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    IRF6150 Price and Stock

    Infineon Technologies AG IRF6150

    MOSFET 2P-CH 20V 7.9A 16FLIPFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF6150 Reel 4,000
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    • 10000 $1.2075
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    IRF6150 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF6150 International Rectifier HEXFET Power Mosfet Original PDF

    IRF6150 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    9936 mosfet

    Abstract: G1 8645
    Text: IRF6150 PROVISIONAL Bi-Directional MOSFET Outline Dimension NOTES : 1. ALL DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES]. 2. CONTROLLING DIMENSION: [INCH]. 3.124 2X [.123] S1 S1 3. LET TER DES IGNAT ION: S2 S = SOURCE SK = SOURCE KELVIN G = GAT E IS = CURRENT SENSE


    Original     		IRF6150 9936 mosfet G1 8645 PDF

    Bi-Directional P-Channel mosfet

    Abstract: HEXFET Power MOSFET P-Channel 20V P-Channel Power MOSFET IRF P CHANNEL MOSFET mosfet p channel irf IRF6150 Bi-Directional P-Channel HEXFET Power MOSFET HEXFET SO-8 MOSFET SO-8
    Text: OBSOLETE PD - 93943 IRF6150 HEXFET Power MOSFET l l l l l Ultra Low RSS on per Footprint Area Low Thermal Resistance Bi-Directional P-Channel Switch Super Low Profile (<.8mm) Available Tested on Tape & Reel VSS -20V RSS(on) max IS 0.036Ω@VGS1,2 = -4.5V -7.9A


    Original     		IRF6150 Bi-Directional P-Channel mosfet HEXFET Power MOSFET P-Channel 20V P-Channel Power MOSFET IRF P CHANNEL MOSFET mosfet p channel irf IRF6150 Bi-Directional P-Channel HEXFET Power MOSFET HEXFET SO-8 MOSFET SO-8 PDF

    IRF6150

    Abstract: IR 30 S2
    Text: PD - 93943 PROVISIONAL IRF6150 HEXFET Power MOSFET l l l l l Ultra Low RSS on per Footprint Area Low Thermal Resistance Bi-Directional P-Channel Switch Super Low Profile (<.8mm) Available Tested on Tape & Reel VSS -20V RSS(on) max IS 0.036Ω@VGS1,2 = -4.5V -7.9A


    Original     		IRF6150 IRF6150 IR 30 S2 PDF

    PCB design for very fine pitch csp package

    Abstract: gold embrittlement joint IRF6100 IRF6150 with or without underfill process of mosfet
    Text: FlipFETTM MOSFET Design for High Volume SMT Assembly Hazel Schofield, Tim Sammon, Aram Arzumanyan, Dan Kinzer. International Rectifier Introduction & Summary International Rectifier has used a proprietary technique to position all the terminals of a HEXFET device on the same face of the die. This has enabled the development of wafer scale


    Original     		ISBN0-442-00260-2 ISPSD-99, PCB design for very fine pitch csp package gold embrittlement joint IRF6100 IRF6150 with or without underfill process of mosfet PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx PDF

    1N4733

    Abstract: 1N914 DS2760 IRF6150
    Text: Application Note 143 Multiple Battery Pack Applications Using The DS2760 www.maxim-ic.com INTRODUCTION One of the advantages of the DS27xx series of integrated Li-Ion protection products, and in particular the DS2760, is the capability to monitor and control battery power delivery within multi-battery systems.


    Original     		DS2760 DS27xx DS2760, DS2760 PD122100 PD122100 IRF6150 1683mils 1N4733 1N914 IRF6150 PDF

    PCB design for very fine pitch csp package

    Abstract: IRF6100 IRF6150
    Text: A New Generation of Wafer Level Packaged HEXFET  Devices by Tim Sammon, Hazel Schofield, Aram Arzumanyan, & Dan Kinzer, International Rectifier As presented at PCIM Europe 2000 Introduction & Summary International Rectifier has used a proprietary technique to position all the terminals of a HEXFET


    Original     		ISPSD-99, PCB design for very fine pitch csp package IRF6100 IRF6150 PDF

    advantages of 1N4733

    Abstract: 1N4733 1N914 DS2760 IRF6150
    Text: Application Note 143 Multiple Battery Pack Applications Using The DS2760 www.maxim-ic.com INTRODUCTION One of the advantages of the DS27xx series of integrated Li-Ion protection products, and in particular the DS2760, is the capability to monitor and control battery power delivery within multi-battery systems.


    Original     		DS2760 DS27xx DS2760, DS2760 PD122100 PD122100 IRF6150 1683mils advantages of 1N4733 1N4733 1N914 IRF6150 PDF

    CSP battery

    Abstract: DS2760 IRF6150 phone battery circuit
    Text: Chip Scale Packaging Technology Increases Cell Phone Talk Time Kenneth Dierberger International Rectifier Inc. El Segundo, CA Two main objectives in the design of a cell phone are minimizing size and maximizing talk/standby time. To achieve this the lithium-ion battery, with it’s high energy density


    Original     		PDF