HM5117400AS
Abstract: 06M6 hitachi V04 Hitachi DSA0088
Text: HB56A441BR Series 4,194,304-Word x 40-Bit High Density Dynamic RAM Module Rev. 1 Mar. 1, 1994 The HB56A441BR is a 4 M x 40 dynamic RAM module, mounted 10 pieces of 16-Mbit DRAM HM5117400AS sealed in SOJ package. An outline of the HB56A441BR is 72-pin single
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HB56A441BR
304-Word
40-Bit
16-Mbit
HM5117400AS)
72-pin
HB56A441BR
HM5117400AS
06M6
hitachi V04
Hitachi DSA0088
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SBS-60
Abstract: HM5117400AS HB56A832 HB56A832BS-7A
Text: HB56A832 Series 8,388,608-word x 32-bit High Density Dynamic RAM Module The HB56A832 is a 8M × 32 dynamic RAM module, mounted 16 pieces of 16Mbit DRAM HM5117400AS sealed in SOJ package. An outline of the HB56A832 is 72-pin single in-line package. Therefore, the HB56A832 makes high
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HB56A832
608-word
32-bit
16Mbit
HM5117400AS)
72-pin
SBS-60
HM5117400AS
HB56A832BS-7A
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hb56d836sbr-7a
Abstract: HB56D836BR-6A HB56D836SBR-6A HB56D836 HM5117400AS HB56D836BR7AC
Text: HB56D836 Series 8,388,608-word x 36-bit High Density Dynamic RAM Module The HB56D836 is a 8 M × 36 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM HM5117400AS sealed in SOJ package and 8 pieces of 4-Mbit DRAM (HM514100BS/CS) sealed in SOJ package. An outline of the
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HB56D836
608-word
36-bit
16-Mbit
HM5117400AS)
HM514100BS/CS)
72-pin
hb56d836sbr-7a
HB56D836BR-6A
HB56D836SBR-6A
HM5117400AS
HB56D836BR7AC
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HB56A432SBR-6A
Abstract: HM5117400AS HB56A432 HB56A432BR-6A
Text: HB56A432 Series 4,194,304-word x 32-bit High Density Dynamic RAM Module The HB56A432 is a 4 M × 32 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM HM5117400AS sealed in SOJ package. An outline of the HB56A432 is 72-pin single in-line package. Therefore, the HB56A432 makes high
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HB56A432
304-word
32-bit
16-Mbit
HM5117400AS)
72-pin
HB56A432SBR-6A
HM5117400AS
HB56A432BR-6A
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HB56D436BR-6A
Abstract: HB56D436SBR-7AC HB56D436 HM5117400AS HB56D436BR-7A HB56D436BR-6AC HB56D436SBR-7A
Text: HB56D436 Series 4,194,304-word x 36-bit High Density Dynamic RAM Module The HB56D436 is a 4 M × 36 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM HM5117400AS sealed in SOJ package and 4 pieces of 4-Mbit DRAM (HM514100BS/CS) sealed in SOJ package. An outline of the
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HB56D436
304-word
36-bit
16-Mbit
HM5117400AS)
HM514100BS/CS)
72-pin
HB56D436BR-6A
HB56D436SBR-7AC
HM5117400AS
HB56D436BR-7A
HB56D436BR-6AC
HB56D436SBR-7A
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Untitled
Abstract: No abstract text available
Text: HM5117400AS7GS 1/2 IL22 * C-MOS 4194304 WORD•8-BIT DYNAMIC RAM — TOP VIEW — 9 1 VDD (+5V) GND 26 10 11 I/O1 2 25 I/O4 I/O2 3 24 I/O3 12 15 16 17 WE IN 4 23 CAS IN 18 19 RAS IN 5 22 OE IN 21 8 6 NC 21 A9 IN 22 23 4 A10 IN 8 19 A8 IN A0 IN 9
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HM5117400AS7GS
A0-A10
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Hitachi DSA007579
Abstract: HM5117400AS HB56A841BR-6A Hitachi DSA00757 Hitachi DSA0075
Text: HB56A841BR Series 8,388,608-Word x 40-Bit High Density Dynamic RAM Module Rev. 1 Mar. 01, 1994 The HB56A841BR is a 8 M x 40 dynamic RAM module, mounted 20 pieces of 16-Mbit DRAM HM5117400AS sealed in SOJ package. An outline of the HB56A841BR is 72-pin single in-line
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HB56A841BR
608-Word
40-Bit
16-Mbit
HM5117400AS)
72-pin
Hitachi DSA007579
HM5117400AS
HB56A841BR-6A
Hitachi DSA00757
Hitachi DSA0075
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HM5117400AS7GS
Abstract: HM5117400AS7
Text: HM5117400AS7GS 1/2 IL22 * C-MOS 4194304 WORD•8-BIT DYNAMIC RAM — TOP VIEW — 9 1 VDD (+5V) GND 26 10 11 I/O1 2 25 I/O4 12 15 I/O2 3 24 I/O3 16 17 WE IN 4 23 CAS IN 18 19 RAS IN 5 22 OE IN 21 8 6 NC 21 A9 IN 22 23 4 A10 IN 8 19 A8 IN A0 IN 9
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HM5117400AS7GS
A0-A10
HM5117400AS7GS
HM5117400AS7
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74ABT16244ADGG
Abstract: HB56D473EJ HM5117400AS Hitachi DSA00514
Text: ADE-203-250 Z HB56D473EJ Series 4,194,304-word x 72-bit High Density Dynamic RAM Module Preliminary Rev. 0 Apr. 20, 1994 The HB56D473EJ belongs to 8 byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution
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ADE-203-250
HB56D473EJ
304-word
72-bit
16-Mbit
HM5117400AS)
HM514100BS/CS)
16-bit
74ABT16244ADGG
HM5117400AS
Hitachi DSA00514
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HM5117400AS
Abstract: HM5117400A Hitachi DSA00514
Text: ADE-203-180C Z HM5117400A/AL Series 4,194,304-word x 4-bit Dynamic Random Access Memory Rev. 3.0 Nov. 22, 1994 The Hitachi HM5117400A/AL is a CMOS dynamic RAM organized 4,194,304 word × 4 bit. It employs the most advanced CMOS technology for high performance and low power. The
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ADE-203-180C
HM5117400A/AL
304-word
mW/550
mW/495
HM5117400B/BL
HM5117400BS/BLS
CP-26/24DB)
HM5117400AS
HM5117400A
Hitachi DSA00514
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Untitled
Abstract: No abstract text available
Text: HB56D836IB Series 8,388,608-W ord x 36-Bit High Density Dynamic RAM Module HITACHI The HB56D836IB is a 8M x 36 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM HM5117400AS sealed in SOJ package and 8 pieces of 4-Mbit DRAM (HM514100BS) sealed in SOJ package. An outline of the HB56D836IB is
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HB56D836IB
36-Bit
16-Mbit
HM5117400AS)
HM514100BS)
72-pin
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D74HA3.7A-C
Abstract: E74HA3.7A-C MS163-2 A52HA3.7A-C
Text: HB56D436BT/SBT-6AC/7AC/8AC Preliminary 4,194.304-Word x 36-Bit High Density Dynamic RAM Module HITACHI The HB56D436 is a 4 M x 36 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM HM5117400AS sealed in SOJ package and 4 pieces of 4-M bit DRAM (HM514100CS) sealed in
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HB56D436BT/SBT-6AC/7AC/8AC
304-Word
36-Bit
HB56D436
16-Mbit
HM5117400AS)
HM514100CS)
72-pin
D74HA3.7A-C
E74HA3.7A-C
MS163-2
A52HA3.7A-C
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HB56D836SBT-AC
Abstract: power bank 5v 4Mx1 514400C m514400c 473e HM514400BS BLS B56A HM5116400ATS 5117800B
Text: 72-pin DRAM SIPs *32 »36 Org. Part Number Speeds ns Voltage Refresh Cycle Refresh Period Refresh Modes Power Version Number of Banks Component Base 1Mx32 HB56 A132BV/BU-B/BL HB56A132SBV-B/BL HB56A132BV/BU-C/CL HB56A132SBV-C/CL 60, 70, 80 5V 1K 16 ms 128 ms
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72-pin
A132BV/BU-B/BL
HB56A132SBV-B/BL
HB56A132BV/BU-C/CL
HB56A132SBV-C/CL
HB56A132BW-B/BL
HB56A132SBW-B/BL
HB56A132BW-C/CL
HB56A132SBW-C/CL
HB56A232BT-B/BL
HB56D836SBT-AC
power bank 5v
4Mx1
514400C
m514400c
473e
HM514400BS BLS
B56A
HM5116400ATS
5117800B
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Untitled
Abstract: No abstract text available
Text: M UT" >5" 5 HB56A441BR Series 4,194,304-Word x 40-Bit High Density Dynamic RAM Module Rev. 1 Mar. 1,1994 HITACHI The HB56A441BR is a 4 M x 40 dynamic RAM m odule, m ounted 10 pieces of 16-M bit DRAM H M 5117400A S sealed in SOJ package. An outline of the HB56A441BR is 72-pin single in
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HB56A441BR
304-Word
40-Bit
117400A
72-pin
HB56A441BR-6A
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RAS 05
Abstract: HB56D436SBR-7AC HB56D436BR-7A HBS6D436SBR-8A hb56d436br-6ac
Text: HB56D436 Series 4,194,304-word x 36-bit High D ensity D ynam ic R AM Module T h e H B 56D 436 is a 4 M x 36 d y n am ic RA M m o d u le, m ounted 8 p iece s o f 16 -M b it D R A M H M 5117400A S sealed in SO J package and 4 p ie c e s o f 4 -M b it D R A M (H M 5 1 4 1 0 0 B S /C S )
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HB56D436
304-word
36-bit
117400A
HB56D436BR-6A
HB56D436BR-7
RAS 05
HB56D436SBR-7AC
HB56D436BR-7A
HBS6D436SBR-8A
hb56d436br-6ac
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Untitled
Abstract: No abstract text available
Text: HB56A432 Series 4,194,304-word x 32-bit High Density Dynamic RAM Module T h e H B 5 6 A 4 3 2 is a 4 M x 32 d y n a m ic R A M m o d u le , m o u n te d 8 p ie c e s o f 1 6 -M b it D R A M H M 5 1 1 7 4 0 0 A S s e a le d in S O J p a c k a g e . A n outlin e o f the H B 56A 432 is 72-pin single in-line
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HB56A432
304-word
32-bit
72-pin
HB56A432BR-6A
HB56A432BR-7A
HB56A432BR-8A
HB56A432SBR-6A
HB56A432BR-XX
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m51174
Abstract: m5117400 M511740
Text: ADE-203-180C Z H M 5 1 1 7 4 0 0 A / A L Series 4,194,304-word x 4-bit Dynamic Random Access Memory Rev. 3.0 Nov. 22, 1994 HITACHI T he H ita c h i H M 5 1 1 7 4 0 0 A /A L is a C M O S dynamic RAM organized 4,194,304 word x 4 bit. It employs the most advanced CMOS technology
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ADE-203-180C
304-word
117400A
HM5117400AS/ALS-6
HM5117400AS/ALS-7
M5117400AS/ALS-8
M5117400ATS/ALTS-6
M5117400ATS/ALTS-7
M5117400ATS/ALTS-8
300-mil
m51174
m5117400
M511740
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HB56A841BR-6A
Abstract: D8553
Text: HB56A841BR Series 8,388,608-Word x 40-Btt High Density Dynamic RAM Module HITACHI The HB56A841BR is a 8 M x 40 dynamic RAM m odule, m ounted 20 pieces of 16-M bit DRAM H M 5117400A S sealed in SOJ package. An outline of the HB56A841BR is 72-pin single in
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HB56A841BR
608-Word
40-Btt
117400A
72-pin
HB56A841BR-6A
D8553
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