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    HY51V64160 Datasheets Context Search

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    4MX16

    Abstract: No abstract text available
    Text: HY51V64160,HY51V65160 4Mx16, Fast Page mode 1st Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 4,194,304 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow


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    HY51V64160 HY51V65160 4Mx16, 16-bit 4Mx16 PDF

    HY51V64160A

    Abstract: No abstract text available
    Text: HY51V64160A,HY51V65160A 4Mx16, Fast Page mode 2nd Generation Preliminary DESCRIPTION This family is a 64M bit dynamic RAM organized 4,194,304 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow


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    HY51V64160A HY51V65160A 4Mx16, 16-bit 4Mx16 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY51V64160A,HY51V65160A 4Mx16, Fast Page mode 2nd Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 4,194,304 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow


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    HY51V64160A HY51V65160A 4Mx16, 16-bit 4Mx16 12/Sep PDF

    16mx4

    Abstract: HY51V64400A
    Text: HY51V64400A,HY51V65400A 16Mx4, Fast Page mode 2nd Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow


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    HY51V64400A HY51V65400A 16Mx4, 128ms cycle/64ms) 16Mx4 10/Sep PDF

    Untitled

    Abstract: No abstract text available
    Text: HY51V64800A,HY51V65800A 8Mx8, Fast Page mode 2nd Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 8,388,608 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow


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    HY51V64800A HY51V65800A 128ms cycle/64ms) 12/Sep PDF

    HY51V64400A

    Abstract: No abstract text available
    Text: HY51V64400A,HY51V65400A 16Mx4, Fast Page mode 2nd Generation Preliminary DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow


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    HY51V64400A HY51V65400A 16Mx4, 128ms cycle/64ms) 16Mx4 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY51V64800A,HY51V65800A 8Mx8, Fast Page mode 2nd Generation Preliminary DESCRIPTION This family is a 64M bit dynamic RAM organized 8,388,608 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow


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    HY51V64800A HY51V65800A 128ms cycle/64ms) PDF

    4MXW

    Abstract: No abstract text available
    Text: C HHYum m i * HY51V64160A,HY51V65160A 4MxW , Fast Page mode DESCRIPTION This family is a 64M bit dynamic RAM organized 4,194,304 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow


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    HY51V64160A HY51V65160A 16-bit 4MXW PDF

    SOP-54

    Abstract: SOP54 F0600 F06-00
    Text: HYUNDAI HY51V64160 Series 4M X 16-bit CMOS ORAM with 2 CAS ADVANCED INFORMATION DESCRIPTION The HY51V64160 is the new generation and fast dynamic RAM organized 4,194,304 x 16-bit. The HY51V64160 utilizes Hyundai's C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


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    HY51V64160 16-bit 16-bit. familie13 512ms A0-A12* DQ0-DQ15 SOP-54 SOP54 F0600 F06-00 PDF

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HY51V64160, HY51V65160 4Mx16, Fast Page mode 1st Generation DESCRIPTION This fam ily is a 64M bit dynam ic RAM organized 4,194,304 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access mem ory w ithin the same row. The circuit and process design allow


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    HY51V64160, HY51V65160 4Mx16, 16-bit 0-A12) 4Mx16 PDF

    Untitled

    Abstract: No abstract text available
    Text: - H Y U N D A I « HY51V64160.HY51 V65160 4Ux16, Fast Page mode DESCRIPTION This family is a 64M bit dynamic RAM organized 4,194,304 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow


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    HY51V64160 V65160 4Ux16, 16-bit A0-A12) PDF

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HY51V64160,HY51 V65160 4M x 16-bit CMOS DRAM with Fast Page Mode PRELIM IN A R Y DESCRIPTION ORDERING INFORMATION This fam ily is a 64M bit d ynam ic RAM organized 4,194,304 x16-bit configuration with Fast Page mode CM O S DRAMs. Fast Page m ode offers high speed


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    HY51V64160 V65160 16-bit HY51V64160TC HY51V64160LTC HY51V64160SLTC HY51V65160TC HY51V65160LTC HY51V65160SLTC x16-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: HY51V64160 Series •HYUNDAI 4M X 16-bit CM OS DRAM with 2 CAS ADVANCED INFORMATION DESCRIPTION The HY51V64160 is the new generation and fast dynamic RAM organized 4,194,304 x 16-bit. The HY51V64160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


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    HY51V64160 16-bit 16-bit. HY51V64160 A0-A12* DQ0-DQ15 1AF06-00-MAY95 405fl PDF

    S5400A

    Abstract: RO3035
    Text: •« Y U M D H I • HY51 V64400A,HY51 V65400A 16Mx4, Fast Page mode DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow


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    V64400A V65400A 16Mx4, 128ms cycle/64ms) S5400A RO3035 PDF

    BEDO RAM

    Abstract: hy5118160b HY512264 HY5117404 HY5118164B
    Text: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE


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    HY531000A. HY534256A. 16-bit. HY5216257. x16-bit. DB101-20-MAY95 BEDO RAM hy5118160b HY512264 HY5117404 HY5118164B PDF

    HY5116400BT

    Abstract: HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ HY531000AJ hy51v65804 HY5117400BJ
    Text: • « Y U MD Al DRAM ORDERING INFORMATION 1M bit 1Mx1 HY531000AJ HY531000ALJ 60/70/80 1M bit (256KX4) HY534256AJ HY534256ALJ 45/50/60 2M bit (128KX16) HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC HY512264SLTC


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    256KX4) HY531000AJ HY531000ALJ HY534256AJ HY534256ALJ HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY5116400BT HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ hy51v65804 HY5117400BJ PDF

    HY5118164B

    Abstract: hy5118160b HY5118160 HY51V65400TC HY5117804B
    Text: DRAM PRODUCT 16Mbit As of '96.3Q DESCRIPTION PART NO. 4M x 4 EDO,2< Ref. 3.3V PACKAGE OPTION ACCESS TIME ns OPERATING CURRENT (mA.MAX) STANDBY CURRENT (mA,MAX) TTL CMOS AVAILABILITY HY51V17404A SO JJSO P I (300mil) 60/70/80 120/100/90 l 0.5 NOW HY51V17404B


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    16Mbit HY51V17404A HY51V17404B 300mil) 400mil) HY5118164B hy5118160b HY5118160 HY51V65400TC HY5117804B PDF

    HY51V18164

    Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
    Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC


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    256Kx4) 256x8) 128Kx16) HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY51V18164 HY5118164 HY514260 HY51V65400 HY51V17804CJ PDF

    HY514260

    Abstract: HY5118160 HY5116160 HY5117404 HY51V65400 HY511616
    Text: •'HYUNDAI — • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUIC REFERENCE DRAM Part Numbering Ordering Information 3. DRAM DATA SHEETS 1M-bit DRAM Page HY531000A. 1M x1-bit, 5V, F P .


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    HY531000A. HY534256A. 256Kx4-bit, HY512260. 128KX16-bit, HY514260 HY5118160 HY5116160 HY5117404 HY51V65400 HY511616 PDF