text: C IEM C M C J IL IT Ib lU J 1550 nm Laser in Coaxial TO -Package STH 81001Z • • • • Designed for appiication in fiber-optic networks Laser Diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary photodiode at rear mirror for monitoring and
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81001Z
81002Z
Q62702-P3051
81001Z
GM006686
STH81002Z
laser diode 1550 nm
STH81001Z
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Untitled
Abstract: No abstract text available
Text: 5810 M IL-STD-NN H C O M F 1 J A M BiMOS U 10-BIT SERIAL-INPUT, LATCHED SOURCE DRIVER OUT g Combining low-power CMOS logic with bipolar source drivers, Type UCS5810H will simplify many display-system designs. Primarily intended for use with vacuum-fluorescent displays, this BiMOS 10-bit
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10-BIT
UCS5810H
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SFH302
Abstract: SFH203 IRF 426
Text: Si-Fotodetektoren und IR-Lumineszenzdioden Silicon Photodetectors and Infrared Emitters Outline drawings in mm Maßbilder (in mm) Figure 1 S u r 'a c e no* f la t in i Ö! °! Q .8 n a x ° G 1 GND 9.0 y t ' 0.5 S. ¡ 5.9 7.8 7.5 oo m ö o ¡ f t 1 C athode
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GE006270
SFH302
SFH203
IRF 426
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SFH 910
Abstract: BPX61 Q62902-B166 SFH 910 235 SFH463 sfh 309 fr SFH405-2 l71ii IM 317 ld271a
Text: IR-Lumineszenzdioden Infrared Emitters 7. Infrarot Indikatorkarte 7. Infrared Indicator Card B e i B e s tr a h lu n g le u c h t e t d ie a k tiv e F lä c h e o r a n g e a u f, w o d u r c h IR - S tra h W h e n th e a c tiv e a r e a is e x p o s e d to r a d ia tio n it e m its o r a n g e lig h t, th u s
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Q62901-B79
Q62902-B166
310/FA
SFH 910
BPX61
Q62902-B166
SFH 910 235
SFH463
sfh 309 fr
SFH405-2
l71ii
IM 317
ld271a
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Untitled
Abstract: No abstract text available
Text: M il.-S T D -S iS S C O M BiMOS n 10-BIT SERIAL-INPUT, LATCHED SOURCE DRIVER 18 H h LAI C ^i j 17 OUT10 16 SERIAL DATA OUT VBB 15 14 RE OUT* BLNK 13 LOAD SUPPLY SERIAL DATA IN BLANKING 12 OUT, 11 out2 10 out3 Dwg. PP-029 ABSOLUTE MAXIMUM RATINGS at +25°C Free-Air Temperature
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10-BIT
OUT10
PP-029
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Siemens 221
Abstract: No abstract text available
Text: SIEMENS Silizium-Differential-Fotodiode Silicon Differential Photodiode Chip position SFH 221 S R a d ia n t sen sitive a re a t— 2.0 A node in o ro o ooo o i cdOO CO LT O ) r 'S. • . “ n . B u . Ím w 5 l 3 .0 1 4 .5 A node A / " 1 2 .5 “ M etal c ase
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GM006639
Siemens 221
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silizium-Fotodiode für den sichtbaren Spektralbereich Silicon Photodiode for the visible spectral range Chip position Cathode 1.75 1.55 0 0 .4 5 -L LO O í'O O en o> oo co ^ ^ r ~ r 0.3m ax- P 3.4 3.0 A. BPW 21 Radiant sensitive area / 1* im « 14.5
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GM006011
BPW21
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Untitled
Abstract: No abstract text available
Text: BPX60 SIEMENS Enhanced Blue Sensitivity Silicon PhotocHode Dimensions in inches mm .134(3.4) *.118(3.0) .570(14.5) .491 (12.5) Cathode T _L_ 0 .373 (9.5) 0 .354 (9.0) fe .326 (8.3) 0 .314 (8.G) .200 (5.08) ~rc Radiant sensitive area _L 0.236(6.0) 0.228 (5.8)
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BPX60
GM006011
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