IPD26N06S2L-35 Search Results
IPD26N06S2L-35 Price and Stock
Infineon Technologies AG IPD26N06S2L35ATMA2MOSFET N-CH 55V 30A TO252-31 |
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IPD26N06S2L35ATMA2 | Cut Tape | 2,136 | 1 |
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IPD26N06S2L35ATMA2 | Reel | 2,500 | 53 Weeks, 1 Days | 2,500 |
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IPD26N06S2L35ATMA2 | 3,823 |
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IPD26N06S2L35ATMA2 | 47,466 | 903 |
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IPD26N06S2L35ATMA2 | Cut Strips | 335 | 12 Weeks | 1 |
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IPD26N06S2L35ATMA2 | Cut Tape | 12,263 | 5 |
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IPD26N06S2L35ATMA2 | 58,624 | 1 |
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IPD26N06S2L35ATMA2 | 13 |
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IPD26N06S2L35ATMA2 | Cut Tape | 2,500 |
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IPD26N06S2L35ATMA2 | 13 Weeks | 2,500 |
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Infineon Technologies AG IPD26N06S2L35ATMA1MOSFET N-CH 55V 30A TO252-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD26N06S2L35ATMA1 | Reel |
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Infineon Technologies AG IPD26N06S2L-35Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD26N06S2L-35 | 2,500 | 94 |
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IPD26N06S2L-35 | 400 | 5 |
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IPD26N06S2L-35 | 2,000 |
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IPD26N06S2L-35 | 2,500 |
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Infineon Technologies AG IPD26N06S2L35OPTIMOS POWER-TRANSISTOR Power Field-Effect Transistor, 30A I(D), 55V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD26N06S2L35 | 7,905 |
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IPD26N06S2L-35 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IPD26N06S2L-35 |
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Single: N-Channel 55V MOSFETs; Package: PG-TO252-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 35.0 mOhm; ID (max): 30.0 A; RthJC (max): 2.2 K/W; | Original | |||
IPD26N06S2L35ATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 30A TO252-3 | Original | |||
IPD26N06S2L35ATMA2 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 30A TO252-3 | Original |