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    TH 20669

    Abstract: TA 8644
    Text: HWF1681YC HEXAWAVE High Power GaAs FET September 1998 Rev. B Features Outline Drawing High Output Power P I <ib = 3 4 . 5dB m typ. @ 2.4G H z High Gain Unit : £ G l = 15dB (typ.)@ 2.4G H z Thickness: 53 \ High Efficiency A ll B ond Pads: gn 5 1 0 0 x 100


    OCR Scan     		HWF1681YC Dissipatio175 TH 20669 TA 8644 PDF