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    IRF740B Search Results

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    IRF740B Price and Stock

    Vishay Siliconix IRF740BPBF

    MOSFET N-CH 400V 10A TO220AB
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    DigiKey IRF740BPBF Tube 826 1
    • 1 $2.03
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    RS IRF740BPBF Bulk 1,000
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    onsemi IRF740B

    MOSFET N-CH 400V 10A TO220-3
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    DigiKey IRF740B Tube
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    Vishay Intertechnologies IRF740BPBF

    N-CHANNEL 400V - Tape and Reel (Alt: IRF740BPBF)
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    Avnet Americas IRF740BPBF Reel 1,000 1,000
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    Verical IRF740BPBF 964 11
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    Arrow Electronics IRF740BPBF 964 8 Weeks 1
    • 1 $0.4033
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    Newark IRF740BPBF Bulk 36 1
    • 1 $0.729
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    • 1000 $0.617
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    TTI IRF740BPBF Tube 1,000
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    • 10000 $0.54
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    TME IRF740BPBF 228 1
    • 1 $1.09
    • 10 $0.99
    • 100 $0.87
    • 1000 $0.73
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    Fairchild Semiconductor Corporation IRF740B

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    Bristol Electronics IRF740B 9
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    Quest Components IRF740B 7
    • 1 $1.4
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    ComSIT USA IRF740B 54
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    Intersil Corporation IRF740BD

    10A, 400V, 0.550 OHM, N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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    ComSIT USA IRF740BD 16
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    IRF740B Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF740B Fairchild Semiconductor 400V N-Channel MOSFET Original PDF
    IRF740B Fairchild Semiconductor 400 V N-Channel MOSFET Original PDF
    IRF740BPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 10A TO-220AB Original PDF

    IRF740B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF740BPBF

    Abstract: irf740b
    Text: IRF740B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original     		PDF IRF740B O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF740BPBF irf740b

    Untitled

    Abstract: No abstract text available
    Text: IRF740B/IRFS740B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRF740B/IRFS740B

    Untitled

    Abstract: No abstract text available
    Text: IRF740B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original     		PDF IRF740B O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRF740B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original     		PDF IRF740B O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    irf740b

    Abstract: No abstract text available
    Text: IRF740B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original     		PDF IRF740B O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irf740b

    irf740b

    Abstract: IRFS740B
    Text: IRF740B/IRFS740B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRF740B/IRFS740B O-220ner irf740b IRFS740B

    Untitled

    Abstract: No abstract text available
    Text: IRF740B_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in PSpice,


    Original     		PDF AN609, 2309m 4853m 4152m 6931m 26-May-15

    irf 940

    Abstract: IRF740B IRFS740B
    Text: IRF740B/IRFS740B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRF740B/IRFS740B O-220ner irf 940 IRF740B IRFS740B

    IRF740B

    Abstract: No abstract text available
    Text: IRF740B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		PDF IRF740B O-22ner IRF740B

    Untitled

    Abstract: No abstract text available
    Text: IRF740B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original     		PDF IRF740B O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRF740BPBF

    Abstract: mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . AND TEC I INNOVAT O L OGY D Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 MOSFETs - Increased Switching Speed High-Performance 400 V, 500 V, and 600 V MOSFETs Feature “Stripe” vs. “Cellular” Geometry Technology


    Original     		PDF O-220 O-251) O-220FP O-247AC IRF740BPBF mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    FQP630

    Abstract: FQP27N25 FQP55N10 IRF630B FQP630 equivalent SFP9634 irf640b FDP6035L IRF620B SSP7N60A
    Text: Discrete MOSFET TO-220 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-220 N-Channel ISL9N302AP3 30 Single 0.0025 0.0033 - - 110 75 345 FDP8030L 30 Single 0.0035 0.0045


    Original     		PDF O-220 O-220 ISL9N302AP3 FDP8030L ISL9N303AP3 FDP7045L ISL9N304AP3 FDP6676 FDP6670AL SFP9Z24 FQP630 FQP27N25 FQP55N10 IRF630B FQP630 equivalent SFP9634 irf640b FDP6035L IRF620B SSP7N60A

    Untitled

    Abstract: No abstract text available
    Text: COMPONENTS FOR THE INTERNET OF THINGS Touching the Human Body In the Home VISHAY and the INTERNET of THINGS IoT Vishay has stepped up to the challenges of the Internet of Things (IoT) with a broad portfolio of unique passive and active solutions. These best-in-class components are optimally suited for the “Things” being


    Original     		PDF VMN-MS6975-1502

    sss4n60a

    Abstract: IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china
    Text: B-FET Line Card Fairchild Power MOSFETs B-FET Line Card Overview Fairchild has developed a new range of 200V~600V MOSFETs, called B-FETs, using Fairchild’s proprietary, planar, DMOS technology. This advanced technology is especially tailored for minimizing on-state resistance, providing superior switching performance, and withstanding a high


    Original     		PDF IRF830A IRF830B Power247TM, sss4n60a IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    FQPf10N60C

    Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
    Text: Discrete BGA BVDSS Min. V Config. 20 RDS(ON) Max (Ω) @ VGS = 10V 4.5V 2.5V 1.8V Qg Typ. (nC) @VGS = 5V Single – 0.027 0.039 – 7 6 1.7 20 Single – 0.018 0.03 – 11 7.5 1.6 FDZ201N 20 Single – 0.018 0.03 – 11 9 2 FDZ209N 60 Single – 0.08@5V


    Original     		PDF FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N SFF9140 FQAF47P06 SSF10N60B SSF7N60B FQPf10N60C FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08

    DAP02ALSZ

    Abstract: fan7320 FAN7320b DAP02A LTA504SG FTBVP5SH50 dap02AL FSQ210 FODB103 FQP9N50C
    Text: Fairchild Disc. P/N 2SC3503FSTU 3885_BC637 6285_BC560C 74LVT16244MTD 74LVT16244MTDX 74LVT16245MTD 74LVT16245MTDX 74LVTH162245MTD 74LVTH162245MTX 74LVTH16244MTD 74LVTH16244MTDX 74LVTH16245MTD 74LVTH16245MTDX 74LVTH16373MTD 74LVTH16373MTDX 74LVTH16374MTD 74LVTH16374MTDX


    Original     		PDF 2SC3503FSTU BC637 BC560C 74LVT16244MTD 74LVT16244MTDX 74LVT16245MTD 74LVT16245MTDX 74LVTH162245MTD 74LVTH162245MTX 74LVTH16244MTD DAP02ALSZ fan7320 FAN7320b DAP02A LTA504SG FTBVP5SH50 dap02AL FSQ210 FODB103 FQP9N50C