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    Infineon Technologies AG IRFH8316PBF

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    Ameya Holding Limited IRFH8316PBF 9,115
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    IRFH8316PBF Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: IRFH8316PbF HEXFET Power MOSFET VDS 30 ± 20 Vgs max RDS on max V V 2.95 (@VGS = 10V) (@VGS = 4.5V) 4.30 Qg typ 30.0 ID 50 (@Tc(Bottom) = 25°C) m nC i PQFN 5X6 mm A Applications •Synchronous MOSFET for high frequency buck converters Features and Benefits


    Original     		PDF IRFH8316PbF IRFH8316TRPBF IRFH8316TR2PBF 796mH,

    Untitled

    Abstract: No abstract text available
    Text: IRFH8316PbF HEXFET Power MOSFET VDS 30 ± 20 Vgs max RDS on max V V 2.95 (@VGS = 10V) (@VGS = 4.5V) 4.30 Qg typ 30.0 ID (@Tc(Bottom) = 25°C) 50 mΩ nC i PQFN 5X6 mm A Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits


    Original     		PDF IRFH8316PbF IRFH8316TRPBF IRFH8316TR2PBF

    Untitled

    Abstract: No abstract text available
    Text: IRFH8316PbF HEXFET Power MOSFET VDS 30 ± 20 Vgs max RDS on max V V 2.95 (@VGS = 10V) (@VGS = 4.5V) 4.30 Qg typ 30.0 ID 50 (@Tc(Bottom) = 25°C) m nC i PQFN 5X6 mm A Applications •Synchronous MOSFET for high frequency buck converters Features and Benefits


    Original     		PDF IRFH8316PbF IRFH8316TRPBF IRFH8316TR2PBF 796mH,