HWL26YC Search Results

HWL26YC Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
HWL26YC		Hexawave	1.7 W L-band power FET via hole chip		Original	PDF

HWL26YC Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: HWL26YC 123456789ABC7DEF7 47 9 B7 7 Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • 18 dB Typical Gain at 2.4 GHz • 5V to 10V Operation 376 451.5 1 Description 226 The HWL26YC is a medium power GaAs FET	Original	PDF	HWL26YC 123456789ABC7DEF7 HWL26YC
IN 5406 Abstract: F24G 1S121 M 16100 39 2 1019 Text: Jft, HSXAWAVS Hexawave, Inc. C-Band Non-Via Hole Chip Description The following parts are presently offered in chip form. They are fabricated by Hexawave 0.7^m gate length, nchannel MESFET process, non -via hole device, designed for various C-Band applications.	OCR Scan	PDF	HWC27NC HWC30NC HWC34NC chip67 IN 5406 F24G 1S121 M 16100 39 2 1019

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: HWL26YC 123456789ABC7DEF7 47 9 B7 7 Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • 18 dB Typical Gain at 2.4 GHz • 5V to 10V Operation 376 451.5 1 Description 226 The HWL26YC is a medium power GaAs FET

Original

PDF

HWL26YC 123456789ABC7DEF7 HWL26YC

IN 5406

Abstract: F24G 1S121 M 16100 39 2 1019
Text: Jft, HSXAWAVS Hexawave, Inc. C-Band Non-Via Hole Chip Description The following parts are presently offered in chip form. They are fabricated by Hexawave 0.7^m gate length, nchannel MESFET process, non -via hole device, designed for various C-Band applications.

OCR Scan

PDF

HWC27NC HWC30NC HWC34NC chip67 IN 5406 F24G 1S121 M 16100 39 2 1019