Untitled
Abstract: No abstract text available
Text: HY51V64400HG 16M x 4Bit Fast Page DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 16,777,216 x 4 bit configuration with Fast Page mode CMOS DRAMs. Fage page mode offers high speed of random access memory within the same row. The
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HY51V64400HG
64Mbit
400mil
32pin
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16mx4
Abstract: HY51V64400A
Text: HY51V64400A,HY51V65400A 16Mx4, Fast Page mode 2nd Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow
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HY51V64400A
HY51V65400A
16Mx4,
128ms
cycle/64ms)
16Mx4
10/Sep
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Untitled
Abstract: No abstract text available
Text: HY51V64400,HY51V65400 16Mx4, Fast Page mode 1st Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow
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HY51V64400
HY51V65400
16Mx4,
16Mx4
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HY51V64400A
Abstract: No abstract text available
Text: HY51V64400A,HY51V65400A 16Mx4, Fast Page mode 2nd Generation Preliminary DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow
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Original
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HY51V64400A
HY51V65400A
16Mx4,
128ms
cycle/64ms)
16Mx4
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PDF
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Untitled
Abstract: No abstract text available
Text: HY51V64400HG 1SMx4,3.3V, 8K Ref, FP DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 16,777,216 x 4 bit configuration with Fast Page mode CMOS DRAMs. Fage page mode offers high speed of random access memory within the same row. The advanced circuit and process allow this device to achieve high performance and low power dissipation,
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HY51V64400HG
64Mbit
16Mx4,
400mil
32pin
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v64_5
Abstract: 51V65400 HY51V65400
Text: “HYUNDAI HY51V64400, HY51V65400 _16M x 4-bit CMOS DRAM with Fast Page Mode PRELIMINARY DESCRIPTION ORDERING INFORMATION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high
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HY51V64400,
HY51V65400
HY51V64400JC
HY51V64400LJC
HY51V64400SLJC
HY51V64400TC
HY51V64400SLTC
HY51V65400JC
HY51V65400LJC
v64_5
51V65400
HY51V65400
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Untitled
Abstract: No abstract text available
Text: HY51V64400 Series •HYUNDAI 16Mx 4-bit CMOS DRAM ADVANCED INFORMATION DESCRIPTION The HY51V64400 is the new generation and fast dynamic RAM organized 16,777,216 x 4-bit. The HY51V64400 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51V64400
HY51V64400
A0-A12*
1AF02-00-M
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Untitled
Abstract: No abstract text available
Text: ♦ HY51V64400, HY51V65400 « « rU M D /ll > 16Mx4, Fast Page mode DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CM OS DRAM s. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow
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HY51V64400,
HY51V65400
16Mx4,
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY51V64400 Series 16Mx 4-bit CMOS DRAM ADVANCED INFORMATION DESCRIPTION The HY51V64400 is the new generation and fast dynamic RAM organized 16,777,216 x 4-bit. The HY51V64400 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY51V64400
1AF02-00-MAY95
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY51V64400, HY51V65400 16Mx4, Fast Page mode 1st Generation DESCRIPTION This fam ily is a 64M bit dynam ic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access mem ory w ithin the same row. The circuit and process design allow
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HY51V64400,
HY51V65400
16Mx4,
0-A12)
16Mx4
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S5400A
Abstract: RO3035
Text: •« Y U M D H I • HY51 V64400A,HY51 V65400A 16Mx4, Fast Page mode DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow
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V64400A
V65400A
16Mx4,
128ms
cycle/64ms)
S5400A
RO3035
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PDF
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1MX16BIT
Abstract: 16MX1
Text: 'H Y U N D A I TABLE OF CONTENTS 1. TABLE OF CONTENTS In d e x . 1 2. PRODUCT QUICK REFERENCE
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256Kx4-bit,
1MX16BIT
16MX1
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Untitled
Abstract: No abstract text available
Text: 2. PR O D U C T Q U IC K REFERENCE PRODUCT QUICK REFERENCE DRAM PART N U M BERIN G Cheong Ju GM 71 X X XX XX X X X X - PRO D U CT QUICK j REFERENCE Ü" XX P R E F IX O F C-Site M E M O R Y IC F A M IL Y 71 : D RA M S P E E D _ PRO CESS 5 : 50ns
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8Mx72
7738280CTG
A6V8730E18H
71V65800Cx9
HY51V
65803HG
71V64403C
71V65403C
65403HG
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BEDO RAM
Abstract: hy5118160b HY512264 HY5117404 HY5118164B
Text: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE
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HY531000A.
HY534256A.
16-bit.
HY5216257.
x16-bit.
DB101-20-MAY95
BEDO RAM
hy5118160b
HY512264
HY5117404
HY5118164B
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edo ram 4Mx16
Abstract: 71V18163CJ6 16mx4 edo ram 16Mx4 1MX16
Text: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE DRAM Part Numbering g D RAM Module Part Numbering 12 D RAM Ordering Information 14 DRAM Module Ordering Information 15 3. DATA SHEETS DRAM 16M-bit GM 71C S 16400C(CL) 4Mx4, 5V, 4K Ref, FP
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16M-bit
16400C
17400C
16403C
17403C
16400HG
edo ram 4Mx16
71V18163CJ6
16mx4
edo ram 16Mx4
1MX16
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HY5118164B
Abstract: hy5118160b HY5118160 HY51V65400TC HY5117804B
Text: DRAM PRODUCT 16Mbit As of '96.3Q DESCRIPTION PART NO. 4M x 4 EDO,2< Ref. 3.3V PACKAGE OPTION ACCESS TIME ns OPERATING CURRENT (mA.MAX) STANDBY CURRENT (mA,MAX) TTL CMOS AVAILABILITY HY51V17404A SO JJSO P I (300mil) 60/70/80 120/100/90 l 0.5 NOW HY51V17404B
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16Mbit
HY51V17404A
HY51V17404B
300mil)
400mil)
HY5118164B
hy5118160b
HY5118160
HY51V65400TC
HY5117804B
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HY51V18164
Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC
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256Kx4)
256x8)
128Kx16)
HY534256AJ
HY534256ALJ
HY512800J
HY512800LJ
HY512800SLJ
HY512264JC
HY512264LJC
HY51V18164
HY5118164
HY514260
HY51V65400
HY51V17804CJ
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