he6104
Abstract: HE9013 HE9012
Text: HI-SINCERITY Spec. No. : HE6104 Issued Date : 1992.09.09 Revised Date : 2003.08.28 Page No. : 1/4 MICROELECTRONICS CORP. HE9013 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE9013 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.
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HE6104
HE9013
HE9013
625mW)
500mA)
HE9012
he6104
HE9012
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HE9013G
Abstract: HE9013 HE6104 HE9012
Text: HI-SINCERITY Spec. No. : HE6104 Issued Date : 1992.09.09 Revised Date : 2002.03.06 Page No. : 1/4 MICROELECTRONICS CORP. HE9013 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE9013 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.
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HE6104
HE9013
HE9013
625mW)
500mA)
HE9012
HE9013G
HE6104
HE9012
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HE9013
Abstract: HI42C MARK Y1 Transistor
Text: HI-SINCERITY Spec. No. : HE9013 Issued Date : 1996.04.12 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI42C PNP EPITAXIAL PLANAR TRANSISTOR Description The HI42C is designed for use in general purpose amplifier, low speed switching applications.
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HE9013
HI42C
HI42C
O-251
183oC
217oC
260oC
HE9013
MARK Y1 Transistor
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HI42C
Abstract: No abstract text available
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9013-B Issued Date : 1996.04.12 Revised Date : 2000.11.01 Page No. : 1/3 HI42C PNP EPITAXIAL PLANAR TRANSISTOR Description The HI42C is designed for use in general purpose amplifier, low speed switching applications.
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HE9013-B
HI42C
HI42C
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HE6104
Abstract: HE9013 700 H2A HE9012
Text: HI-SINCERITY Spec. No. : HE6104 Issued Date : 1992.09.09 Revised Date : 2004.09.29 Page No. : 1/5 MICROELECTRONICS CORP. HE9013 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE9013 is designed for use in 1W output amplifier of portable radios in class B
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HE6104
HE9013
HE9013
625mW)
500mA)
HE9012
183oC
217oC
260oC
HE6104
700 H2A
HE9012
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XL1225 equivalent
Abstract: 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent
Text: Transistors, SCR, IC CROSS REFERENCE / EQUIVALENT TABLE R Cross Reference Table 1 / 13 INDUSTRY TYPE No. DC COMP. TYPE No. Cross Reference Table 2 / 13 PACKAGE INDUSTRY TYPE No. DC COMP. TYPE No. PACKAGE 2N2955 2N2955 TO-3 2SA952 2SA952 TO-92 2N3055 2N3055
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2N2955
2SA952
2N3055
2SB1426
2N3417
XL1225 equivalent
2N3053 equivalent
BF422 EQUIVALENT
bc238 equivalent
2N6397 equivalent
2N5551 equivalent
2SB772 equivalent
BC109 BC184 BC549
2sd880 equivalent
BT169 equivalent
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BC547 sot package sot-23
Abstract: BC547 sot23 BC557 sot-23 BC557 sot package sot-23 BC556 sot package sot-23 2sa1015 sot-23 2SC945 SOT-23 bc548 sot23 2sb772 TO92 PCR306
Text: DC Components - Cross Reference Industry Type No. DC Type 2N2955 2N2955 TO-3 2N3055 2N3055 TO-3 2SB1426 2SB1426 2SB507 2SB507 TO-220AB 2N3772 2N3772 TO-3 2SB564A 2SB564A 2N3773 2N3773 TO-3 2N3904 2N3904 TO-92 2SB772 2SB772 TO-126 2N3906 2N3906 TO-92 2SB857 2SB857 TO-220AB
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2N2955
2N3055
2SB1426
2SB507
O-220AB
2N3772
BC547 sot package sot-23
BC547 sot23
BC557 sot-23
BC557 sot package sot-23
BC556 sot package sot-23
2sa1015 sot-23
2SC945 SOT-23
bc548 sot23
2sb772 TO92
PCR306
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he6103
Abstract: HE9012 HE9013
Text: HI-SINCERITY Spec. No. : HE6103 Issued Date : 1992.09.09 Revised Date : 2004.09.29 Page No. : 1/5 MICROELECTRONICS CORP. HE9012 PNP EPITAXIAL PLANAR TRANSISTOR Description The HE9012 is designed for use in 1W output amplifier of portable radios in class B
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HE6103
HE9012
HE9012
625mW)
500mA)
HE9013
183oC
217oC
260oC
he6103
HE9013
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he6103
Abstract: HE9012G HE9012 HE9013
Text: HI-SINCERITY Spec. No. : HE6103 Issued Date : 1992.09.09 Revised Date : 2002.02.18 Page No. : 1/4 MICROELECTRONICS CORP. HE9012 PNP EPITAXIAL PLANAR TRANSISTOR Description The HE9012 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.
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HE6103
HE9012
HE9012
625mW)
500mA)
HE9013
he6103
HE9012G
HE9013
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