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    H01N60S Search Results

    H01N60S Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    H01N60S Hi-Sincerity Mocroelectronics N-Channel Power Field Effect Transistor Original PDF
    H01N60SI Hi-Sincerity Mocroelectronics N-channel High Voltage MOSFET Original PDF
    H01N60SJ Hi-Sincerity Mocroelectronics N-channel High Voltage MOSFET Original PDF

    H01N60S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOSFET MARK y2

    Abstract: H01N60S H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1
    Text: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to


    Original     		PDF MOS200501 H01N60S 200oC 183oC 217oC 260oC 245oC H01N60SI, H01N60SJ MOSFET MARK y2 H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1

    MOSFET MARK y2

    Abstract: transistor mark code t1 01N60 y1 marking code transistor MOSFET MARK H1 marking code n60 mosfet y1 transistor mark code H1 H01N60S H01N60SI
    Text: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2010.11.10 Page No. : 1/6 MICROELECTRONICS CORP. H01N60S Series H01N60S Series Pin Assignment 3-Lead Plastic TO-92 Package Code: A Pin 1: Gate Pin 2: Drain Pin 3: Source N-Channel Power Field Effect Transistor


    Original     		PDF MOS200501 H01N60S 183oC 217oC 260oC 245oC 10sec H01N60SI, MOSFET MARK y2 transistor mark code t1 01N60 y1 marking code transistor MOSFET MARK H1 marking code n60 mosfet y1 transistor mark code H1 H01N60SI

    MOSFET MARK y2

    Abstract: MOSFET MARK H1 marking code k1 H01N60S marking A1 TRANSISTOR marking y1 mosfet k 61 y1 mosfet y1 PB40 H01N60SI
    Text: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2006.08.31 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to


    Original     		PDF MOS200501 H01N60S 200oC 183oC 217oC 260oC 245oC 10sec MOSFET MARK y2 MOSFET MARK H1 marking code k1 marking A1 TRANSISTOR marking y1 mosfet k 61 y1 mosfet y1 PB40 H01N60SI