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    HY51161 Price and Stock

    SK Hynix Inc HY5116100BT-60

    16M X 1 FAST PAGE DRAM, 60 NS, PDSO24
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HY5116100BT-60 23,975
    • 1 $6
    • 10 $6
    • 100 $6
    • 1000 $2.2
    • 10000 $2.1
    		Buy Now

    SK Hynix Inc HY5116100JC-60

    FAST PAGE DRAM, 16MX1, 60NS, CMOS, PDSO24
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HY5116100JC-60 16
    • 1 $12.5
    • 10 $9.375
    • 100 $9.375
    • 1000 $9.375
    • 10000 $9.375
    		Buy Now

    HY51161 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY5116100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    HY5116160 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    HY5116160BJC Hynix Semiconductor 1Mx16, Fast Page mode Original PDF
    HY5116160C Hyundai Fast Page mode DRAM 1Mx16 Original PDF

    HY51161 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HY5118160

    Abstract: HY5118160BTC HY5118160B
    Text: HY5118160B,HY5116160B 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    Original     		PDF HY5118160B HY5116160B 1Mx16, 16-bit 1Mx16 HY5118160 HY5118160BTC

    HY5118164B

    Abstract: HY5118164BJC HY5116164B
    Text: HY5118164B,HY5116164B 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    Original     		PDF HY5118164B HY5116164B 1Mx16, 16-bit 1Mx16 HY5118164BJC HY5116164B

    HY5116100B

    Abstract: No abstract text available
    Text: HY5116100B Series -HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100B is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. HY5116100B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116100B TheHY5116100B 1AD41-00-MAY9S 4b750Ã 0GG435b HY5116100BJ HY5116100BSLJ

    Untitled

    Abstract: No abstract text available
    Text: HYM581600 M-Series •H Y U N D A I 16M X 8-bit CMOS ORAM MODULE DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22/xF decoupling capacitor Is mounted for


    OCR Scan     		PDF HYM581600 HY5116100 22/xF HYM581600M/LM/TM/LTM 891MAX HYM581600TM/LTM 25IMAX. 1BD01-01-FEB94

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI SEMICONDUCTOR HYM581600 Series 16M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22p.F decoupling capacitor is mounted for


    OCR Scan     		PDF HYM581600 HY5116100 HYM581600M/LM/TM/LTM HYM581600TM/LTM 1BD01-00-MAY93 HYM581600M HYM581600LM HYM581600TM

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 1 6 1 O O A •HYUNDAI S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The HY51161 OOA is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51161 OOA utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51161 HY5116100Ato 9-10-MAY94 HY5116100A HY5116100AJ HY5116100ASU HY5116100AT HY51161OOASLT HY5116100AR

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HYM564200 X-Series 2M X 64-bit CMOS ORAM MODULE D E S C R IP T IO N The HYM564200 is a 2M x 64-bit Fast page m ode CMOS DRAM m odule consisting o f eight HY5116160 in 42/42 pin SOJ, tw o 16-bit and one 8-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board.


    OCR Scan     		PDF HYM564200 64-bit HY5116160 16-bit HYM564200XG/SLXG A0-A11 RAS0-RA53) DQ0-DQ63)

    rau2

    Abstract: 1A011
    Text: HY5116160 Series -HYUNDAI 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116160 16-bit 16-bit. Y5116160 1AD11-10-MAY95 HY5116160JC HY5116160SLJC rau2 1A011

    HY5116100

    Abstract: No abstract text available
    Text: HYUNDAI H Y 5 1 1 6 1 0 0 S e r ie s SEMICONDUCTOR 16M X 1-blt CMOS DRAM DESCRIPTION The HY5116100 is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5116100 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5116100 1AD01-10-APR93 HY5116100JC HY5116100LJC HY5116100TC HY5116100LTC HY5116100RC

    Untitled

    Abstract: No abstract text available
    Text: »fl Y U ND ft I - • HYM5361600A M-Series 16Mx36 bit FP DRAM MODULE based on 16Mx1 DRAM, with Parity, 5V, 4K-Refresh GENERAL DESCRIPTION The HYM 5361600A M-Series is a 16Mx36-bit Fast Page mode CMOS DRAM module consisting of thirty-six HY5116100B in 24/26 pin SOJ or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.1 ¡iF and 0.01 (tF


    OCR Scan     		PDF HYM5361600A 16Mx36 16Mx1 361600A 16Mx36-bit HY5116100B HYM5361600AM/ATM HYM5361600AMG/ATMG 72-Pin 256ms

    HY5118160

    Abstract: HY5118160C
    Text: » M Y U H D A I * HY5118160C,HY5116160C > 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    OCR Scan     		PDF HY5118160C HY5116160C 1Mx16, 16-bit A0-A11) DQ0-DQ15) HY5118160

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI H Y 5 1 1 6 1 0 0 A S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100Ais the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5116100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116100Ais HY5116100A HY5116100Ato 1AD19 HY5116100AJ HY5116100ASU HY5116100AT HY5116100ASLT HY5116100AR

    A8303

    Abstract: HY5118164BSLJC HY5118164B 5118164B marking da
    Text: •HYUNDAI HY5118164B>HY51161646 1M x 16bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended Data Out mode offers high speed random access of memory cells


    OCR Scan     		PDF HY5118164B HY51161646 HY5118164BJC HY5118164BSLJC HY5118164BTC HY5118164BSLTC HY5116164BJC HY5116164BSLJC HY5116164BTC HY5116164BSLTC A8303 5118164B marking da

    HY5118160BTC

    Abstract: hy5118160b
    Text: "HYUNDAI HY5118160B, HY5116160B _ DESCRIPTION 1M x 16bit CMOS DRAM ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high


    OCR Scan     		PDF HY5118160B, HY5116160B 16bit HY5118160BJC HY5118160BSLJC HY5118160BTC HY5118160BSLTC HY5116160BJC HY5116160BSLJC HY5116160BTC hy5118160b

    ABO-20 L

    Abstract: 1mx1 DRAM
    Text: H Y 5 1 1 6 1 0 0 • H Y U N D A I S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100 is the new generation and fast dynamic RAM organized 16,777,216x 1-bit. Ttie HY5116100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5116100 1AD01-10-MAY94 0005AB7 HY5116100JC HY5116100LJC HY5116100TC ABO-20 L 1mx1 DRAM

    Untitled

    Abstract: No abstract text available
    Text: HYM591600 M-Series •HYUNDAI 16M X 9 -b it CMOS DRAM MODULE DESCRIPTION The HYM591600 is a 16M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.2?k F decoupling capacitor is mounted for


    OCR Scan     		PDF HYM591600 HY5116100 HYM591600M/LM/TM/LTM HYM591600M/LM 1-781MIN. HYM591600TM/LTM 0-05f1 76MIN. 03IMIN.

    Untitled

    Abstract: No abstract text available
    Text: «HYUNDAI HY5116160 Series 1Mx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116160 16-bit 16-bit. HY5116160 1AD11-10-MAY94 HY5116160JC HY5116160SLJC

    Untitled

    Abstract: No abstract text available
    Text: -HYUNDAI H Y 5 1 1 6 1 6 4 B S e r ie s 1Mx 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5116164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF 16-bit HY5116164B 16-bit. HY5116164B 1ADS7-10-MAY95 HY5116164BJC HY5116164BSLJC HY5116164BTC

    Untitled

    Abstract: No abstract text available
    Text: HYM591600 Series ' H Y U N D A I SEMICONDUCTOR 16M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591600 is a 16M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for


    OCR Scan     		PDF HYM591600 HY5116100 HYM591600M/LM/TM/LTM HYM591600M/LM HYM591600TM/LTM 1BD03-00-MAY93 HYM591600M HYM591600LM

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HYM581600 Series 16M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode C M O S DRAM module consisting of eight HY5116100 in 24/28 pin SO J or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted for


    OCR Scan     		PDF HYM581600 HY5116100 HYM581600M/LM/TM/LTM 1BD01-00-MAY93 HYM58160 HYM581600TM/LTM 251MAX 01-00-M

    wj da11 pin

    Abstract: 22TCW
    Text: •HYUNDAI H Y 5 1 1 6 1 6 0 B S e r ie s 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF 16-bit HY5116160B 16-bit. 1AD53-10-MAY95 HY5116160BJC HY5116160BSLJC HY5116160BTC wj da11 pin 22TCW

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HYM564100 X-Series IM X 64-bit CMOS DRAM MODULE DESCRIPTION The HYM564100 is a 1M x 64-bit Fast page mode CMOS DRAM module consisting of four HY5116160 in 42/42pin SOJ, two 16-bit and one 4-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board. 0.22p.F


    OCR Scan     		PDF HYM564100 64-bit HY5116160 42/42pin 16-bit HYM564100XG/SLXG A0-A11 DQ0-DQ63)

    HY5116100B

    Abstract: 10k52 1AD41-00-MAY95 1AD41
    Text: -HYUNDAI HY5116100B Series 16Mx 1-bit CMOS DRAM DESCRIPTION The H Y5116100B is the new generation and fast dynam ic RAM organized 16,777,216 x 1-bit. T he H Y 5116100B utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116100B Y5116100B 5116100B 1AD41-00-MAY95 HY5116100BJ HY5116100BSLJ HY5116100BT HY5116100BSLT 10k52 1AD41-00-MAY95 1AD41

    HY5116164B

    Abstract: HY5116164BJC wx19
    Text: »HYUNDAI HY5116164B Series 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5116164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116164B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116164B 16-bit 16-bit. 1AOS7-10-MAY95 HY5116164BJC HY5116164BSLJC wx19