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    HN3C17FU Search Results

    HN3C17FU Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HN3C17FU Toshiba Silicon NPN epitaxial planar type transistor for VHF-UHF band low noise amplifier applications Scan PDF
    HN3C17FU Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF

    HN3C17FU Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : N F=1.3dB (f=2GHz) • High Gain : |S2l e|2 = 9-0dB (f=2GHz)


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    HN3C17FU 16GHz PDF

    HN3C17FU

    Abstract: No abstract text available
    Text: TOSHIBA HN3C17FU TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU V H F -U H F LO W NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure : NF = 1.3dB (f=2GHz) • High Gain : |S2l e|2= 9.0dB (f=2GHz) M A X IM U M RATINGS (Ta = 25°C)


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    HN3C17FU HN3C17 16GHz HN3C17FU PDF

    Untitled

    Abstract: No abstract text available
    Text: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : NF=1.3dB (f=2GHz) • High Gain : |S2l e|2 = 9-0dB (f=2GHz)


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    HN3C17FU 16GHz PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE HN3C17FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm VHF-UHF LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure : NF=1.3dB (f=2GHz) • High Gain : |S2 l e|2= 9.0dB (f=2GHz) 2.1 +0.1 MAXIMUM RATINGS (Ta = 25°C)


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    HN3C17FU 16GHz S21el2 PDF

    HN3C17FU

    Abstract: No abstract text available
    Text: TO SH IBA TENTATIVE HN3C17FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU VHF-UHF LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure : NF = 1.3dB (f=2GHz) • High Gain : |S2l e|2= 9.0dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C)


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    HN3C17FU N3C17 16GHz HN3C17FU PDF

    Silicon NPN Epitaxial Planar Type

    Abstract: No abstract text available
    Text: TOSHIBA HN3C17FU TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU V H F -U H F LO W NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure : NF = 1.3dB (f=2GHz) • High Gain : |S2l e|2= 9.0dB (f=2GHz) M A X IM U M RATINGS (Ta = 25°C)


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    HN3C17FU HN3C17 16GHz Silicon NPN Epitaxial Planar Type PDF