HSC1815
Abstract: diode marking H2
Text: HI-SINCERITY Spec. No. : HE6523 Issued Date : 1992.11.25 Revised Date : 2006.07.28 Page No. : 1/4 MICROELECTRONICS CORP. HSC1815 NPN Epitaxial Planar Transistor Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification.
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Original
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HE6523
HSC1815
HSC1815
150oC
200oC
183oC
217oC
260oC
245oC
10sec
diode marking H2
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PDF
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Untitled
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE6523 Issued Date : 1992.11.25 Revised Date : 2004.12.28 Page No. : 1/4 MICROELECTRONICS CORP. HSC1815 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification.
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Original
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HE6523
HSC1815
HSC1815
183oC
217oC
260oC
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PDF
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HSC1815
Abstract: No abstract text available
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6523 Issued Date : 1992.11.25 Revised Date : 2001.06.06 Page No. : 1/3 HSC1815 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification.
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Original
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HE6523
HSC1815
HSC1815
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PDF
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