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IXYS Corporation IXFC52N30P MOSFET N-CH 300V 24A ISOPLUS220
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IXFC52N30P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFC52N30P		IXYS	PolarHTTM HiPerFET Power MOSFET		Original	PDF

IXFC52N30P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
52N30 Abstract: 52N30P IXFC52N30P 1M300 52APF Text: IXFC52N30P PolarHTTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 300V 24A Ω 75mΩ 200ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	IXFC52N30P 200ns 220TM E153432 52N30P 6-13-06-C 52N30 52N30P IXFC52N30P 1M300 52APF
1M300 Abstract: 52N30 52N30P IXFC52N30P Text: Advance Technical Information IXFC52N30P PolarHTTM HiPerFET Power MOSFET VDSS ID25 RDS on = 300 V = 32 A Ω = 75 mΩ N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGSS VGSM	Original	PDF	IXFC52N30P ISOPLUS220TM E153432 52N30P 100ms 1M300 52N30 52N30P IXFC52N30P
52N30 Abstract: No abstract text available Text: IXFC52N30P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = =   300V 24A  80m 200ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS220TM E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C	Original	PDF	IXFC52N30P 200ns ISOPLUS220TM E153432 52N30P 6-13-06-C 52N30
Untitled Abstract: No abstract text available Text: PolarHTTM HiPerFET Power MOSFET ISOPLUS220TM VDSS ID25 IXFC52N30P RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 300 24 75 200 V A Ω mΩ ns N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated Symbol Test Conditions Maximum Ratings	Original	PDF	ISOPLUS220TM IXFC52N30P 52N30P 03-14-06-C
Untitled Abstract: No abstract text available Text: PolarHTTM Power MOSFET HiPerFETTM VDSS ID25 IXFC52N30P RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 300V 24A Ω 75mΩ 200ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	IXFC52N30P 200ns 220TM E153432 52N30P 6-13-06-C
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	PDF	O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p