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    025N08N

    Abstract: IPB025N08N3G IEC61249-2-21 IPB025N08N3 JESD22 IPB02CN08N
    Text: IPB025N08N3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 80 V • N-channel, normal level R DS on ,max 2.5 mΩ • Excellent gate charge x R DS(on) product (FOM) ID 120 A previous engineering sample code: IPB02CN08N • Very low on-resistance R DS(on)


    Original     		IPB025N08N3 IPB02CN08N IEC61249-2-21 PG-TO263-3 025N08N 025N08N IPB025N08N3G IEC61249-2-21 JESD22 IPB02CN08N PDF

    025N08N

    Abstract: IPB02CN08N IPB025N08N3 JESD22 IPB025N08N3 G IPB025N08N3G
    Text: IPB025N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 80 V R DS(on),max 2.5 mΩ ID 120 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPB025N08N3 IPB02CN08N PG-TO263-3 025N08N 025N08N IPB02CN08N JESD22 IPB025N08N3 G IPB025N08N3G PDF