IRL630 Search Results

IRL630 Price and Stock

Filter by Manufacturer


Vishay Siliconix IRL630SPBF MOSFET N-CH 200V 9A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRL630SPBF	Tube	8,811		1	1 $3.35 10 $3.35 100 $3.35 1000 $1.14098 10000 $1.0625	Buy Now
Quest Components	IRL630SPBF		28			1 $1.75 10 $1.61 100 $1.4 1000 $1.4 10000 $1.4	Buy Now
Vishay Siliconix IRL630PBF-BE3 MOSFET N-CH 200V 9A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRL630PBF-BE3	Tube	1,000		1	1 $3.08 10 $3.08 100 $3.08 1000 $1.03553 10000 $1.03553	Buy Now
Vishay Siliconix IRL630PBF MOSFET N-CH 200V 9A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRL630PBF	Tube	527		1	1 $3.08 10 $3.08 100 $3.08 1000 $1.12004 10000 $1.12004	Buy Now
Vishay Siliconix IRL630 MOSFET N-CH 200V 9A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRL630	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi IRL630A MOSFET N-CH 200V 9A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRL630A	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

Find more IRL630 price and stock on Findchips.com

IRL630 Datasheets (33)

Part	Manufacturer	Description	Datasheet Type	PDF
IRL630	International Rectifier	HEXFET Power Mosfet	Original	PDF
IRL630	International Rectifier	HEXFET Power MOSFET	Original	PDF
IRL630	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRL630	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 9A TO-220AB	Original	PDF
IRL630	Fairchild Semiconductor	Advanced Power MOSFET	Scan	PDF
IRL630	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Logic Level, 200V, 9A, Pkg Style TO-220AB	Scan	PDF
IRL630	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRL630	Unknown	FET Data Book	Scan	PDF
IRL630	Samsung Electronics	N-Channel Logic Level MOSFETS	Scan	PDF
IRL630A	Fairchild Semiconductor	Advanced Power MOSFET	Original	PDF
IRL630A	Fairchild Semiconductor	Advanced Power MOSFET	Scan	PDF
IRL630A_NL	Fairchild Semiconductor	200V N-Channel Logic Level A-FET / Substitute of IRL630	Original	PDF
IRL630L	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRL630PBF	International Rectifier	HEXFET Power MOSFET	Original	PDF

IRL630PBF	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 9A TO-220AB	Original	PDF
IRL630PBF-BE3	Vishay Siliconix	MOSFET N-CH 200V 9A TO220AB	Original	PDF
IRL630S	International Rectifier	HEXFET Power MOSFET	Original	PDF
IRL630S	International Rectifier	HEXFET Power Mosfet	Original	PDF
IRL630S	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRL630S	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 9A D2PAK	Original	PDF

IRL630 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: IRL630S, SiHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive	Original	PDF	IRL630S, SiHL630S 2002/95/EC O-263) 11-Mar-11
Untitled Abstract: No abstract text available Text: IRL630S_RC, SiHL630S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	IRL630S SiHL630S AN609, 1561m 1405m 7558m 9961m 8166m
Untitled Abstract: No abstract text available Text: PD -9.1255 IRL630 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS ON Specified at V GS = 4V & 5V 150°C Operating Temperature Fast Switching Ease of paralleling VDSS = 200V RDS(on) = 0.40 Ω ID = 9.0A Description	Original	PDF	IRL630 O-220 08-Mar-07
IRF1010 Abstract: IRL630 Text: Previous Datasheet Index Next Data Sheet PD -9.1255 IRL630 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS ON Specified at V GS = 4V & 5V 150°C Operating Temperature Fast Switching Ease of paralleling VDSS = 200V	Original	PDF	IRL630 O-220 a9246 IRF1010 IRL630
IRL630A Abstract: No abstract text available Text: $GYDQFHG 3RZHU 026 7 IRL630A FEATURES BVDSS = 200 V ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology RDS(on) = 0.4Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 9 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area	Original	PDF	IRL630A O-220 IRL630A
Untitled Abstract: No abstract text available Text: IRL630, SiHL630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 V RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	PDF	IRL630, SiHL630 O-220AB 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: IRL630S, SiHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive	Original	PDF	IRL630S, SiHL630S 2002/95/EC O-263) 11-Mar-11
IRF1010 Abstract: IRL630 Text: PD -9.1255 IRL630 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS ON Specified at V GS = 4V & 5V 150°C Operating Temperature Fast Switching Ease of paralleling VDSS = 200V RDS(on) = 0.40 Ω ID = 9.0A Description	Original	PDF	IRL630 O-220 IRF1010 IRF1010 IRL630
Untitled Abstract: No abstract text available Text: $GYDQFHG 3RZHU 026 7 IRL630 FEATURES BVDSS = 200 V ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology RDS(on) = 0.4Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 9 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area	Original	PDF	IRL630 O-220
AN-994 Abstract: IRL630S SMD-220 Text: PD - 9.1254 IRL630S HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS ON Specified at VGS = 4V & 5V 150°C Operating Temperature VDSS = 200V RDS(on) = 0.40Ω ID = 9.0A	Original	PDF	IRL630S SMD-220 12-Mar-07 AN-994 IRL630S
Untitled Abstract: No abstract text available Text: IRL630, SiHL630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 V RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	PDF	IRL630, SiHL630 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
IRL630 Abstract: No abstract text available Text: IRL630, SiHL630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 V RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	PDF	IRL630, SiHL630 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRL630
Untitled Abstract: No abstract text available Text: PD- 95590 IRL630SPbF Lead-Free Document Number: 91304 07/20/04 www.vishay.com 1 IRL630SPbF Document Number: 91304 www.vishay.com 2 IRL630SPbF Document Number: 91304 www.vishay.com 3 IRL630SPbF Document Number: 91304 www.vishay.com 4 IRL630SPbF Document Number: 91304	Original	PDF	IRL630SPbF 12-Mar-07
Untitled Abstract: No abstract text available Text: PD- 95756 IRL630PbF Lead-Free Document Number: 91303 8/24/04 www.vishay.com 1 IRL630PbF Document Number: 91303 www.vishay.com 2 IRL630PbF Document Number: 91303 www.vishay.com 3 IRL630PbF Document Number: 91303 www.vishay.com 4 IRL630PbF Document Number: 91303	Original	PDF	IRL630PbF O-220AB 12-Mar-07

SiHL630S Abstract: No abstract text available Text: IRL630S, SIHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D • • • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating	Original	PDF	IRL630S, SIHL630S SMD-220 18-Jul-08 SiHL630S
Untitled Abstract: No abstract text available Text: IRL630, SiHL630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 V RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	PDF	IRL630, SiHL630 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
SIHL630S Abstract: IRL630S SiHL630S-E3 Text: IRL630S, SIHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D • • • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating	Original	PDF	IRL630S, SIHL630S O-263) 18-Jul-08 SIHL630S IRL630S SiHL630S-E3
Untitled Abstract: No abstract text available Text: IRL630A A d van ced Power MOSFET FEATURES BVdss = 200 V ♦ Logic-Level Gate Drive 0.4Q CO > a ♦ Rugged Gate Oxide Technology II ^DS on = ♦ Avalanche Rugged Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge TO-220 ♦ Extended Safe Operating Area	OCR Scan	PDF	IRL630A O-220
Untitled Abstract: No abstract text available Text: IRL630A Advanced Power MOSFET FEATURES b v dss Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA Max. @ V OS = 200V ■ Lower RDS(0N) : 0.335 « (Typ.) 0.4 O	OCR Scan	PDF	IRL630A 003b32fl O-220 7Tb4142 DD3b33D
IRL630 Abstract: No abstract text available Text: N-CHANNEL LOGIC LEVEL MOSFET IRL630/IRL631 FEATURES • L o w e r R d s ON • • • • • • Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability	OCR Scan	PDF	IRL630/IRL631 O-220 IRL630 IRL631
Untitled Abstract: No abstract text available Text: IRL630 A d v a n c e d Power MOSFET FEATURES 200 V 0.4Q > Rugged G ate O xide T e ch n o lo g y CO ^D S o n = a ♦ = Logic-Level G ate Drive ♦ A va la n ch e Rugged T e ch n o lo g y II ♦ BVdss ♦ Lo w e r Input C a pa citance ♦ Im proved G ate C harge	OCR Scan	PDF	IRL630 O-220
IRL630S Abstract: Diode 3D 54 Text: IRL630S A dvanced Power MOSFET FEATURES BVDSS — ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^D S o n = ♦ Lower Input Capacitance lD = 9 A 200 V 0.4Î2 ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature	OCR Scan	PDF	IRL630S IRL630S Diode 3D 54
IRL630A Abstract: diode rg62 018 Text: IRL630A A d vanced Power MOSFET FEATURES BVDSS — ♦ Avalanche Rugged Technology ^DS on = 0.4Î2 ♦ Rugged Gate Oxide Technology lD = 9 A ♦ Logic-Level Gate Drive 200 V ♦ Lower Input Capacitance ♦ Improved Gate Charge TO-220 ♦ Extended Safe Operating Area	OCR Scan	PDF	IRL630A IRL630A diode rg62 018
1RL630A Abstract: IRL630 Text: IRL630A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ BVDSs Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 m A M ax. @ VDS= 200V	OCR Scan	PDF	IRL630A O-220 1RL630A IRL630

Privacy Settings

IRL630 Search Results

IRL630 Price and Stock

Vishay Siliconix IRL630SPBF

Vishay Siliconix IRL630PBF-BE3

Vishay Siliconix IRL630PBF

Vishay Siliconix IRL630

onsemi IRL630A

IRL630 Datasheets (33)

IRL630 Datasheets Context Search

Untitled

Untitled

Untitled

IRF1010

IRL630A

Untitled

Untitled

IRF1010

Untitled

AN-994

Untitled

IRL630

Untitled

Untitled

SiHL630S

Untitled

SIHL630S

Untitled

Untitled

IRL630

Untitled

IRL630S

IRL630A

1RL630A