IPD30N06S2L-23 Search Results
IPD30N06S2L-23 Price and Stock
Infineon Technologies AG IPD30N06S2L23ATMA3MOSFET N-CH 55V 30A TO252-31 |
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IPD30N06S2L23ATMA3 | Cut Tape | 13,194 | 1 |
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IPD30N06S2L23ATMA3 | Ammo Pack | 18 Weeks, 4 Days | 1 |
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IPD30N06S2L23ATMA3 | 65,330 |
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IPD30N06S2L23ATMA3 | 244,306 | 688 |
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IPD30N06S2L23ATMA3 | Cut Strips | 2,265 | 12 Weeks | 1 |
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IPD30N06S2L23ATMA3 | Cut Tape | 4,649 | 1 |
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IPD30N06S2L23ATMA3 | 274,617 | 1 |
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IPD30N06S2L23ATMA3 | Cut Tape | 32,500 |
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IPD30N06S2L23ATMA3 | 13 Weeks | 2,500 |
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IPD30N06S2L23ATMA3 | 22,000 |
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Infineon Technologies AG IPD30N06S2L23ATMA1MOSFET N-CH 55V 30A TO252-3 |
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IPD30N06S2L23ATMA1 | Reel |
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IPD30N06S2L23ATMA1 | 2,004 | 750 |
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IPD30N06S2L23ATMA1 | 2,010 | 1 |
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Rochester Electronics LLC IPD30N06S2L23ATMA1MOSFET N-CH 55V 30A TO252-3 |
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IPD30N06S2L23ATMA1 | Bulk | 650 |
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Infineon Technologies AG IPD30N06S2L23Trans MOSFET N-CH 55V 30A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD30N06S2L23 | 2,492 | 61 |
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IPD30N06S2L23 | 184 |
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Infineon Technologies AG IPD30N06S2L-23POWER FIELD-EFFECT TRANSISTOR, 30A I(D), 55V, 0.03OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD30N06S2L-23 | 1,993 |
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IPD30N06S2L-23 | 1,897 |
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IPD30N06S2L-23 | 2,492 |
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IPD30N06S2L-23 | 55,500 |
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IPD30N06S2L-23 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IPD30N06S2L-23 |
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Single: N-Channel 55V MOSFETs; Package: PG-TO252-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 23.0 mOhm; ID (max): 30.0 A; RthJC (max): 1.5 K/W; | Original | |||
IPD30N06S2L23ATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 30A TO252-3 | Original | |||
IPD30N06S2L23ATMA3 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 30A TO252-3 | Original |