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    SK Hynix Inc HY57V561620FTP-H-C

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    Quest Components HY57V561620FTP-H-C 20
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    SK Hynix Inc HY57V561620TH

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    SK Hynix Inc HY57V561620CT-H

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    SK Hynix Inc HY57V561620CTP-H

    IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
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    Quest Components HY57V561620CTP-H 196
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    SK Hynix Inc HY57V561620BT-H

    IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
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    Quest Components HY57V561620BT-H 72
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    HY57V561620 Datasheets (92)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY57V561620 Hynix Semiconductor 4Banks x 4M x 16-Bit Synchronous DRAM Original PDF
    HY57V561620B Hynix Semiconductor 4 Banks x 4M x 16-Bit Synchronous DRAM Original PDF
    HY57V561620B(L/S)T-6 Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V561620B(L/S)T-6 Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V561620B(L/S)T-7 Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V561620B(L/S)T-7 Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V561620B(L/S)T-8 Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V561620B(L/S)T-8 Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V561620B(L/S)T-H Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V561620B(L/S)T-H Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V561620B(L/S)T-K Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V561620B(L/S)T-K Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V561620B(L/S)T-P Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V561620B(L/S)T-P Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V561620B(L/S)T-S Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V561620B(L/S)T-S Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V561620BLT Hynix Semiconductor 4 Banks x 4M x 16-Bit Synchronous DRAM Original PDF
    HY57V561620B(L)T-6(I) Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V561620B(L)T-6(I) Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V561620BLT-6I Hynix Semiconductor 4 Banks x 4M x 16-Bit Synchronous DRAM Original PDF

    HY57V561620 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HY57V561620T

    Abstract: HY57V561620
    Text: HY57V561620T 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V561620 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V561620 is organized as 4 banks of


    Original     		PDF HY57V561620T 16Bit HY57V561620 456bit 304x16. 400mil 54pin HY57V561620T

    Untitled

    Abstract: No abstract text available
    Text: IC INFORMATION Function DRAM CMOS Type HY57V561620BLT-H Model AVIC-DRV150 VDD1 1 54 VSS3 DQ0 2 53 DQ15 VDDQ1 3 52 VSSQ4 DQ1 4 DQ2 5 VSSQ1 6 DQ3 7 DQ4 8 VDDQ2 9 DQ5 10 DQ6 11 J 1/1 E 51 DQ14 A0-A11 : Address input BA0-BA1 : Bank select address DQ0-DQ15 : Data input/output


    Original     		PDF HY57V561620BLT-H AVIC-DRV150 A0-A11 DQ0-DQ15 A10/AP

    Untitled

    Abstract: No abstract text available
    Text: HY57V561620B L T-I 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B-I is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16.


    Original     		PDF HY57V561620B 16Bit HY57V561620B-I 456bit 304x16. 400mil 54pin

    54PIN

    Abstract: 54pin TSOP HY57V561620C HY57V561620CT HY57V561620ctp
    Text: HY57V561620C L T(P) 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C(L)T(P) Series is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C(L)T(P) Series is organized as 4banks of 4,194,304x16.


    Original     		PDF HY57V561620C 16Bit 456bit 304x16. 400mil 54pin 54pin TSOP HY57V561620CT HY57V561620ctp

    HY57V561620

    Abstract: HY57V561620LT-8 HY57V561620LT-H HY57V561620LT-HP HY57V561620T HY57V561620T-8 HY57V561620T-H HY57V561620T-HP HY57V561620T-P HY57V561620T-S
    Text: HY57V561620 L T 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16.


    Original     		PDF HY57V561620 16Bit HY57V561620T 456bit 304x16. 400mil 54pin HY57V561620LT-8 HY57V561620LT-H HY57V561620LT-HP HY57V561620T-8 HY57V561620T-H HY57V561620T-HP HY57V561620T-P HY57V561620T-S

    HY57V561620C

    Abstract: HY57V561620CT
    Text: HY57V561620C L T(P) 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C(L)T(P) Series is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C(L)T(P) Series is organized as 4banks of 4,194,304x16.


    Original     		PDF HY57V561620C 16Bit 456bit 304x16. 400mil 54pin HY57V561620CT

    Untitled

    Abstract: No abstract text available
    Text: HY57V561620 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V561620 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of


    Original     		PDF HY57V561620 16Bit HY57V561620 456bit 304x16. 400mil 54pin

    HY57V561620A

    Abstract: HY57V561620AT-H HY57V561620AT
    Text: HY57V561620AT 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V561620A is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620A is organized as 4banks of 4,194,304x16.


    Original     		PDF HY57V561620AT 16Bit HY57V561620A 456bit 304x16. 400mil 54pin HY57V561620AT-H HY57V561620AT

    HY57V561620CT-6

    Abstract: HY57V561620C HY57V561620CLT-6 HY57V561620CLT-H HY57V561620CLT-K HY57V561620CT-8 HY57V561620CT-H HY57V561620CT-K HY57V561620CT-P HY57V561620CT-S
    Text: HY57V561620C L T 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16.


    Original     		PDF HY57V561620C 16Bit 456bit 304x16. 400mil 54pin HY57V561620CT-6 HY57V561620CLT-6 HY57V561620CLT-H HY57V561620CLT-K HY57V561620CT-8 HY57V561620CT-H HY57V561620CT-K HY57V561620CT-P HY57V561620CT-S

    HY57V561620B

    Abstract: HY57V561620BT-H
    Text: HY57V561620B L/S T 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16.


    Original     		PDF HY57V561620B 16Bit 456bit 304x16. 400mil 54pin HY57V561620BT-H

    HY57V561620B

    Abstract: HY57V561620BT-H
    Text: HY57V561620B L T 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16.


    Original     		PDF HY57V561620B 16Bit 456bit 304x16. 400mil 54pin HY57V561620BT-H

    HY57V561620HT

    Abstract: No abstract text available
    Text: HY57V561620H L T 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620HT is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620HT is organized as 4banks of 4,194,304x16.


    Original     		PDF HY57V561620H 16Bit HY57V561620HT 456bit 304x16. 400mil 54pin

    HY57V561620CT-6

    Abstract: HY57V561620CT-6 datasheet HY57V561620CT-8 27ns refresh logic
    Text: HY57V561620C L T 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16.


    Original     		PDF HY57V561620C 16Bit 456bit 304x16. 400mil 54pin HY57V561620CT-6 HY57V561620CT-6 datasheet HY57V561620CT-8 27ns refresh logic

    HY57V561620CT-7

    Abstract: HY57V561620ct-6 hy57v561620ctp
    Text: HY57V561620C L T 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16.


    Original     		PDF HY57V561620C 16Bit 456bit 304x16. 400mil 54pin HY57V561620CT-7 HY57V561620ct-6 hy57v561620ctp

    Untitled

    Abstract: No abstract text available
    Text: HY57V561620T 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V561620 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of


    Original     		PDF HY57V561620T 16Bit HY57V561620 456bit 304x16. 400mil 54pin

    Untitled

    Abstract: No abstract text available
    Text: HY57V561620C L T 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16.


    Original     		PDF HY57V561620C 16Bit 456bit 304x16. 400mil 54pin

    HY57V561620

    Abstract: HY57V561620LT-8 HY57V561620LT-H HY57V561620LT-HP HY57V561620T HY57V561620T-8 HY57V561620T-H HY57V561620T-HP HY57V561620T-P HY57V561620T-S
    Text: HY57V561620 L T 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16.


    Original     		PDF HY57V561620 16Bit HY57V561620T 456bit 304x16. 400mil 54pin HY57V561620LT-8 HY57V561620LT-H HY57V561620LT-HP HY57V561620T-8 HY57V561620T-H HY57V561620T-HP HY57V561620T-P HY57V561620T-S

    HY57V561620

    Abstract: HY57V561620LT-8 HY57V561620LT-H HY57V561620LT-HP HY57V561620T HY57V561620T-8 HY57V561620T-H HY57V561620T-HP HY57V561620T-P HY57V561620T-S
    Text: HY57V561620 L T 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16.


    Original     		PDF HY57V561620 16Bit HY57V561620T 456bit 304x16. 400mil 54pin HY57V561620LT-8 HY57V561620LT-H HY57V561620LT-HP HY57V561620T-8 HY57V561620T-H HY57V561620T-HP HY57V561620T-P HY57V561620T-S

    Untitled

    Abstract: No abstract text available
    Text: HY57V561620B L/S T 4 Banks x 4M x 16Bit Synchronous DRAM Doucment Title 4 Bank x 4M x 16Bit Synchronous DRAM Revision History Revision No. History Draft Date 1.4 143MHz Speed Added July 14. 2003 Remark This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for


    Original     		PDF HY57V561620B 16Bit 143MHz 456bit

    HY57V561620

    Abstract: HY57V561620LT-8 HY57V561620LT-H HY57V561620LT-S HY57V561620T-8 HY57V561620T-H HY57V561620T-S
    Text: HY57V561620 L T 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16.


    Original     		PDF HY57V561620 16Bit 456bit 304x16. 400mil 54pin HY57V561620LT-8 HY57V561620LT-H HY57V561620LT-S HY57V561620T-8 HY57V561620T-H HY57V561620T-S

    refresh logic

    Abstract: No abstract text available
    Text: HY57V561620H 4 Banks x 4M x 16Bit Synchronous DRAM Preliminary DESCRIPTION The Hyundai HY57V561620H is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620H is organized as 4banks of 4,194,304x16.


    Original     		PDF HY57V561620H 16Bit HY57V561620H 456bit 304x16. 400mil 54pin refresh logic

    Untitled

    Abstract: No abstract text available
    Text: HY57V561620HT 16Mx16-bit, SK Ref., 4Banks, 3.3V DESCRIPTION The HY57V561620HT is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620HT is organized as 4banks of 4,194,304x16.


    OCR Scan     		PDF HY57V561620HT 16Mx16-bit, HY57V561620HT 456bit 304x16. 400mil 54pin

    256MO

    Abstract: No abstract text available
    Text: HY57V561620 L T 16Mx16-blt, 8K Ref., 4Banks, 3.3V DESCRIPTION The H Y 5 7 V 5 6 16 2 0 is a 2 68,435,456b it C M O S Synchronous DRA M , ideally suited for the main memory applications which require large m em ory density and high bandwidth. H Y 5 7 V 5 6 16 2 0 is organized as 4 banks of 4 ,1 9 4,30 4 x 16 .


    OCR Scan     		PDF HY57V561620 16Mx16-blt, 256M-bit 400mil 54pin 256MO

    hynix hy

    Abstract: 57v561620
    Text: HY57V561620 L T-I 16Mx16-bitf 8K Ref., ABanks, 3.3V DESCRIPTION The Hynix HY 57V 561 620 is a 2 6 8 , 4 3 5 , 4 5 6 b i t C M O S S y n c h r o n o u s D R A M , i d e a l l y s u i t e d f o r t he M o b i l e a p p l i c a t i o n s which require low power co nsum ption


    OCR Scan     		PDF HY57V561620 16Mx16-bitf 304x16. 16Mx16-bft, 400mi SJ32JU hynix hy 57v561620