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    IRG4BC20S Search Results

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    IRG4BC20S Price and Stock

    Infineon Technologies AG IRG4BC20S

    IGBT 600V 19A 60W TO220AB
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    DigiKey IRG4BC20S Tube 300
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    Infineon Technologies AG IRG4BC20SD

    IGBT 600V 19A 60W TO220AB
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    DigiKey IRG4BC20SD Tube 200
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    Infineon Technologies AG IRG4BC20SPBF

    IGBT 600V 19A TO220AB
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    DigiKey IRG4BC20SPBF Tube
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    RS IRG4BC20SPBF Bulk 600
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    Infineon Technologies AG IRG4BC20SD-S

    IGBT 600V 19A 60W D2PAK
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    DigiKey IRG4BC20SD-S Tube 50
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    Infineon Technologies AG IRG4BC20SDPBF

    IGBT 600V 19A 60W TO220AB
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    DigiKey IRG4BC20SDPBF Tube
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    Rochester Electronics IRG4BC20SDPBF 13 1
    • 1 $2.36
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    EBV Elektronik IRG4BC20SDPBF 19 Weeks 1,000
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    IRG4BC20S Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG4BC20S International Rectifier Standard Speed IGBT Original PDF
    IRG4BC20S International Rectifier Insulated Gate Bipolar Transistor Original PDF
    IRG4BC20S International Rectifier 600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package; A IRG4BC20S with Standard Packaging Original PDF
    IRG4BC20SD International Rectifier 600V DC-1 kHz (Standard) Copack IGBT in a TO-220AB package; A IRG4BC20SD with Standard Packaging Original PDF
    IRG4BC20SD International Rectifier Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode Original PDF
    IRG4BC20SDPBF International Rectifier 600V DC-1 kHz (Standard) Copack IGBT in a TO-220AB package; Similar to IRG4BC20SD with Lead Free Packaging Original PDF
    IRG4BC20SDPbF International Rectifier TRANS IGBT CHIP N-CH 600V 19A 3TO-220AB Original PDF
    IRG4BC20SDS International Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, Original PDF
    IRG4BC20SD-S International Rectifier 600V DC-1 kHz (Standard) Copack IGBT in a D2-Pak package; A IRG4BC20SD-S with Standard Packaging Original PDF
    IRG4BC20SD-S International Rectifier Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode Original PDF
    IRG4BC20SD-SPBF International Rectifier 600V DC-1 kHz (Standard) Copack IGBT in a D2-Pak package; Similar to IRG4BC20SD-S with Lead Free Packaging Original PDF
    IRG4BC20SD-SPBF International Rectifier Original PDF
    IRG4BC20SPBF International Rectifier Original PDF
    IRG4BC20SPBF International Rectifier 600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package; Similar to IRG4BC20S with Lead Free Packaging Original PDF

    IRG4BC20S Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRG4BC20S

    Abstract: 0V39
    Text: PD - 91597A IRG4BC20S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original
    1597A IRG4BC20S O-220AB O-220AB VG252-7105 IRG4BC20S 0V39 PDF

    AN-994

    Abstract: IRG4BC20SD-S
    Text: PD -91794 IRG4BC20SD-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4


    Original
    IRG4BC20SD-S AN-994 IRG4BC20SD-S PDF

    AN-994

    Abstract: IRG4BC20SD-S irg4bc
    Text: PD -91794 IRG4BC20SD-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4


    Original
    IRG4BC20SD-S AN-994 IRG4BC20SD-S irg4bc PDF

    Untitled

    Abstract: No abstract text available
    Text: PD- 91793 IRG4BC20SD Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4


    Original
    IRG4BC20SD O-220AB PDF

    f1010

    Abstract: No abstract text available
    Text: PD - 94939 IRG4BC20SDPbF • Lead-Free www.irf.com 1 1/13/04 IRG4BC20SDPbF 2 www.irf.com IRG4BC20SDPbF www.irf.com 3 IRG4BC20SDPbF 4 www.irf.com IRG4BC20SDPbF www.irf.com 5 IRG4BC20SDPbF 6 www.irf.com IRG4BC20SDPbF www.irf.com 7 IRG4BC20SDPbF 8 www.irf.com


    Original
    IRG4BC20SDPbF f1010 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD -95691A IRG4BC20SD-SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4


    Original
    -95691A IRG4BC20SD-SPbF EIA-418. PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95639 IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original
    IRG4BC20SPbF O-220AB O-220AB O-220AB. PDF

    IRG4BC20SD

    Abstract: No abstract text available
    Text: PD- 91793 IRG4BC20SD Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4


    Original
    IRG4BC20SD O-220AB IRG4BC20SD PDF

    IRG4BC20SD

    Abstract: No abstract text available
    Text: PD- 91793 IRG4BC20SD Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4


    Original
    IRG4BC20SD O-220AB IRG4BC20SD PDF

    MOSFET 40A 600V

    Abstract: inverter circuit 200v to 100v mosfet 600V 10A ic
    Text: PD - 94939A IRG4BC20SDPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4


    Original
    4939A IRG4BC20SDPbF O-220AB MOSFET 40A 600V inverter circuit 200v to 100v mosfet 600V 10A ic PDF

    TO-220AB transistor package

    Abstract: No abstract text available
    Text: PD - 95639 IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original
    IRG4BC20SPbF O-220AB O-220AB O-220AB. TO-220AB transistor package PDF

    D2Pak Package dimensions

    Abstract: No abstract text available
    Text: PD - 95691 IRG4BC20SD-SPbF • Lead-Free www.irf.com 8/31/04 IRG4BC20SD-SPbF 2 www.irf.com IRG4BC20SD-SPbF www.irf.com 3 IRG4BC20SD-SPbF 4 www.irf.com IRG4BC20SD-SPbF www.irf.com 5 IRG4BC20SD-SPbF 6 www.irf.com IRG4BC20SD-SPbF www.irf.com 7 IRG4BC20SD-SPbF


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    IRG4BC20SD-SPbF D2Pak Package dimensions PDF

    IRG4BC20S

    Abstract: IRG4BC20
    Text: PD - 91597A IRG4BC20S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original
    1597A IRG4BC20S O-220AB O-220AB IRG4BC20S IRG4BC20 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95639A IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original
    5639A IRG4BC20SPbF O-220AB O-220AB I4BC20SPbF PDF

    Untitled

    Abstract: No abstract text available
    Text: PD -91794 IRG4BC20SD-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4


    Original
    IRG4BC20SD-S PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 91597A IRG4BC20S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original
    1597A IRG4BC20S O-220AB O-220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94939A IRG4BC20SDPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4


    Original
    4939A IRG4BC20SDPbF O-220AB PDF

    IRG4BC20S

    Abstract: RIA 39 transistor
    Text: PD - 9.1597 IRG4BC20S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original
    IRG4BC20S O-220AB O-220AB IRG4BC20S RIA 39 transistor PDF

    AN-994

    Abstract: No abstract text available
    Text: PD -95691A IRG4BC20SD-SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4


    Original
    -95691A IRG4BC20SD-SPbF diodes57) EIA-418. AN-994 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95639A IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original
    5639A IRG4BC20SPbF O-220AB O-220AB PDF

    K02A

    Abstract: 0int
    Text: PD - 95691 IRG4BC20SD-SPbF • Lead-Free www.irf.com 8/31/04 IRG4BC20SD-SPbF 2 www.irf.com IRG4BC20SD-SPbF www.irf.com 3 IRG4BC20SD-SPbF 4 www.irf.com IRG4BC20SD-SPbF www.irf.com 5 IRG4BC20SD-SPbF 6 www.irf.com IRG4BC20SD-SPbF www.irf.com 7 IRG4BC20SD-SPbF


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    IRG4BC20SD-SPbF K02A 0int PDF

    IRG4PC30S

    Abstract: igbt 20A 1200v IRG4BC20 IRG4PC40W IRGS14 IRGS14C40L 100C IRG4BC20W IRG4BC30W IRG4BC30W-S
    Text: International Rectifier EXISTING Products The IR IGBT Navigator NEW UPCOMING Products Products released to to be released within production in last 6next 3-4 months 9 months POTENTIAL Products no current plans. see bus.mgmt. Effective 15 June 2000 Voltage


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    O-220 Pak/TO-262 O-220 O-247 Super247 IRGP20B120UD-E IRG4BC40K IRG4PC30K IRG4PC40K IRG4PC50K IRG4PC30S igbt 20A 1200v IRG4BC20 IRG4PC40W IRGS14 IRGS14C40L 100C IRG4BC20W IRG4BC30W IRG4BC30W-S PDF

    Untitled

    Abstract: No abstract text available
    Text: P D - 9. 1597 International IOR Rectifier IRG4BC20S P R E L IM IN A R Y Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter


    OCR Scan
    IRG4BC20S O-220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: International I R Rectifier PD - 9 .1 5 9 7 IRG4BC20S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLARTRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter


    OCR Scan
    IRG4BC20S O-22QAB PDF