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Toshiba America Electronic Components HN2D01FTE85LF DIODE ARRAY GP 80V 80MA SC74
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HN2D01FTE85LF	Cut Tape	7,211		1	1 $0.46 10 $0.281 100 $0.46 1000 $0.11891 10000 $0.11891	Buy Now
	HN2D01FTE85LF	Digi-Reel	7,211		1	1 $0.46 10 $0.281 100 $0.46 1000 $0.11891 10000 $0.11891	Buy Now
	HN2D01FTE85LF	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.10051	Buy Now
Mouser Electronics	HN2D01FTE85LF		9,334			1 $0.33 10 $0.224 100 $0.151 1000 $0.105 10000 $0.077	Buy Now
Toshiba America Electronic Components HN2D01JE(TE85L,F) DIODE ARRAY GP 80V 100MA ESV
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HN2D01JE(TE85L,F)	Digi-Reel	492		1	1 $0.42 10 $0.255 100 $0.42 1000 $0.10713 10000 $0.09598	Buy Now
	HN2D01JE(TE85L,F)	Cut Tape	492		1	1 $0.42 10 $0.255 100 $0.42 1000 $0.10713 10000 $0.09598	Buy Now
	HN2D01JE(TE85L,F)	Reel			4,000	1 - 10 - 100 - 1000 - 10000 $0.07869	Buy Now
Mouser Electronics	HN2D01JE(TE85L,F)		4,006			1 $0.35 10 $0.226 100 $0.112 1000 $0.086 10000 $0.064	Buy Now
Verical	HN2D01JE(TE85L,F)		3,075		236	1 - 10 - 100 - 1000 $0.1184 10000 $0.1184	Buy Now
Chip1Stop	HN2D01JE(TE85L,F)	Cut Tape	3,075			1 - 10 $0.401 100 $0.154 1000 $0.103 10000 $0.0924	Buy Now
Toshiba America Electronic Components HN2D01FU(TE85L,F) DIODE ARRAY GP 80V 80MA US6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HN2D01FU(TE85L,F)	Cut Tape			1	1 $0.51 10 $0.51 100 $0.51 1000 $0.51 10000 $0.51	Buy Now
Quest Components	HN2D01FU(TE85L,F)		2,276			1 $0.815 10 $0.815 100 $0.815 1000 $0.326 10000 $0.326	Buy Now
EBV Elektronik	HN2D01FU(TE85L,F)			13 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components HN2D01FU,LF Diodes - General Purpose, Power, Switching
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	HN2D01FU,LF		2,068			1 $0.37 10 $0.282 100 $0.17 1000 $0.111 10000 $0.083	Buy Now
Toshiba America Electronic Components HN2D01F(TE85L,F) Diode Switching 85V 0.08A 6-Pin SM T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	HN2D01F(TE85L,F)		3,061		93	1 - 10 - 100 $0.3363 1000 $0.1425 10000 $0.1205	Buy Now
Chip1Stop	HN2D01F(TE85L,F)	Cut Tape	3,061			1 - 10 $0.441 100 $0.17 1000 $0.114 10000 $0.0964	Buy Now

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HN2D01 Datasheets (14)

Part	Manufacturer	Description	Datasheet Type	PDF
HN2D01F	Toshiba	Diode, Ultra High Speed Switching Application	Original	PDF
HN2D01F	Toshiba	DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)	Scan	PDF
HN2D01F	Toshiba	DIODE	Scan	PDF
HN2D01FTE85LF	Toshiba	Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SW 80V 80MA SM6	Original	PDF
HN2D01FU	Toshiba	HN2D01 - DIODE 0.08 A, 3 ELEMENT, SILICON, SIGNAL DIODE, 1-2T1C, 6 PIN, Signal Diode	Original	PDF
HN2D01FU	Toshiba	Diode, Ultra High Speed Switching Application	Original	PDF
HN2D01FU	Toshiba	Japanese - Diodes	Original	PDF
HN2D01FU	Toshiba	Diodes	Original	PDF
HN2D01FU	Unknown	The Diode Data Book with Package Outlines 1993	Scan	PDF
HN2D01FU	Toshiba	DIODE	Scan	PDF
HN2D01FU	Toshiba	Ultra High Speed Silicon Epitaxial Planar Type Diode	Scan	PDF
HN2D01FU(TE85L,F)	Toshiba	Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V US6	Original	PDF
HN2D01JE	Toshiba	Diode Silicon Epitaxial Planar Type	Original	PDF
HN2D01JE(TE85L,F)	Toshiba	Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SW 80V 100MA ESV	Original	PDF

HN2D01 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
HN2D01F Abstract: No abstract text available Text: HN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01F Ultra High Speed Switching Application Unit in mm z HN2D01F is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance	Original	PDF	HN2D01F HN2D01F
HN2D01F Abstract: No abstract text available Text: HN2D01F 東芝ダイオードシリコンエピタキシャルプレーナ形ダイオード HN2D01F ○ 超高速スイッチング用 z z z z 単位: mm 独立した 3 個のダイオードを内蔵順方向特性が良い。 : VF 3 = 0.98V (標準)	Original	PDF	HN2D01F 100mA HN2D01F
HN2D01FU Abstract: No abstract text available Text: HN2D01FU 東芝ダイオードシリコンエピタキシャルプレーナ形ダイオード HN2D01FU ○ 超高速スイッチング用 z z z z 単位: mm ウルトラスーパーミニ 6 端子パッケージに 3 素子を内臓しています。順方向特性が良い。	Original	PDF	HN2D01FU 100mA HN2D01FU
Untitled Abstract: No abstract text available Text: HN2D01JE TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01JE Ultra High Speed Switching Application Unit: mm HN2D01JE is composed of 2 independent diodes. Low forward voltage : VF 3 = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance	Original	PDF	HN2D01JE HN2D01JE
HN2D01F Abstract: No abstract text available Text: HN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01F Ultra High Speed Switching Application Unit in mm l HN2D01F is composed of 3 independent diodes. l Low forward voltage : VF 3 = 0.98V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance	Original	PDF	HN2D01F HN2D01F
HN2D01FU Abstract: No abstract text available Text: HN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Unit in mm Ultra High Speed Switching Application l HN2D01FU is composed of 3 independent diodes. l Low forward voltage : VF 3 = 0.98V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.)	Original	PDF	HN2D01FU HN2D01FU 100mA
HN2D01F Abstract: No abstract text available Text: HN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01F Ultra High Speed Switching Application Unit in mm HN2D01F is composed of 3 independent diodes. Low forward voltage : VF 3 = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance	Original	PDF	HN2D01F HN2D01F
HN2D01JE Abstract: No abstract text available Text: HN2D01JE 東芝ダイオードシリコンエピタキシャルプレーナ形ダイオード HN2D01JE ○ 超高速スイッチング用単位: mm z エクストリームスーパーミニ 5 端子パッケージに 2 素子を内蔵しています。	Original	PDF	HN2D01JE 100mA HN2D01JE
HN2D01JE Abstract: No abstract text available Text: HN2D01JE TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01JE Ultra High Speed Switching Application Unit: mm The HN2D01JE is composed of 2 independent diodes. Low forward voltage : VF 3 = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance	Original	PDF	HN2D01JE HN2D01JE
HN2D01JE Abstract: No abstract text available Text: HN2D01JE TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01JE Ultra High Speed Switching Application Unit: mm z The HN2D01JE is composed of 2 independent diodes. z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)	Original	PDF	HN2D01JE HN2D01JE
Untitled Abstract: No abstract text available Text: HN2D01JE TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01JE Ultra High Speed Switching Application Unit: mm z The HN2D01JE is composed of 2 independent diodes. z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)	Original	PDF	HN2D01JE HN2D01JE
Untitled Abstract: No abstract text available Text: HN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Unit: mm Ultra High Speed Switching Application HN2D01FU is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance	Original	PDF	HN2D01FU HN2D01FU
Untitled Abstract: No abstract text available Text: HN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Unit in mm Ultra High Speed Switching Application HN2D01FU is composed of 3 independent diodes. Low forward voltage : VF 3 = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance	Original	PDF	HN2D01FU HN2D01FU 100mA
HN2D01FU Abstract: No abstract text available Text: HN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Unit in mm Ultra High Speed Switching Application HN2D01FU is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance	Original	PDF	HN2D01FU HN2D01FU

Untitled Abstract: No abstract text available Text: SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. + 0.2 2 .8 -0 3 + 0.2 . HN2D01F is composed of 3 independent diodes, . T.ow Forward Voltage 1.6 - 0.1 : Vp=0.98V Typ. D6 . Fast Reverse Recovery Time : trr= 1.6ns (Typ.) . Small. Total Capacitance	OCR Scan	PDF	HN2D01F HN2D01F
Untitled Abstract: No abstract text available Text: SILICON EPITAXIAL PLANAR TY P E HN2D01FU U LTRA HIGH SPEED SW IT C H IN G A PPLIC A TIO N . • • • • HN2D01FU is composed of 3 Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance PIN A S S IG N M E N T TOP V IEW 6 5 1rQ i X 1 independent diodes.	OCR Scan	PDF	HN2D01FU HN2D01FU 100mA if--H05 01/iF
Untitled Abstract: No abstract text available Text: TOSHIBA HN2D01 FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 2 D 0 1 FU ULTRA HIGH SPEED SWITCHING APPLICATION. U n it in mm • H N 2 D 0 1 FU is composed of 3 independent diodes. • Low Forw ard Voltage • Fa st Reverse Recovery Tim e : tr r = 1.6ns Typ.	OCR Scan	PDF	HN2D01 01//F
HN2D01FU Abstract: HN2D01 1q31 Text: TOSHIBA HN2D01 FU T O S H IB A D IO D E SILICO N EPITA X IA L PLA N A R TYPE H N 2 D 0 1 FU ULTRA H IG H SPEED S W IT C H IN G A P P L IC A T IO N . U nit in mm • HN2D01FU is composed of 3 independent diodes. • Low Forward Voltage • Fast Reverse Recovery Time : trr= 1.6ns Typ.	OCR Scan	PDF	HN2D01 HN2D01FU HN2D01FU 1q31
Untitled Abstract: No abstract text available Text: TOSHIBA HN2D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D01F ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm • HN2D01F is composed of 3 independent diodes. • Low Forward Voltage • Fast Reverse Recovery Time : trr= 1.6ns Typ. • Small Total Capacitance	OCR Scan	PDF	HN2D01F HN2D01F 961001EAA2'
HN2D01F Abstract: lu2b Text: TOSHIBA HN2D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D01F ULTRA HIGH SPEED SWITCHING APPLICATION. • +0.2 2.8 - 0.3 +0.2 1.6-0.1 H N 2D01F is composed of 3 independent diodes. • Low Forward Voltage • F a st Reverse Recovery Time : trr = 1.6ns Typ.	OCR Scan	PDF	HN2D01F HN2D01F 961001EAA2' lu2b
Untitled Abstract: No abstract text available Text: TOSHIBA HN2D01 FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 2 D 0 1 FU ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm • HN2D01FU is composed of 3 independent diodes. • Low Forward Voltage • Fast Reverse Recovery Time : trr= 1.6ns Typ. •	OCR Scan	PDF	HN2D01 HN2D01FU
diode Z47 Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode Text: Diodes Signal Diode for General Purpose R atino V r V lo im A ) Switching Diode Schottky Barrier Diode Zener Diode use S-M IN I (SOT-23MOD) BO 80 — — _ — HN2D01FU _ 80 80 _ — — — HN2D02FU BO 80 80 — ssc SS M use 1SS362 1S S368 USM — 1S S 352	OCR Scan	PDF	HN2D01FU HN2D02FU OT-23MOD) 02CZ5 diode Z47 z43 diode Z5.6 Z3.3 S360 DIODE diode Z27 S368 diode zener z6 1s diode
Untitled Abstract: No abstract text available Text: TOSHIBA HN2D01 FU T O S H IB A D IO D E SILICO N EPITA X IA L PLA N A R TYPE H N 2 D 0 1 FU ULTRA H IG H SPEED S W IT C H IN G A P P L IC A T IO N . Unit in mm • HN2D01FU is composed of 3 independent diodes. • Low Forward Voltage • F ast Reverse Recovery Time : tr r = 1.6ns Typ.	OCR Scan	PDF	HN2D01 HN2D01FU
1213-00N Abstract: HN2D01F toshiba diode 3D Text: TOSHIBA HN2D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D01F Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • HN2D01F is composed of 3 independent diodes. Low Forward Voltage : Vp 3 = 0.98V (Typ.) Fast Reverse Recovery Time : trr= 1.6ns (Typ.)	OCR Scan	PDF	HN2D01F HN2D01F 961001EAA2' 1213-00N toshiba diode 3D

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HN2D01 Price and Stock

Toshiba America Electronic Components HN2D01FTE85LF

Toshiba America Electronic Components HN2D01JE(TE85L,F)

Toshiba America Electronic Components HN2D01FU(TE85L,F)

Toshiba America Electronic Components HN2D01FU,LF

Toshiba America Electronic Components HN2D01F(TE85L,F)

HN2D01 Datasheets (14)

HN2D01 Datasheets Context Search

HN2D01F

HN2D01F

HN2D01FU

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HN2D01F

HN2D01FU

HN2D01F

HN2D01JE

HN2D01JE

HN2D01JE

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HN2D01FU

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HN2D01FU

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HN2D01F

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diode Z47

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1213-00N