IRLI3103 Search Results

IRLI3103 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRLI3103		International Rectifier	HEXFET Power Mosfet		Original	PDF

Catalog Datasheet	MFG & Type	PDF	Document Tags
IRFI840G Abstract: IRL3103 IRLI3103 Text: Previous Datasheet Index Next Data Sheet PD 9.1377 IRLI3103 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 30V	Original	PDF	IRLI3103 O-220 IRFI840G IRL3103 IRLI3103
marking 34A Abstract: IRFI840G IRL3103 IRLI3103 Text: PD 9.1377 IRLI3103 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 30V RDS on = 0.014 Ω ID = 38A Description	Original	PDF	IRLI3103 O-220 marking 34A IRFI840G IRL3103 IRLI3103
Untitled Abstract: No abstract text available Text: bitemational S Rectifier PD 9.1377 IRLI3103 PRELIMINARY HEXFET Power MOSFET • • • • • • Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated	OCR Scan	PDF	IRLI3103
Untitled Abstract: No abstract text available Text: International [MlRectifier PD 9.1377 IRLI3103 PRELIMINARY HEXFET Power MOSFET • • • • • • Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated	OCR Scan	PDF	IRLI3103