sot834
Abstract: HSOP16F
Text: PDF: 2003 Oct 22 Philips Semiconductors Package outline HSOP16F: plastic, heatsink small outline package; 16 leads flat SOT834-1 D A E E2 c y X HE v M A D1 e3 (2x) D2 w M bp2 16 12 A2 E1 pin 1 index Q1 detail X 1 11 w M Z bp1 (5×) e1 (2×) e (6×) e2 (4×)
|
Original
|
HSOP16F:
OT834-1
sot834
HSOP16F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Package outline HSOP16F: plastic, heatsink small outline package; 16 leads flat SOT1211-1 D X E c D3 E3 B A HE y v A D1 D2 e1 b1(2x) w 16 B 15 E2 A E1 A2 Q1 pin 1 index A1 1 detail X 14 b(14x) e2 e w B (12x) 10 mm scale Dimensions (mm are the original dimensions)
|
Original
|
HSOP16F:
OT1211-1
sot1211-1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PC board footprint NXP Semiconductors Footprint for reflow soldering of HSOP16F package SOT834-1 sr +0.075 mm around copper 1.45 4 x 0.60 (10 ×) 11.78 8.86 6.82 4.78 2.74 1.20 (2 ×) 0.45 5.90 7.62 16.40 sp −0.025 mm around copper 11.50 solder lands
|
Original
|
HSOP16F
OT834-1
sot834-1
OT834-1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BLM7G1822S-20PB; BLM7G1822S-20PBG LDMOS 2-stage power MMIC Rev. 1 — 19 December 2013 Objective data sheet 1. Product profile 1.1 General description The BLM7G1822S-20PB and BLM7G1822S-20PBG are dual path, 2-stage power MMICs using NXP’s state of the art GEN7 LDMOS technology. These multiband devices are
|
Original
|
BLM7G1822S-20PB;
BLM7G1822S-20PBG
BLM7G1822S-20PB
BLM7G1822S-20PBG
S-20PBG
|
PDF
|
mmic e3
Abstract: 4350B BLM6G22-30 BLM6G22-30G HSOP16
Text: BLM6G22-30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC Rev. 01 — 3 March 2008 Objective data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount SOT822-1 or flat lead
|
Original
|
BLM6G22-30;
BLM6G22-30G
OT822-1)
OT834-1)
BLM6G22-30
BLM6G22-30G
mmic e3
4350B
HSOP16
|
PDF
|
BLM7G1822S
Abstract: No abstract text available
Text: BLM7G1822S-20PB; BLM7G1822S-20PBG LDMOS 2-stage power MMIC Rev. 2 — 26 June 2014 Objective data sheet 1. Product profile 1.1 General description The BLM7G1822S-20PB G is a dual section, 2-stage power MMIC using NXP’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as general
|
Original
|
BLM7G1822S-20PB;
BLM7G1822S-20PBG
BLM7G1822S-20PB
S-20PBG
BLM7G1822S
|
PDF
|
BLM7G1822S-40
Abstract: BLM7G1822S
Text: BLM7G1822S-40PB; BLM7G1822S-40PBG LDMOS 2-stage power MMIC Rev. 2 — 24 March 2014 Product data sheet 1. Product profile 1.1 General description The BLM7G1822S-40PB G is a dual section, 2-stage power MMIC using NXP’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as general
|
Original
|
BLM7G1822S-40PB;
BLM7G1822S-40PBG
BLM7G1822S-40PB
S-40PBG
BLM7G1822S-40
BLM7G1822S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BLM6G22-30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC Rev. 4 — 7 March 2011 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount SOT822-1 or flat lead
|
Original
|
BLM6G22-30;
BLM6G22-30G
OT822-1)
OT834-1)
BLM6G22-30
|
PDF
|
BLM7G1822S-40
Abstract: No abstract text available
Text: BLM7G1822S-40PB; BLM7G1822S-40PBG LDMOS 2-stage power MMIC Rev. 1 — 9 October 2013 Objective data sheet 1. Product profile 1.1 General description The BLM7G1822S-40PB G is a dual path, 2-stage power MMIC using NXP’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as general
|
Original
|
BLM7G1822S-40PB;
BLM7G1822S-40PBG
BLM7G1822S-40PB
S-40PBG
BLM7G1822S-40
|
PDF
|
BLMG1
Abstract: mmic e3 4350B HSOP16 BLM6G10-30G
Text: BLM6G10-30; BLM6G10-30G W-CDMA 860 MHz - 960 MHz power MMIC Rev. 2 — 1 March 2011 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 860 MHz to 960 MHz. Available in Gull Wing for surface mount SOT822-1 or flat lead
|
Original
|
BLM6G10-30;
BLM6G10-30G
OT822-1)
OT834-1)
BLM6G10-30
BLMG1
mmic e3
4350B
HSOP16
BLM6G10-30G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AN11183 Mounting and soldering of RF transistors in over-molded plastic packages Rev. 1 — 6 November 2012 Application note Document information Info Content Keywords Over-Molded Plastic OMP packages, heat sink, footprint, surface mount, reflow soldering, component handling, exposed heat spreader, SMDP,
|
Original
|
AN11183
|
PDF
|
mmic e3
Abstract: 4350B BLM6G22-30 BLM6G22-30G HSOP16 sot8221po GP328 atc 174
Text: BLM6G22-30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC Rev. 4 — 7 March 2011 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount SOT822-1 or flat lead
|
Original
|
BLM6G22-30;
BLM6G22-30G
OT822-1)
OT834-1)
BLM6G22-30
mmic e3
4350B
BLM6G22-30G
HSOP16
sot8221po
GP328
atc 174
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BLM6G10-30; BLM6G10-30G W-CDMA 860 MHz - 960 MHz power MMIC Rev. 2 — 1 March 2011 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 860 MHz to 960 MHz. Available in Gull Wing for surface mount SOT822-1 or flat lead
|
Original
|
BLM6G10-30;
BLM6G10-30G
OT822-1)
OT834-1)
BLM6G10-30
|
PDF
|
mmic e3
Abstract: 4350B BLM6G22-30 BLM6G22-30G HSOP16 GP328
Text: BLM6G22-30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC Rev. 03 — 21 November 2008 Preliminary data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount SOT822-1 or flat lead
|
Original
|
BLM6G22-30;
BLM6G22-30G
OT822-1)
OT834-1)
BLM6G22-30
BLM6G22-30G
mmic e3
4350B
HSOP16
GP328
|
PDF
|
|
|
transistor d400 e 1b
Abstract: SOT1211-1 J1889 j2976 nxp power microwave transistor C403 3RD IF
Text: BLM7G22S-60PB; BLM7G22S-60PBG LDMOS 2-stage power MMIC Rev. 1 — 11 December 2012 Product data sheet 1. Product profile 1.1 General description The BLM7G22S-60PB G is a dual path, 2-stage power MMIC using NXP’s state of the art GEN7 LDMOS technology. This device is perfectly suited as general purpose driver in the
|
Original
|
BLM7G22S-60PB;
BLM7G22S-60PBG
BLM7G22S-60PB
7G22S-60PBG
transistor d400 e 1b
SOT1211-1
J1889
j2976
nxp power microwave transistor
C403 3RD IF
|
PDF
|