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Vicor Corporation VI-RF333-EXXX VI-RF333-EXXX 24V 24V 24V 75W
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International Rectifier IRF333
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IRF333 Datasheets (25)

Part	Manufacturer	Description	Datasheet Type	PDF
IRF333	Intersil	4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 ?, N-Channel Power MOSFETs	Original	PDF
IRF333	Fairchild Semiconductor	N-Channel Power MOSFETs, 5.5A, 350 V/400V	Scan	PDF
IRF333	FCI	POWER MOSFETs	Scan	PDF
IRF333	Frederick Components	Power MOSFET Selection Guide	Scan	PDF
IRF333	General Electric	Power Transistor Data Book 1985	Scan	PDF
IRF333	General Electric	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A.	Scan	PDF
IRF333	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
IRF333	International Rectifier	TO-3 N-Channel Hexfet Power MOSFETS	Scan	PDF
IRF333	Motorola	Switchmode Datasheet	Scan	PDF
IRF333	Motorola	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39	Scan	PDF
IRF333	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
IRF333	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
IRF333	Unknown	FET Data Book	Scan	PDF
IRF333	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF

IRF333	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
IRF333	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
IRF333	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
IRF333	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRF333	National Semiconductor	N-thannel Power MOSFETs	Scan	PDF
IRF333	Samsung Electronics	N-CHANNEL POWER MOSFETS	Scan	PDF

IRF333 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
irf332 Abstract: irf330 harris Text: IRF330, IRF331, IRF332, IRF333 S E M I C O N D U C T O R 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.5A and 5.5A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power	Original	PDF	IRF330, IRF331, IRF332, IRF333 TA17414. irf332 irf330 harris
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	PDF	2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
IRF470 Abstract: IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R Text: STI Type: IRF331 Notes: Breakdown Voltage: 350 Continuous Current: 5.5 RDS on Ohm: 1.0 Trans Conductance Mhos: 3.0 Trans Conductance A: 3.0 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 30 Resistance Switching toff: 55 Resistance Switching ID: 3.0	Original	PDF	IRF331 O-204AA/TO-3 IRF332 2N6012 O-247 IRFP352R IRFP353R IRF470 IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R
CMD8 Abstract: No abstract text available Text: IRF232 IRF233 IRF630 By IRF631 Its IRF632 IRF633 2N6759 IRF330 IRF331 IRF333 IRF730 IRF731 Nola1: Non-JEDEC registered valua. lD@ = 25°C Tc 'ro = 100°C VGS th Id e(mA) (V) Min Max R[)S(oo) • d (ft) e (A) (nC) Max Ch. <PF) Con <PF) CtM Proc. Max (PF)	OCR Scan	PDF	DD3711b T-39-01 CMD8
IRF331 Abstract: IRF332 IRF3301 IRF333 IRF330 Text: -Standard Power MOSFETs IRF330, IRF331, IRF332, IRF333 F ile N u m b e r 1570 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors	OCR Scan	PDF	IRF330, IRF331, IRF332, IRF333 50V-400V 92CS-33741 IRF332 IRF333 IRF331 IRF3301 IRF330
IRF331R Abstract: IRF330R ic l00a 250M IRF332R IRF333R Text: _ Rugged Power MOSFETs File Number 2011 IRF330R, IRF331R, IRF332R, IRF333R Avalanche Energy Rated N-Channel Power MOSFETs 4.5A a nd 5.5A, 350V-400V ros on = 1 .0 0 and 1 .5 0 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated	OCR Scan	PDF	IRF330R, IRF331R, IRF332R, IRF333R 50V-400V IRF332R IRF333R 92CS-426S9 IRF331R IRF330R ic l00a 250M
WO2M Abstract: IRF330 IRF331 LM 7801 IRF332 IRF333 Text: □1 J3875081 G E SOLID STATE ¿ Ë 1 3 Û 7 S G 0 1 □□löBGM 7 W 0 1E 18304 Di T " ' 3 £H I - Standard Power MOSFETs IRF330, IRF331, IRF332, IRF333 File Number 1570 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode	OCR Scan	PDF	IRF330, IRF331, IRF332, IRF333 50V-400V IRF332 IRF333 WO2M IRF330 IRF331 LM 7801
Untitled Abstract: No abstract text available Text: IRF330, IRF331y IRF332, IRF333 I ia ttr is sem conduc or 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 4.5A and 5.5A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate	OCR Scan	PDF	IRF330, IRF331y IRF332, IRF333 beRF333
IRF331 Abstract: field effect transistor IRF 900 volts irf330 transistor d 331 data Irf333 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF330 IRF331 IRF333 Pow er Field Effect Transistor N-Channel Enhancem ent-M ode S ilic o n G ate T M O S These TM O S Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid	OCR Scan	PDF	IRF330 IRF331 IRF333 O-204) IRF331. field effect transistor IRF 900 volts transistor d 331 data Irf333
Untitled Abstract: No abstract text available Text: Type No. IRF232 IRF630 IRF631 IRF632 IRF633 9-16 2N6759 2N6760 IRF330 IRF331 IRF333 IRF730 IRF731 TO-204AA 42 T 02 04A A (42) TO-220 (37) TO-220 (37) TO-220 (37) T0-220 (37) TO-220 (37) 70220 (37) T0204AA (42) TO-204AA (42) T 02 04A A (42) T0-204AA (42)	OCR Scan	PDF	IRF232 IRF233 IRF630 IRF631 IRF632 IRF633 MTP12N18 MTP12N20 2N6759 2N6760
irf332 Abstract: IRF331 IRF3302 Text: H E D I 4ÖS5M52 G0Cm3t. Q \| Data Sheet No. PD-9.302H INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER I« R T-39-11 REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF330 IRF331 IRF332 IRF333 Product Summary 400 Volt, 1.0 Ohm HEXFET TO-204AlA TO-3 Hermetic Package	OCR Scan	PDF	S5M52 T-39-11 IRF330 IRF331 IRF332 IRF333 O-204 G-119 IRF330, IRF331, IRF3302
1RF330 Abstract: No abstract text available Text: MOTOROLA SC X S T R S /R IME F D I t3fci72SM OGä^fc,?! 4 \| 7-3Ÿ-I/ MOTOROLA • I SEM IC O N D U C T O R TECHNICAL DATA IRF330 IRF331 IRF333 P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancem ent-Mode Silico n Gate T M O S These T M O S Power FETs are designed for high	OCR Scan	PDF	t3fci72SM IRF330 IRF331 IRF333 IRF330, IRF333 1RF330, 1RF330
IRF332 Abstract: IRF3319 irf330 Text: I LArrrti— IRF330, IRF3319 IRF332, IRF333 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.5A and 5.5A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power	OCR Scan	PDF	IRF330, IRF3319 IRF332, IRF333 TA17414. IRF331, RF333 IRF332 irf330
IRF449 Abstract: irf362 irf413 IRF352 IRF353 IRF360 IRF421 IRF430 IRF433 IRF441 Text: - 25 2 - Mi m ± « % Vds Vg s or Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR	OCR Scan	PDF	Ta-25 IRF352 IRF353 IRF360 O-204AE IRF362 TQ-204AE IRF421 O-3150 O-204AA IRF449 irf362 irf413 IRF352 IRF353 IRF360 IRF421 IRF430 IRF433 IRF441

irf840 Abstract: equivalent irf840 irf840 equivalent irf840 rf MTM3N55 IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF Text: 1-17 MOSPOWER Cross Reference List c « ss <0J= P fi g c i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o \| I O O I I I P I I I \| I o o r i mm \| ioom m I ' < O Ò ' ' ' lO ' ' ' ' ' L -^ ^ l I c\i CM i I I j j CO 00 CO CO j	OCR Scan	PDF	IVN6100TNU IVN6200CND O-220 VN0401D IVN6200CNE T0-220 IRF533 IVN6200CNF VN0801D irf840 equivalent irf840 irf840 equivalent irf840 rf MTM3N55
1RF321 Abstract: IRF322 IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 Text: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350	OCR Scan	PDF	IRF450 IRF452 IRF440 IRF442 VNP002A* VN5001A IRF430 VN5002A IRF432 IRF420 1RF321 IRF322 IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452
VN64GA Abstract: IRF733 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150 Text: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) rDS(on) (Ohms) >d Continuous (Amps) Power Dissipation (Watts) 100 100 100 100 100 100 100 100 100 100 90 90	OCR Scan	PDF	IRF150 IRF152 IRF140 IRF142 VN1000A IRF130 VN1001A IRF132 IRF120 IRF122 VN64GA IRF733 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150
irf250 Abstract: IRF133 international rectifier 2sk135 equivalent HPWR 6501 IRF350 2SK132 2SK133 HPWR-6502 HPWR-6503 HPWR-6504 Text: MOSPOWER Cross Reference List MOSPOWER Cross Reference List HEWLETT-PACKARD Industry Part No. HPWR-6501 HPW R-6502 HPW R-6503 HPW R-6504 BV d s S Volts rDS(on) (Ohms) Package 450 400 450 400 0.85 0.74 1.0 1.0 TO -3 TO -3 TO -3 TO -3 100 120 140 160 180 200	OCR Scan	PDF	PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 irf250 IRF133 international rectifier 2sk135 equivalent HPWR 6501 IRF350 2SK133
1RF820 Abstract: 733 331 VN64GA CHARACTERISTICS DIODE 10SI 10 IRF332 VN4000A IRF340 IRF440 IRF450 IRF820 Text: Ü Ü A C D ^ U /C D M i v i a iv i v ^ i v T T k iv r i i i i i v D r/\W i t i v u v i w C A lA A ^ /\ r i f^ .n \ M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING Packages: I B V qss Volts 4 5 0 -5 0 0 TO-3 TO-220	OCR Scan	PDF	to-220 to-39 to-237 to-92 to-202 IRF450 IRF840 IRF440 VN5001D/IRF830 VNP002A* 1RF820 733 331 VN64GA CHARACTERISTICS DIODE 10SI 10 IRF332 VN4000A IRF340 IRF820
irf150 Abstract: VN64GA 2SK134 2SK132 2SK133 HPWR-6502 HPWR-6503 HPWR-6504 IRF122 IRF223 Text: MOSPOWER Cross Reference List MOSPOWER Cross Reference List HEWLETT-PACKARD Industry Part No. HPW R-6501 H P W R -6502 H P W R -6503 H P W R -6504 BVd s S Volts rDS(on) (Ohms) Package 450 400 450 400 0.85 0.74 1.0 1.0 T O -3 T O -3 T O -3 T O -3 100 120	OCR Scan	PDF	PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 irf150 VN64GA 2SK134 2SK133 IRF223
triac zd 607 Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.	OCR Scan	PDF	SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
EATON CM20A Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268 Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main	OCR Scan	PDF
MFE9200 Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E Text: MOTOROLA SC XSTRS/R IM E F D \| b3b?254 O O fl'ìB n 1 \| Selection by Package by contacting a Motorola sale office In your area or by con tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com	OCR Scan	PDF	DK101/D. O-22QI 0020-H MFE9200 BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
Mosfet K 135 To3 Abstract: IRF430 432Z til 431 IRF330 IRF331 IRF332 IRF333 IRF431 IRF432 Text: 7 9 6 4 1 4 2 5 / M C M iM fî c c ü r r ' A M n n r ' T n -ñfl DE \| ? ci t i 4 1 4E 0 0 D S 1 B 4 S c 98D ;N e 0 5134 D T ^ J f- N-CHANNEL POWER MOSFETS IRF430/431/432/433 FEATURES • • • • • • • • • Low RDS on at high voltage ' Improved inductive ruggedness	OCR Scan	PDF	cib414E 00DS1B4 IRF430/431/432/433 IRF330 IRF331 IRF332 IRF333 98D05134 IRF430 IRF431 Mosfet K 135 To3 432Z til 431 IRF432

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IRF333 Search Results

IRF333 Price and Stock

Vicor Corporation VI-RF333-EXXX

International Rectifier IRF333

IRF333 Datasheets (25)

IRF333 Datasheets Context Search

irf332

sn76131

IRF470

CMD8

IRF331

IRF331R

WO2M

Untitled

IRF331

Untitled

irf332

1RF330

IRF332

IRF449

irf840

1RF321

VN64GA

irf250

1RF820

irf150

triac zd 607

EATON CM20A

MFE9200

Mosfet K 135 To3