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    Untitled

    Abstract: No abstract text available
    Text: S i GEC P L ES SE Y SEPTEMBER 1997 ADVANCE INFORMATION S E M I C O N D U C T O R S DS4682-3.3 ITS40F06 POWERLINE N-CHANNEL IGBT The ITS40F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


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    DS4682-3 ITS40F06 ITS40F06 PDF

    T 600 D

    Abstract: ITS40F06 ITS40F06P T0247 PSPICE Orcad ITS40
    Text: MITEL ITS40F06 Medium Frequency Powerline N-Channel IGBT SEM ICON D UCTOR Supersedes February 1998, version DS4682-3.4 DS4682-4.2 March 1999 Key Parameters The ITS40F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for


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    ITS40F06 DS4682-3 DS4682-4 ITS40F06 T0247 T 600 D ITS40F06P T0247 PSPICE Orcad ITS40 PDF