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    Infineon Technologies AG IRFHM792TR2PBF

    MOSFET 2N-CH 100V 2.3A 8PQFN
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    DigiKey IRFHM792TR2PBF Digi-Reel 1
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    IRFHM792TR2PBF Cut Tape 1
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    International Rectifier IRFHM792TR2PBF

    HEXFET POWER MOSFET Power Field-Effect Transistor, 2.3A I(D), 100V, 0.195ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA IRFHM792TR2PBF 550
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    IRFHM792TR2PBF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFHM792TR2PBF International Rectifier FETs - Arrays, Discrete Semiconductor Products, MOSFET N CH DUAL 100V 2.3A 8PQFN Original PDF

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    IRFHM792TRPBF

    Abstract: IRFHM792
    Text: PD - 96368A IRFHM792TRPbF IRFHM792TR2PbF VDS Vgs max RDS on max (@VGS = 10V) Qg typ 100 V ± 20 V 195 mΩ 4.2 ID 3.4 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET TOP VIEW D 7 D 8 D 6 D 5 S nC h A G S G D D D 1 S 2 G 3 S 4 G D D D PQFN Dual 3.3X3.3 mm Applications


    Original     		PDF 6368A IRFHM792TRPbF IRFHM792TR2PbF IRFHM792TR2PBF IRFHM792

    Untitled

    Abstract: No abstract text available
    Text: PD - 96368A IRFHM792TRPbF IRFHM792TR2PbF VDS Vgs max RDS on max (@VGS = 10V) Qg typ 100 V ± 20 V 195 mΩ 4.2 ID 3.4 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET TOP VIEW D 7 D 8 D 6 D 5 S nC h A G S G D D D 1 S 2 G 3 S 4 G D D D PQFN Dual 3.3X3.3 mm Applications


    Original     		PDF 6368A IRFHM792TRPbF IRFHM792TR2PbF

    Untitled

    Abstract: No abstract text available
    Text: IRFHM792PbF VDS Vgs max RDS on max (@VGS = 10V) Qg typ 100 V ± 20 V 195 mΩ 4.2 ID 3.4 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET TOP VIEW D 8 D 7 D 6 D 5 S nC h A G S G D D D 1 S 2 G 3 S 4 G D D D PQFN Dual 3.3X3.3 mm Applications • DC-DC Primary Switch


    Original     		PDF IRFHM792PbF IRFHM792TRPBÎ