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    HB52E169E1 Search Results

    HB52E169E1 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HB52E169E12-A6F Renesas Technology 128 MB Registered SDRAM DIMM 16-Mword x 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 16 M x Original PDF
    HB52E169E12-B6F Hitachi Semiconductor DRAM Module, SDRAM, 128MByte Density, 3.3V Supply, DIMM Package Original PDF
    HB52E169E1-A6D Renesas Technology 128 MB Registered SDRAM DIMM 16-Mword x 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 16 M x Original PDF
    HB52E169E1-B6 Renesas Technology 128 MB Registered SDRAM DIMM 16-Mword x 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 16 M x Original PDF
    HB52E169E1-B6D Renesas Technology 128 MB Registered SDRAM DIMM 16-Mword x 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 16 M x Original PDF

    HB52E169E1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: HB52E169E12-F 128 MB Registered SDRAM DIMM 16-Mword x 72-bit, 100 MHz Memory Bus, 1-Bank Module 18 pcs of 16 M × 4 Components PC100SDRAM ADE-203-1055A (Z) Rev. 1.0 Mar. 30, 2000 Description The HB52E169E12 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed


    Original
    PDF HB52E169E12-F 16-Mword 72-bit, PC100SDRAM ADE-203-1055A HB52E169E12 64-Mbit HM5264405FTT) Hitachi DSA00276

    transistor a6f

    Abstract: Hitachi DSA00164 Nippon capacitors
    Text: x HB52E169E12-F 128 MB Registered SDRAM DIMM 16-Mword x 72-bit, 100 MHz Memory Bus, 1-Bank Module 18 pcs of 16 M × 4 Components PC100SDRAM ADE-203-1055 (Z) Preliminary Rev. 0.0 Apr. 16, 1999 Description The HB52E169E12 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed


    Original
    PDF HB52E169E12-F 16-Mword 72-bit, PC100SDRAM ADE-203-1055 HB52E169E12 64-Mbit HM5264405FTT) transistor a6f Hitachi DSA00164 Nippon capacitors

    CDC2509

    Abstract: BST R68 Nippon capacitors
    Text: HB52E169E1-B6 128 MB Registered SDRAM DIMM 16-Mword x 72-bit, 100 MHz Memory Bus, 1-Bank Module 18 pcs of 16 M × 4 Components PCSDRAM-0.8 ADE-203-891 (Z) Preliminary Rev. 0.0 Feb. 20, 1998 Description The HB52E169E1 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed


    Original
    PDF HB52E169E1-B6 16-Mword 72-bit, ADE-203-891 HB52E169E1 64-Mbit HM5264405TT) CDC2509) ALVC16835) CDC2509 BST R68 Nippon capacitors

    Hitachi DSA00164

    Abstract: Nippon capacitors
    Text: HB52E169E1-B6 128 MB Registered SDRAM DIMM 16-Mword x 72-bit, 100 MHz Memory Bus, 1-Bank Module 18 pcs of 16 M × 4 Components PC100SDRAM ADE-203-891A (Z) Rev. 1.0 July 22, 1998 Description The HB52E169E1 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been


    Original
    PDF HB52E169E1-B6 16-Mword 72-bit, PC100SDRAM ADE-203-891A HB52E169E1 64-Mbit HM5264405TT) CDC2509A) Hitachi DSA00164 Nippon capacitors

    Hitachi DSA00276

    Abstract: Nippon capacitors
    Text: HB52E169E12-D 128 MB Registered SDRAM DIMM 16-Mword x 72-bit, 100 MHz Memory Bus, 1-Bank Module 18 pcs of 16 M × 4 Components PC100SDRAM ADE-203-994A (Z) Rev. 1.0 Jul. 22, 1999 Description The HB52E169E12 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed


    Original
    PDF HB52E169E12-D 16-Mword 72-bit, PC100SDRAM ADE-203-994A HB52E169E12 64-Mbit HM5264405DTT) Hitachi DSA00276 Nippon capacitors

    ba 2nd year date sheet

    Abstract: BSW 002 2nd year date sheet ALVC16835 CDC2509A HB52E169E1-B6 PC100SDRAM Hitachi DSA00196 Nippon capacitors
    Text: HB52E169E1-B6 128 MB Registered SDRAM DIMM 16-Mword x 72-bit, 100 MHz Memory Bus, 1-Bank Module 18 pcs of 16 M × 4 Components PC100SDRAM ADE-203-891A (Z) Rev. 1.0 Jul. 22, 1998 Description The HB52E169E1 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed


    Original
    PDF HB52E169E1-B6 16-Mword 72-bit, PC100SDRAM ADE-203-891A HB52E169E1 64-Mbit HM5264405TT) CDC2509A) ba 2nd year date sheet BSW 002 2nd year date sheet ALVC16835 CDC2509A HB52E169E1-B6 PC100SDRAM Hitachi DSA00196 Nippon capacitors

    HB52E169E1-B6D

    Abstract: Hitachi DSA00164 BST R68 Nippon capacitors
    Text: HB52E169E1-D 128 MB Registered SDRAM DIMM 16-Mword x 72-bit, 100 MHz Memory Bus, 1-Bank Module 18 pcs of 16 M × 4 Components PC100SDRAM ADE-203-964 (Z) Preliminary, Rev. 0.0 Nov. 3, 1998 Description The HB52E169E1 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been


    Original
    PDF HB52E169E1-D 16-Mword 72-bit, PC100SDRAM ADE-203-964 HB52E169E1 64-Mbit HM5264405DTT) CDC2509B) HB52E169E1-B6D Hitachi DSA00164 BST R68 Nippon capacitors

    4Mx4 dram simm

    Abstract: TTP32 SIMM72 dram card 60 pin 8KX8 TTP42 4MX16* dram fpm 4Mx8 dram simm 32MByte 334k
    Text: Memory Overview Package Type -Pin Count Supply Voltage Flash_Card ATA-68 3.3; 5.0 ATA flash card, ISA Bus I/F NVM Flash_Card CF-50 3.3; 5.0 Compact flash card 15MByte NVM Flash_Card ATA-68 3.3; 5.0 ATA flash card, ISA Bus I/F HB286015C3 15MByte NVM Flash_Card


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    PDF ATA-68 CF-50 15MByte HB286015C3 HB286030A3 30MByte 4Mx4 dram simm TTP32 SIMM72 dram card 60 pin 8KX8 TTP42 4MX16* dram fpm 4Mx8 dram simm 32MByte 334k

    4Mx1 sram

    Abstract: HM51W17805 16Mx8 dram EDO HB286060A3 HB289016A4 HN29W16814 8mx32 simm 72 pin FP-28 HB289048C4 TFP-32
    Text: Memories Overview Device Name Total Size Family Device Organisation Access Cycle Time Package Time min ns Type - Pin max(ns) Count Supply Voltage Remarks link HB286008A3 8Mbyte NVM Flash_Card - - - ATA-68 3.0-3.6 4.5-5.5 ATA flash card, ISA Bus I/F HB286008C3


    Original
    PDF HB286008A3 ATA-68 HB286008C3 CF-50 HB286015A3 15Mbyte HB286015C3 4Mx1 sram HM51W17805 16Mx8 dram EDO HB286060A3 HB289016A4 HN29W16814 8mx32 simm 72 pin FP-28 HB289048C4 TFP-32

    PC133 registered reference design

    Abstract: 512MB 8Mx32 DDR DRAM HM5225645FBP Hitachi DSA002714
    Text: HM5225645F-B60 HM5225325F-B60 256M LVTTL interface SDRAM 100 MHz 1-Mword x 64-bit × 4-bank/2-Mword × 32-bit × 4-bank PC/100 SDRAM ADE-203-1014C Z Rev. 1.0 Oct. 1, 1999 Description The Hitachi HM5225645F is a 256-Mbit SDRAM organized as 1048576-word × 64-bit × 4-bank. The Hitachi


    Original
    PDF HM5225645F-B60 HM5225325F-B60 64-bit 32-bit PC/100 ADE-203-1014C HM5225645F 256-Mbit 1048576-word PC133 registered reference design 512MB 8Mx32 DDR DRAM HM5225645FBP Hitachi DSA002714

    CDC2509

    Abstract: No abstract text available
    Text: HB52E169E1-B6 128 MB Registered SDRAM DIMM 16-Mword x 72-bit, 100 MHz Memory Bus, 1-Bank Module 18 pcs of 16 M x 4 Components PCSDRAM-0.8 HITACHI ADE-203-891 (Z) Preliminary, Rev. 0.0 Feb. 20, 1998 Description The HB52E169E1 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been


    OCR Scan
    PDF HB52E169E1-B6 16-Mword 72-bit, ADE-203-891 HB52E169E1 64-Mbit HM5264405TT) CDC2509) ALVC16835) CDC2509

    Untitled

    Abstract: No abstract text available
    Text: HB52E169E1-B6 128 MB Registered SDRAM DIMM 16-Mword x 72-bit, 100 MHz Memory Bus, 1-Bank Module 18 pcs of 16 M x 4 Components PC100SDRAM HITACHI ADE-203-891A (Z) Rev. 1.0 July 22, 1998 Description The HB52E169E1 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been


    OCR Scan
    PDF HB52E169E1-B6 16-Mword 72-bit, PC100SDRAM ADE-203-891A HB52E169E1 64-Mbit HM5264405TT) CDC2509A)

    Untitled

    Abstract: No abstract text available
    Text: HB52E169E1-D 128 MB Registered SDRAM DIMM 16-Mword x 72-bit, 100 MHz Memory Bus, 1-Bank Module 18 pcs o f 16 M x 4 Components PC100SDRAM HITACHI ADE-203-964 (Z) Preliminary, Rev. 0.0 Nov. 3, 1998 Description The HB52E169E1 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been


    OCR Scan
    PDF HB52E169E1-D 16-Mword 72-bit, PC100SDRAM ADE-203-964 HB52E169E1 64-Mbit HM5264405DTT) CDC2509B)