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    IRFF223 Price and Stock

    Rochester Electronics LLC IRFF223

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFF223 Bulk 260
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.15
    • 10000 $1.15
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    New Jersey Semiconductor Products, Inc. IRFF223

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFF223 350 1
    • 1 $19.2
    • 10 $19.2
    • 100 $16.9843
    • 1000 $15.744
    • 10000 $15.744
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    New Jersey Semiconductor Products Inc IRFF223

    TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,3A I(D),TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFF223 280
    • 1 $20.8
    • 10 $20.8
    • 100 $20.8
    • 1000 $17.6
    • 10000 $17.6
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    International Rectifier IRFF223

    TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,3A I(D),TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFF223 53
    • 1 $1.8598
    • 10 $1.8598
    • 100 $1.1159
    • 1000 $1.1159
    • 10000 $1.1159
    		Buy Now
    Rochester Electronics IRFF223 175 1
    • 1 $1.11
    • 10 $1.11
    • 100 $1.04
    • 1000 $0.9435
    • 10000 $0.9435
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    RCA IRFF223

    TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,3A I(D),TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFF223 25
    • 1 $1.8598
    • 10 $1.711
    • 100 $1.4878
    • 1000 $1.4878
    • 10000 $1.4878
    		Buy Now
    Find more IRFF223 price and stock on Findchips.com

    IRFF223 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFF223 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFF223 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF223 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRFF223 International Rectifier N-Channel Power MOSFET in a TO-39 Package, 200 Volts, 0.8 Ohm Scan PDF
    IRFF223 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF
    IRFF223 Motorola European Master Selection Guide 1986 Scan PDF
    IRFF223 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFF223 Unknown FET Data Book Scan PDF
    IRFF223 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF223 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFF223 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    IRFF223R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF223R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFF223R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFF223 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFF223

    Abstract: No abstract text available
    Text: IRFF220, IRFF221, IRFF222, IRFF223 S E M I C O N D U C T O R 3.0A and 3.5A, 150V to 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.0A and 3.5A, 150V to 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRFF220, IRFF221, IRFF222, IRFF223 TA9600. IRFF223

    Untitled

    Abstract: No abstract text available
    Text: w vys S IRFF220, IRFF221, IRFF222, IRFF223 S e m ico n d ucto r y y 3.0A and 3.5A, 150V to 200V, 0.8 and 1.2 Ohm, N-Channei Power MOSFETs January 1998 Features Description • 3.0A and 3.5A, 150V to 200V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFF220, IRFF221, IRFF222, IRFF223

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information IRFF220 IRFF223 Sm all-Signal Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS N-CHANNEL TM O S PO W ER FET s rDS on| = 0.8 OHM 200 V O LT S . . . d esig ne d fo r lo w volta g e , h ig h speed p o w e r sw itch in g


    OCR Scan     		PDF IRFF220 IRFF223

    IRFF223

    Abstract: IRFF222 IRFF220 IRFF221
    Text: -Standard Power MOSFETs File Number IRFF220, IRFF221, IRFF222, IRFF223 1889 N-Channel Enhancement-Mode Power Field-Effect Transistors 3.0A and 3.5A, 150V - 200V rDS oni = 0.80 and 1.20 N-CHANNEL ENHANCEMENT MODE o Features: • m


    OCR Scan     		PDF IRFF220, IRFF221, IRFF222, IRFF223 1RFF221, IRFF222 IRFF223 IRFF220 IRFF221

    FF220

    Abstract: No abstract text available
    Text: h a r r is IRFF220, IRFF221, IRFF222, IRFF223 3.0A and 3.5A, 150V to 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.0A and 3.5A, 150V to 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRFF220, IRFF221, IRFF222, IRFF223 TA9600. RFF220, RFF221, RFF222, RFF223 FF220

    IRFF221R

    Abstract: IBFF220R IRFF220R IRFF222R IRFF223R 08c1 HI POWER 30A MOSFET
    Text: Rugged Power MOSFETs File N u m b e r 2026 IRFF220R, IRFF221R, IRFF222R, IRFF223R Avalanche Energy Rated N-Channel Power MOSFETs 3.0A and 3.5A, 150V-200V rDs on = 0.8 0 and 1.20 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRFF220R, IRFF221R, IRFF222R, IRFF223R 50V-200V IRFF222R IRFF223R 92CS-42660 IRFF221R IBFF220R IRFF220R 08c1 HI POWER 30A MOSFET

    2N6788 motorola

    Abstract: vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111
    Text: FIELD-EFFECT TRANSISTORS continued Small-Signal TMOS TMOS Power MOSFETs Pow er M O SFETS, M o to ro la tra d e m a rk T M O S , a re FET transistors with an oxide insulated gate which controls vertical c u rren t flow. This basic description fits a n um ber of structures and process titles


    OCR Scan     		PDF IRFF431 IRFF432 IRFF433 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6788 motorola vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111

    IRF09120

    Abstract: 251G FF323 IRFF310 F9122 IRFF130 IRF0120
    Text: - f M % tt ± $ H V ds or € Vg s T a = 2 5 l3 Id Po a Vgs th ) I dss I gs s m tf ï & ï Ds(on) Vd s = ’l ï (V) * /CH * /CH (A) (W) (nA) Vgs (V) C m A) V ds (V) m in max (V) (V) I d (on) C is s g fs Coss C rss $1- B m % V g s =0 (max) Id (mA) ♦ typ


    OCR Scan     		PDF IRFF310 O-205AF FF312 FF322 FF323 25RFF230 IRFF231 IRF09120 251G FF323 IRFF310 F9122 IRFF130 IRF0120

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


    OCR Scan     		PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211

    F111

    Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120
    Text: - 258 - f t M t± £ € A£ ft Vd s or i Vd g % V Vg s ( V) & ( T a = 2 5 cC ) Id 1! Idss Igss Pd * /C H * /CH (A ) (W) ( n A) Vg s ( V) ( M A) Vg s Vd s (V ) th ) % Vd s = Vg s min max ( V) ( V) Id ( itA) fa ft Fo s(o n ) (Ta=25^0) I d ( on) g fs C iss


    OCR Scan     		PDF 1RFD9120 IRFD9123 IRF09210 O-205AF IRFF222 1RFF223 T0-205AF 1RFF230 F111 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    transistors BC 557C

    Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
    Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and


    OCR Scan     		PDF

    9358

    Abstract: 2n6797 2N6781 2N6787 2N6795 IRFF111 IRFF113 IRFF121 IRFF123 IRFF130
    Text: XOR HERMETIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER 2bE D IN TERNATI ONAL RECTIFIER • 4ÔS54S2 OOIOSST □ ■ TO-39 Package T-39-Û3 N-CHANNEL Types Iq cont max 0.18 0.18 0.25 0.3 0.3 0.4 0.6 0.6 0.8 TC - 25°C A 8.0 8.0 7.0 6.0 6.0 5.0 3.5 3.5 3.0 'DM


    OCR Scan     		PDF T-39-Ã IRFF131 2N6795 IRFF133 IRFF121 2N6787 IRFF123 IRFF111 2N6781 IRFF113 9358 2n6797 2N6781 2N6795 IRFF111 IRFF113 IRFF121 IRFF123 IRFF130

    IRFF222

    Abstract: IRFF223
    Text: IFUT HELD EFFECT POWER TRANSISTOR IRFF222,223 3 AMPERES 200,150 VOLTS RDS ON = 1 .2 il P relim inary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF IRFF222 00A//usec, IRFF223

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


    OCR Scan     		PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    250M

    Abstract: IRFF220 IRFF221 IRFF222 IRFF223 T4 sm diode PD937
    Text: HE 0 I MaSSMSZ 0GQT37Q Ö | Data Shçet No. PD-9.378E INTERNATIONAL R E C T I F I E R ' 7 -3 Ÿ -O Ÿ INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IOR IRFF220 IRFF221 IM-CHAIMIMEL POWER MOSFETs TQ-39 PACKAGE IRFFSSS IRFFSS3 Features: 200 Volt, 0.8 Ohm HEXFET


    OCR Scan     		PDF G-352 250M IRFF220 IRFF221 IRFF222 IRFF223 T4 sm diode PD937

    IRF8C30

    Abstract: mfe9200 1RFBC40 IRFD110 IRFD123 IRFD9010 IRFD113 IRFAF50 IRFAF52 IRFAG50
    Text: 257 - f M « tt fi ± Vd s or € t Vd g h V £ fë (Ta=25t3) Vg s (V) Id 1GSS Pt> * /CH * /CH (A) (W) (nA) V g s th) 1DSS Vg s (V) (MA) Vd s (V) (V) (V) ft m m '14 (Ta=25°C) Ciss Vd s = Vg s Id (mA) Coss Crss ft Vg s -O (max) *typ V g s ( 0 ) (V) Id (A)


    OCR Scan     		PDF IRFAF50 O-204AA IRFAF52 1RFAG40 RFF230 O-205AF IRFF231 T0-205AF IRFF232 IRF8C30 mfe9200 1RFBC40 IRFD110 IRFD123 IRFD9010 IRFD113 IRFAG50

    IRFD110

    Abstract: IRF5134 IRF120 IRF540 1RF542 IRF510 IRF522 IRF611-3 IRFD1Z3 IRF143
    Text: _ THOnSON/ D I S TRIBUTOR 5fiE D • 105^573 0005705 35k ■ TCSK P o w er M O S FE T s IR F -S e rie s P o w e r M O S FE T s — N -C h a n n e l Package Maximum Ratings BV q s s V IDS (A) 'DS(O N) OHMS 60 0.40 0.50 0.80 1 1.1 1.3 3 3.50 3.50 4 5


    OCR Scan     		PDF O-247 O-204 O-205 O-220 IRFD113 IRFD111 IRFD123 IRFD121 IRFF113 IRFF111 IRFD110 IRF5134 IRF120 IRF540 1RF542 IRF510 IRF522 IRF611-3 IRFD1Z3 IRF143

    IRF8C30

    Abstract: MFE9200 1RFBC40 1RFZ40 IRFD9010 IRFZ30 IRFAF50 IRFAF52 IRFAG50 IRFBC32
    Text: 257 - f M « tt fi ± £ Vd s or € t h fë Ta=25t3 Vg s * /CH Vd g (V) Id (V) (A) m m 1GSS Pt> V g s th) 1DSS (nA) (W) (MA) Vd s (V) (V) (V) '14 (Ta=25°C) Ciss Vd s = Vg s * /CH Vg s (V) ft Id (mA) Coss Crss Vg s -O (max) *typ V g s ( 0 ) (V) Id (A) *typ


    OCR Scan     		PDF IRFAF50 O-204AA IRFAF52 1RFAG40 RFZ42 O-220AB IRFZ44 MFE910 IRF8C30 MFE9200 1RFBC40 1RFZ40 IRFD9010 IRFZ30 IRFAG50 IRFBC32

    IRF1401

    Abstract: IRF4311 IRF1501 IRF4431 IRF4411 IRF3411 IRF7431 IRF8331 IRF8411 IRF6221
    Text: C T ’ SiR conix in c o r p o r a te d Industry Standard Commercial MOSFETs Part Number V BR^DSS Id (A rDS(ON) (A) Package Part Number V(BR^[)SS Id (A) rDS(ON) (A) Package IRF1301 100 14 0.18 TO-2G4 IRF432’ 500 4.0 2.0 T0-204 IRF1311 60 14 0.18 T0-204


    OCR Scan     		PDF IRF1301 IRF1311 IRF1321 IRF1331 IRF1401 1RF1411 IRF1421 IRF1431 IRF1501 IRF1511 IRF4311 IRF4431 IRF4411 IRF3411 IRF7431 IRF8331 IRF8411 IRF6221

    Untitled

    Abstract: No abstract text available
    Text: • M3 D5 E7 1 0 0 5 4 15 0 T74 ■ 2 3 H A R R IS HAS IRFF220/221/222/223 IRFF220R/221R/222R/223R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TQ-205AF • 3.0 A a n d 3.5 A , 1 5 0V - 2 0 0V • r D S on = ° - 8 f i an d


    OCR Scan     		PDF IRFF220/221/222/223 IRFF220R/221R/222R/223R TQ-205AF IRFF220, IRFF221, IRFF222, IRFF223 IRFF220R, IRFF221R, IRFF222R,

    IRF510

    Abstract: irf540
    Text: _ THOnSON/ D I S TRIBUTOR 5fiE D • 105^573 0005705 35k ■ TCSK P o w er M O S FE T s IR F -S e rie s P o w e r M O S FE T s — N -C h a n n e l Package Maximum Ratings BV q s s V IDS (A) 'DS(O N) OHMS 60 0.40 0.50 0.80 1 1.1 1.3 3 3.50 3.50 4 5


    OCR Scan     		PDF 4-PIn80 IRFD113 IRFD111 IRFD123 IRFD121 IRFF113 IRFF111 IRF513 IRF511 IRFF123 IRF510 irf540