IS61C1024
Abstract: No abstract text available
Text: I S 6 1 C 1 I S 6 1 C 1 2 2 4 4 ISSI L 128K x 8 HIGH-SPEED CMOS STATIC RAM JULY 1997 FEATURES DESCRIPTION • High-speed access time: 12, 15, 20, 25 ns • Low active power: 600 m W typical • Low standby power: 500 fiW (typical) C M O S standby The IS S IIS61C1024 and IS61C1024L are very high-speed,
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IIS61C1024
IS61C1024L
072-word
IS61C1024L-12JRI
IS61C1024L-12NRI
IS61C1024L-12KRI
IS61C1024L-12TRI
300-mil
400-mil
IS61C1024
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NS125
Abstract: No abstract text available
Text: ISSI IS61C632A 32K x 32 SYNCHRONOUS FAST STATIC RAM PRELIMINARY JANUARY 1997 FEATURES DESCRIPTION • Fast access time: The IS S IIS61C632A is a high-speed, low-power synchro nous static RAM designed to provide a burstable, highperformance, secondary cache for the i486 , Pentium™,
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IS61C632A
ns-125
ns-100
ns-83
ns-75
ns-66
100-Pin
SR81995C32A
IS61C632A-4TQ
NS125
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Untitled
Abstract: No abstract text available
Text: IS61C512 64K x 8 HIGH-SPEED CMOS STATIC RAM ISSI AUGUST 1995 FEATURES DESCRIPTION • Pin compatible with 128K x 8 devices The IS S IIS61C512 is a very high-speed, low power, 65,536 word by 8-bit CMOS static RAMs. They are fabricated using IS SI's high-performance CMOS technology. This highly reli
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IS61C512
IS61C512
IS61C512-15J
IS61C512-15N
IS61C512-15K
IS61C512-15M
IS61C512-20J
IS61C512-20N
IS61C512-20K
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Untitled
Abstract: No abstract text available
Text: issr IS61C5128 512K x 8 HIGH-SPEED CMOS STATIC RAM FEBRUARY 1999 FEATURES DESCRIPTION • High-speed access times: 10,12 and 15 ns The IS S IIS61C5128 is a very high-speed, low power, 524,288-word by 8-bit CMOS static RAM. The IS61C5128 is fabricated using IS S I's high-performance CMOS tech
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C5128
IIS61C5128
288-word
IS61C5128
IS61C5128-1
IS61C5128-1OT
400-mil
IS61C5128-12K
IS61C5128-12T
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Untitled
Abstract: No abstract text available
Text: ISSI 32K x 8 HIGH-SPEED CMOS STATIC RAM august 1995 FEATURES DESCRIPTION • High-speed access time: 10, 12, 15, 20, 25 ns The IS S IIS61C256AH and IS61M256 are very high-speed, low power, 32,768 word by 8-bit static RAMs. They are fabricated using ¡SSI's high-performance CMOS technology.
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IIS61C256AH
IS61M256
450-MILTSOP
IS61C256AH-25N
IS61C256AH-25J
300-mil
IS61M256
IS61M256-10N
IS61M256-10J
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Untitled
Abstract: No abstract text available
Text: ISSI IS6 1 C12816 128K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES DESCRIPTION • High-speed access time: 10, 12,15, and 20 ns • CMOS low power operation The IS S IIS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated
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C12816
IIS61C12816
152-bit
PK13197K
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Untitled
Abstract: No abstract text available
Text: ISSI 32K x 32 SYNCHRONOUS FAST STATIC RAM ADVANCE INFORMATION SEPTEMBER 1995 FEATURES DESCRIPTION • Fast access time: The IS S IIS61C632A is a high-speed, low-power synchro nous static RAM designed to provide a burstable, highperformance, secondary cache for the i486 , Pentium™,
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OCR Scan
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IIS61C632A
680X0â
ns-75
ns-66
ns-60
ns-50
000007b
SR81995C32A
IS61C632A
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PDF
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Untitled
Abstract: No abstract text available
Text: ISSI IS61C632 32K x 32 SYNCHRONOUS FAST STATIC RAM P R E L IM IN A R Y S E P T E M B E R ! 995 FEATURES DESCRIPTION • The IS S IIS61C632 is a high-speed, low-power synchronous sta tic RAM desig ned to pro vid e a b u rsta ble, highperformance, secondary cache for the i486 , Pentium™,
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OCR Scan
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IS61C632
IIS61C632
680X0â
ns-66
ns-60tested.
T0044D4
SR81995C32
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Untitled
Abstract: No abstract text available
Text: IS61C 512 64K x 8 HIGH-SPEED CMOS STATIC RAM ISSI ju n e 1997 FEATURES DESCRIPTION • Pin compatible with 128K x 8 devices The IS S IIS61C512 is a very high-speed, low power, 65,536 word by 8-bit CMOS static RAMs. They are fabricated using IS S I's high-performance CMOS technology. This highly
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OCR Scan
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IS61C512
SR024-1
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IS61C1024
Abstract: No abstract text available
Text: I S 6 1 C 1 0 2 4 I S 6 1 C 1 0 2 4 L 128K x 8 HIGH-SPEED CMOS STATIC RAM JULY 1997 FEATURES DESCRIPTION • High-speed access time: 12, 15, 20, 25 ns The IS S IIS61C1024 and IS61C1024L are very high-speed, low power, 131,072-word by 8-bit CMOS static RAMs. They
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IS61C1024L
IS61C1024
IS61C1024L
072-word
SR028-1H
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IS61C1024
Abstract: IS61C1024-20M
Text: IS61C1024 IS61C1024L 128K x ISSI 8 HIGH-SPEED CMOS STATIC RAM Ja n u a r y 1996 FEATURES DESCRIPTION • High-speed access time: 12, 15, 20, 25 ns The IS S IIS61C 1024 and IS 61C 1024L are very high-speed, low power, 131,072-w ord by 8-bit CM O S static RAMs. T hey
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IS61C1024
IS61C1024L
IS61C
1024L
072-w
IS61CIS61C1024L-15JI
IS61C1024L-15NI
IS61C1024L-15KI
IS61C1024L-15MI
IS61C1024L-15TI
IS61C1024-20M
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Untitled
Abstract: No abstract text available
Text: I S 6 1 C 1 2 8 1 issr 6 128K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 12, 15, and 20 ns • CMOS low power operation — 450 mW typical operating — 250 fiW (typical) standby • TTL compatible interface levels • Single 5V ± 10% power supply
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44-pin
IIS61C12816
152-bit
SR049-0B
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PDF
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Untitled
Abstract: No abstract text available
Text: IS61C25616 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 5V SUPPLY FEATURES • High-speed access time: 10, 12, and 15 ns • CMOS low power operation • TTL compatible interface levels • Single 5V ± 10% power supply • Fully static operation: no clock or refresh
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OCR Scan
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IS61C25616
44-pin
IIS61C25616
304-bit
IS61C25616-1
400-mil
IS61C25616-12TI
IS61C25616-12KI
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Untitled
Abstract: No abstract text available
Text: IS 6 1 C 1 0 2 4 IS 6 1 C 1 0 2 4 L 128K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES DESCRIPTION • H ig h -s p e e d a cce ss tim e: 1 2 ,1 5 , 20, 25 ns • Low a c tiv e p o w e r: 600 m W typ ical • Low s ta n d b y p ow er: 500 fiW (typ ical) C M O S
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IIS61C1024
IS61C1024L
072-word
IS61C1024L-20J
IS61C1024L-20K
IS61C1024L-20H
IS61C1024L-20T
300-mil
400-mil
IS61C1024L-20JI
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