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Vishay Siliconix IRFR320TRPBF MOSFET N-CH 400V 3.1A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFR320TRPBF	Reel	4,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.46413	Buy Now
RS	IRFR320TRPBF	Bulk			10	1 - 10 $0.91 100 $0.86 1000 $0.77 10000 $0.77	Get Quote
Bristol Electronics	IRFR320TRPBF		600			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	IRFR320TRPBF		480			1 $1.672 10 $1.672 100 $0.836 1000 $0.6688 10000 $0.6688	Buy Now
ComSIT USA	IRFR320TRPBF		125			1 - 10 - 100 - 1000 - 10000 -	Get Quote

New Advantage Corporation	IRFR320TRPBF		6,000		1	1 - 10 - 100 - 1000 - 10000 $0.4338	Buy Now
Vishay Siliconix IRFR320PBF MOSFET N-CH 400V 3.1A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFR320PBF	Tube	2,741		1	1 $2.51 10 $1.613 100 $2.51 1000 $0.8152 10000 $0.71625	Buy Now
RS	IRFR320PBF	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.86	Get Quote
Vishay Siliconix IRFR320TRPBF-BE3 N-CHANNEL 400V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFR320TRPBF-BE3	Digi-Reel	1,918		1	1 $2.51 10 $1.613 100 $2.51 1000 $0.8152 10000 $0.8152	Buy Now
	IRFR320TRPBF-BE3	Cut Tape	1,918		1	1 $2.51 10 $1.613 100 $2.51 1000 $0.8152 10000 $0.8152	Buy Now
	IRFR320TRPBF-BE3	Reel			2,000	1 - 10 - 100 - 1000 - 10000 $0.71625	Buy Now
Vishay Siliconix IRFR320 MOSFET N-CH 400V 3.1A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFR320	Tube			3,000	1 - 10 - 100 - 1000 - 10000 $1.7	Buy Now
Bristol Electronics	IRFR320		150			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix IRFR320TR MOSFET N-CH 400V 3.1A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFR320TR	Reel			2,000	1 - 10 - 100 - 1000 - 10000 $1.7	Buy Now

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IRFR320 Datasheets (39)

Part	Manufacturer	Description	Datasheet Type	PDF
IRFR320	Harris Semiconductor	Power MOSFET Product Matrix	Original	PDF
IRFR320	Intersil	3.1A, 400V, 1.800 ?, N-Channel Power MOSFETs	Original	PDF
IRFR320	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRFR320	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 3.1A DPAK	Original	PDF
IRFR320	Fairchild Semiconductor	Advanced Power MOSFET	Scan	PDF
IRFR320	International Rectifier	Surface Mount HEXFETs	Scan	PDF
IRFR320	International Rectifier	HEXFET Power MOSFETs	Scan	PDF
IRFR320	International Rectifier	Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=3.1A)	Scan	PDF
IRFR320	International Rectifier	HEXFET Power MOSFET	Scan	PDF
IRFR320	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 400V, 3.1A, Pkg Style TO-252AA	Scan	PDF
IRFR320	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
IRFR320	Unknown	FET Data Book	Scan	PDF
IRFR320	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFR320	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

IRFR320	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
IRFR3209A	Fairchild Semiconductor	3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs	Original	PDF
IRFR3209A	Fairchild Semiconductor	3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFET	Original	PDF
IRFR3209A	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFR320A	Fairchild Semiconductor	Advanced Power MOSFET	Original	PDF
IRFR320A	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF

IRFR320 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IRFR320PBF Abstract: IRFR320TRL Text: IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR320,SiHFR320) • Straight Lead (IRFU320,SiHFU320)	Original	PDF	IRFR320, IRFU320, SiHFR320 SiHFU320 O-252) IRFR320 IRFU320 2002/95/EC IRFR320PBF IRFR320TRL
inductor 1 mH Abstract: No abstract text available Text: IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 1.8 Available • Repetitive Avalanche Rated • Surface Mount (IRFR320/SiHFR320) 20 Qgs (nC)	Original	PDF	IRFR320, IRFU320, SiHFR320 SiHFU320 IRFR320/SiHFR320) IRFU320/SiHFU320) O-252) O-251) 12-Mar-07 inductor 1 mH
Untitled Abstract: No abstract text available Text: IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR320,SiHFR320) • Straight Lead (IRFU320,SiHFU320)	Original	PDF	IRFR320, IRFU320, SiHFR320 SiHFU320 O-252) IRFR320 IRFU320 2002/95/EC
ifu320 Abstract: ifr320 irfu320 IRFR320 IRFR3209A TA17404 TB334 Text: IRFR320, IRFU320 Data Sheet 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode	Original	PDF	IRFR320, IRFU320 TA17404. ifu320 ifr320 irfu320 IRFR320 IRFR3209A TA17404 TB334
ifu320 Abstract: ifr320 irfu320 TB334 IRFR320 IRFR3209A TA17404 Text: IRFR320, IRFU320 Data Sheet 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode	Original	PDF	IRFR320, IRFU320 TA17404. ifu320 ifr320 irfu320 TB334 IRFR320 IRFR3209A TA17404
IRFR320 Abstract: IRFU320 SiHFR320 SiHFR320-E3 SiHFR320-GE3 SiHFU320 Text: IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR320,SiHFR320) • Straight Lead (IRFU320,SiHFU320)	Original	PDF	IRFR320, IRFU320, SiHFR320 SiHFU320 IRFR320 IRFU320 2002/95/EC O-252) SiHFR320-E3 SiHFR320-GE3
IRFU320PBF Abstract: IRFU120 U120 IRFR320PBF Text: PD-95013A IRFR320PbF IRFU320PbF • Lead-Free 1 IRFR/U320PbF 2 IRFR/U320PbF I-Pak TO-251AA Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: THIS IS AN IRF U120 WIT H ASS EMBLY LOT CODE 5678 ASS EMB LED ON WW 19, 1999	Original	PDF	PD-95013A IRFR320PbF IRFU320PbF IRFR/U320PbF O-251AA) IRFU120 IRFU320PBF IRFU120 U120 IRFR320PBF
TO-252AA Package Abstract: No abstract text available Text: PD - 95013 IRFR320PbF IRFU320PbF • Lead-Free www.irf.com 1 2/13/04 IRFR/IRFU320PbF 2 www.irf.com IRFR/IRFU320PbF www.irf.com 3 IRFR/IRFU320PbF 4 www.irf.com IRFR/IRFU320PbF www.irf.com 5 IRFR/IRFU320PbF 6 www.irf.com IRFR/IRFU320PbF D-Pak TO-252AA Package Outline	Original	PDF	IRFR320PbF IRFU320PbF IRFR/IRFU320PbF O-252AA) IRFU120 TO-252AA Package
irf P-CHANNEL Abstract: EIA-541 IRFR120 IRFU120 U120 IRF gate driver DT marking code DIODE MARKING 541 IRF GATE LOGIC Marking code DV Text: PD-95013A IRFR320PbF IRFU320PbF • Lead-Free www.irf.com 1 12/13/04 IRFR/U320PbF 2 www.irf.com IRFR/U320PbF www.irf.com 3 IRFR/U320PbF 4 www.irf.com IRFR/U320PbF www.irf.com 5 IRFR/U320PbF 6 www.irf.com IRFR/U320PbF Peak Diode Recovery dv/dt Test Circuit	Original	PDF	PD-95013A IRFR320PbF IRFU320PbF IRFR/U320PbF 20PbF irf P-CHANNEL EIA-541 IRFR120 IRFU120 U120 IRF gate driver DT marking code DIODE MARKING 541 IRF GATE LOGIC Marking code DV
Untitled Abstract: No abstract text available Text: $GYDQFHG 3RZHU 026 7 IRFR320 FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 1.8Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 3.1 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V	Original	PDF	IRFR320
Untitled Abstract: No abstract text available Text: IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR320,SiHFR320) • Straight Lead (IRFU320,SiHFU320)	Original	PDF	IRFR320, IRFU320, SiHFR320 SiHFU320 O-252) IRFR320 IRFU320 2002/95/EC
Untitled Abstract: No abstract text available Text: IRFR320, IRFU320, SiHFR320, SiHFU320 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single D DPAK (TO-252)	Original	PDF	IRFR320, IRFU320, SiHFR320 SiHFU320 O-252) O-251) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
Untitled Abstract: No abstract text available Text: IRFR320, IRFU320, SiHFR320, SiHFU320 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) () VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single D Dynamic dV/dt Rating	Original	PDF	IRFR320, IRFU320, SiHFR320 SiHFU320 IRFR320 IRFU320 O-252) 2002/95/EC.
EIA-541 Abstract: IRFR120 IRFU120 U120 IRFR320PBF Text: PD-95013A IRFR320PbF IRFU320PbF • Lead-Free Document Number: 91273 12/13/04 www.vishay.com 1 IRFR/U320PbF Document Number: 91273 www.vishay.com 2 IRFR/U320PbF Document Number: 91273 www.vishay.com 3 IRFR/U320PbF Document Number: 91273 www.vishay.com 4 IRFR/U320PbF	Original	PDF	PD-95013A IRFR320PbF IRFU320PbF IRFR/U320PbF 12-Mar-07 EIA-541 IRFR120 IRFU120 U120 IRFR320PBF

Untitled Abstract: No abstract text available Text: IRFR320 A d van ced Power MOSFET FEATURES BVDSS - ♦ Avalanche Rugged Technology 400 V 1.8Î2 ♦ Rugged Gate Oxide Technology ^D S o n = ♦ Lower Input Capacitance lD = 3.1 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D -P A K ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V	OCR Scan	PDF	IRFR320
IFU320 Abstract: ifr320 fu320 Text: IRFR320, IR FU320 S e m iconductor Data Sheet 3.1 A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a	OCR Scan	PDF	IRFR320, FU320 IRFU320 IFU320 ifr320 fu320
IRFR320 Abstract: 100 W POWER MOSFET Text: IRFR320 A dvanced Power MOSFET FEATURES BVDSS — 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD "I - 8 ^ 3.1 A = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10\|xA (Max.) @ V DS = 400V	OCR Scan	PDF	IRFR320 IRFR320 100 W POWER MOSFET
U321 Abstract: U320 DIODE s31a IRFR321 ui 321 Text: N-CHANNEL POWER MOSFETS IRFR320/321 IRFU320/321 FEATURES D-PAK • Low er R ds < on • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability	OCR Scan	PDF	IRFR320/321 IRFU320/321 IRFR320/U320 IRFR321/U321 IRFU320/321 S-20V Tj-25 U321 U320 DIODE s31a IRFR321 ui 321
ifu320 Abstract: IFR321 ifr320 IRFU320 Text: IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 H A R R IS SEMICONDUCTOR 2.6A and 3.1 A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.6A and 3.1 A, 350V and 400V These are N-Channel enhancement mode silicon gate	OCR Scan	PDF	IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 ifu320 IFR321 ifr320 IRFU320
irfr320 Abstract: U320 DIODE 322 mosfet U322 Text: N-CHANNEL POWER MOSFET IRFR320/322 IRFU320/322 FEATURE • • • • • • • D-PACK Lower R d s ON Improved inductive ruggedess Fast switching time Rugged polysilicon gate cell structure Lower input capacitance Extended sate operating area Improved high temperature reliability	OCR Scan	PDF	IRFR320/322 IRFU320/322 IRFR320/322 IRFR320/U320 IRFR322/U322 irfr320 U320 DIODE 322 mosfet U322
Untitled Abstract: No abstract text available Text: P *3 3 S IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 2.6A and 3.1 A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 2.6A and 3.1 A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate	OCR Scan	PDF	IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 RFR322,
Untitled Abstract: No abstract text available Text: IRFR320 Advanced Power MOSFET FEATURES B ^dss - 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD "I 3.1 A = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10\|iA (Max.) @ V DS = 400V	OCR Scan	PDF	IRFR320
IRFR320 Abstract: marking 33a irfu320 AN-994 1RFR32Q Text: PD-9.598A International IrâR Rectifier IRFR320 IRFU320 HEXFET P ow er M O S FE T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR320 Straight Lead (IRFU320) Available in Tape & Reel Fast Switching Ease of Paralleling	OCR Scan	PDF	IRFR320 IRFR320) IRFU320) IRFR320 marking 33a irfu320 AN-994 1RFR32Q
Untitled Abstract: No abstract text available Text: MÔSSMS5 OOlSbTM Abb International S ii Rectifier PD-9.598A IRFR320 IRFU320 HEXFET Power M O SFET • • • • • • • IINR INTERNATIONAL R E C T I F I E R Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR320 Straight Lead (IRFU320)	OCR Scan	PDF	IRFR320 IRFU320 IRFR320) IRFU320) 50Kii

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IRFR320 Datasheets (39)

IRFR320 Datasheets Context Search

IRFR320PBF

inductor 1 mH

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ifu320

ifu320

IRFR320

IRFU320PBF

TO-252AA Package

irf P-CHANNEL

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EIA-541

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IFU320

IRFR320

U321

ifu320

irfr320

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IRFR320

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