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    IRFF430 Search Results

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    IRFF430 Price and Stock

    Infineon Technologies AG IRFF430SCX

    - Bulk (Alt: IRFF430SCX)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas IRFF430SCX Bulk 100
    • 1 -
    • 10 -
    • 100 $18.4608
    • 1000 $17.8848
    • 10000 $17.8848
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    Infineon Technologies AG IRFF430

    Single N-Channel 500 V 25 W 29.5 nC Hexfet Transistor Through Hole - TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Future Electronics IRFF430 Tray 120
    • 1 $20.19
    • 10 $19.93
    • 100 $19.23
    • 1000 $19.23
    • 10000 $19.23
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    New Jersey Semiconductor Products, Inc. IRFF430

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFF430 350 1
    • 1 $19.2
    • 10 $19.2
    • 100 $16.9843
    • 1000 $15.744
    • 10000 $15.744
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    New Jersey Semiconductor Products Inc IRFF430

    TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,2.5A I(D),TO-205AF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFF430 280
    • 1 $20.8
    • 10 $20.8
    • 100 $20.8
    • 1000 $17.6
    • 10000 $17.6
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    International Rectifier IRFF430R

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFF430R 4
    • 1 $31.4138
    • 10 $31.4138
    • 100 $31.4138
    • 1000 $31.4138
    • 10000 $31.4138
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    IRFF430 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFF430 International Rectifier HEXFET Transistor Original PDF
    IRFF430 Intersil 2.75A, 500V, 1.500 ?, N-Channel Power MOSFET Original PDF
    IRFF430 Semelab N-Channel Enhancement Mode Power MOSFET Original PDF
    IRFF430 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFF430 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF430 International Rectifier TO-39 Package N-Channel HEXFET Scan PDF
    IRFF430 International Rectifier N-Channel Power MOSFETs in a TO-39 Package 500 Volt, 1.5 Ohm Scan PDF
    IRFF430 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF
    IRFF430 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRFF430 Motorola European Master Selection Guide 1986 Scan PDF
    IRFF430 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF430 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF430 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFF430 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFF430 Unknown FET Data Book Scan PDF
    IRFF430 Siliconix N-Channel Enhancement Mode Transistors Scan PDF
    IRFF430R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF430R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFF430R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFF430 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6802

    Abstract: IRFF430
    Text: 2N6802 IRFF430 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE POWER MOSFET 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. BVDSS ID(cont) RDS(on) 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N6802 IRFF430 O-205AF) 2N6802 IRFF430

    TA17415

    Abstract: IRFF430 TB334
    Text: IRFF430 Data Sheet March 1999 2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET • 2.75A, 500V Formerly developmental type TA17415. Ordering Information IRFF430 PACKAGE TO-205AF 1894.4 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRFF430 TA17415. O-205AF TA17415 IRFF430 TB334

    IRF 725

    Abstract: IRFF430 JANTX2N6802 JANTXV2N6802
    Text: PD -90433C IRFF430 JANTX2N6802 JANTXV2N6802 REF:MIL-PRF-19500/557 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF430 BVDSS 500V RDS(on) 1.5Ω ID 2.5A  The HEXFET technology is the key to International


    Original     		PDF -90433C IRFF430 JANTX2N6802 JANTXV2N6802 MIL-PRF-19500/557 O-205AF) T252-7105 IRF 725 IRFF430 JANTX2N6802 JANTXV2N6802

    MOSFET

    Abstract: 2N6802
    Text: t^ejm.l-donJ.uatot. tPioduati, Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N6802 IRFF430 MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL ENHANCEMENT MODE POWER MOSFET BV DSS D(cont)


    Original     		PDF 2N6802 IRFF430 00A/US 300us, MOSFET 2N6802

    Untitled

    Abstract: No abstract text available
    Text: 2N6802 IRFF430 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE POWER MOSFET 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. BVDSS ID(cont) RDS(on) 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N6802 IRFF430 O-205AF)

    Untitled

    Abstract: No abstract text available
    Text: IRFF430, IRFF431, IRFF432, IRFF433 S E M I C O N D U C T O R 2.25A and 2.75A, 450V to 500V, 1.5 and 2.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.25A and 2.75A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRFF430, IRFF431, IRFF432, IRFF433 TA17415.

    IRFF430

    Abstract: TA17415 TB334
    Text: IRFF430 Data Sheet January 2002 2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET Features • 2.75A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF430 TA17415. IRFF430 TA17415 TB334

    Untitled

    Abstract: No abstract text available
    Text: PD -90433C IRFF430 JANTX2N6802 JANTXV2N6802 REF:MIL-PRF-19500/557 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF430 BVDSS 500V RDS(on) 1.5Ω ID 2.5A  The HEXFET technology is the key to International


    Original     		PDF -90433C IRFF430 JANTX2N6802 JANTXV2N6802 MIL-PRF-19500/557 O-205AF)

    Untitled

    Abstract: No abstract text available
    Text: IRFF430 Data Sheet Title FF4 bt 75A 00V, 00 m, March 1999 2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF430 IRFF430 O-205AF TB334

    Untitled

    Abstract: No abstract text available
    Text: IRFF430 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.


    Original     		PDF IRFF430 O205AF) 11-Oct-02

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original     		PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    IRF 3302

    Abstract: 2sc 1894 IRFF430 IRFF431 IRFF432 IRFF433 irf 430
    Text: -Standard Power MOSFETs File Number IRFF430, IRFF431, IRFF432, IRFF433 1894 N-Channel Enhancement-Mode Power Field-Effect Transistors 2.25A and 2.75A, 450V - 500V rDsioni = 1.50 and 2.00 N-CHANNEL ENHANCEMENT MODE 3 D Features: • SOA is power-dissipation limited


    OCR Scan     		PDF IRFF430, IRFF431, IRFF432, IRFF433 92CS-3374I IRFF432 IRFF433 IRF 3302 2sc 1894 IRFF430 IRFF431 irf 430

    Untitled

    Abstract: No abstract text available
    Text: • 430 5 57 1 0 0 S 4 1Ô D 701 ■ [g HARRIS HAS IRFF430/431/432/433 IRFF430R/431R/432R/433R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 0 5 A F • 2 .2 5 A a n d 2 .7 5 A , 4 5 0 V - 5 0 0 V • rD S o n = and 2 .0 fl


    OCR Scan     		PDF IRFF430/431/432/433 IRFF430R/431R/432R/433R FF430, IRFF431, FF432, FF430R FF431R FF432R FF433R

    SMM70N06

    Abstract: SMM70N05 SMP2P20 SMM60N05 SILICONIX 4800 SMM11P20 IBFF333 IRFF313 SMD10P05L IRFF320
    Text: - 324 - f ft A £ Ta=25‘C Vds Vg s or * Vd g Id t M € *± € * IRFF312 IRFF313 IRFF320 IRFF321 IRFF322 IRFF323 IRFF33Q IRFF331 IRFF332 IRFF333 IRFF430 IRFF431 IRFF432 IRFF433 MOD1QOA/B/C MOD200A/B/C MQD400A/B/C MOD5QOA/B/C SMD10P05 SMD10P05L SMD15NQ5


    OCR Scan     		PDF IRFF31Z IRFF313 IRFF320 2020P10 SMM60N05 T0-204AE SMM70N05 O-204AE SMM70N06 SMM70N10 SMP2P20 SILICONIX 4800 SMM11P20 IBFF333 SMD10P05L

    IRFF430

    Abstract: IRFF431 TD-205A
    Text: Fm? HELD EFFECT POWER TRANSISTOR IRFF430,431 2.75 AMPERES 500, 450 VOLTS RDS ON = 1.5 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF IRFF430 IRFF431 TD-205A

    Untitled

    Abstract: No abstract text available
    Text: i H A R R IRFF430, IRFF431, IRFF432, IRFF433 i s s e m i c o n d u c t o r 2.25A and 2.75A, 450V to 500V, 1.5 and 2.0 Ohm, N-Channel Power MOSFETs July 1998 Description Features 2.25A and 2.75A, 450V and 500V High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFF430, IRFF431, IRFF432, IRFF433 RFF432, RFF433

    IRFF430R

    Abstract: IRFF431R IRFF432R IRFF433R
    Text: Rugged Power MOSFETs File Number 2031 IRFF430R, IRFF431R, IRFF432R, IRFF433R Avalanche Energy Rated N-Channel Power MOSFETs 2.25A and 2.75A, 450V-500V fDs on = 1 .50 and 2.00 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated ■ SO A is power-dissipation lim ited


    OCR Scan     		PDF IRFF430R, IRFF431R, IRFF432R, IRFF433R 50V-500V IRFF432R IRFF433R 92C3-42MO IRFF430R IRFF431R

    DIODE 433

    Abstract: tl 431 R 433 A F433 IRFF430 IRFF431 IRFF432 IRFF433 AC15A
    Text: SILICÔNIX INC IflE D "Silicon_ • ÔHS473S G ü m ô S Î 0 ■ IRFF430/431/432/433 incorporated Xf^ VTSiliconix ¡1 N-Channel Enhancement Mode Transistors TVZPi-D0! TO-2Q5AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BRJDSS "W> Id (A IRFF430 500 1.5 2.75


    OCR Scan     		PDF IRFF430/4317432/433 IRFF430 IRFF431 IRFF432 IRFF433 O-205AF T-39-Ã DIODE 433 tl 431 R 433 A F433 AC15A

    Untitled

    Abstract: No abstract text available
    Text: i h ” a r r i IRFF430, IRFF431, IRFF432, IRFF433 s “ I C O N D U C T O E 2.25A and 2.75A, 450V to 500V, 1.5 and 2.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.25A and 2.75A, 450V and 500V These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFF430, IRFF431, IRFF432, IRFF433 tyF432,

    432r

    Abstract: No abstract text available
    Text: 53 HARRIS IR FF430/431/432/433 IRFF430R/431R/432R/433R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 0 5 A F • 2 .2 5 A and 2 .7 5A , 4 5 0 V - 5 0 0V • rD S on = 1 - 5 0 and 2 .0 fl • Single Pulse A valanche Energy R ated*


    OCR Scan     		PDF FF430/431/432/433 IRFF430R/431R/432R/433R 432r

    TO-254

    Abstract: T0-204 IRF450 equivalent
    Text: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS


    OCR Scan     		PDF 2N6756 2N6758 2N6760 2N6762 2N6764 2N6766 2N6768 2N6770 2N6788 2N6790 TO-254 T0-204 IRF450 equivalent

    2N6788 motorola

    Abstract: vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111
    Text: FIELD-EFFECT TRANSISTORS continued Small-Signal TMOS TMOS Power MOSFETs Pow er M O SFETS, M o to ro la tra d e m a rk T M O S , a re FET transistors with an oxide insulated gate which controls vertical c u rren t flow. This basic description fits a n um ber of structures and process titles


    OCR Scan     		PDF IRFF431 IRFF432 IRFF433 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6788 motorola vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111

    Untitled

    Abstract: No abstract text available
    Text: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical


    OCR Scan     		PDF

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845