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IXYS Corporation IXFH36N55Q2 MOSFET N-CH 550V 36A TO247AD
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IXFH36N55Q2 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFH36N55Q2		IXYS	Discrete MOSFETs: HiPerFET Power MOSFETS		Original	PDF

IXFH36N55Q2 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFH36N55Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr VDSS = 550 V ID25 = 36 A RDS on = 0.18 Ω trr ≤ 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	IXFH36N55Q2	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Data HiPerFETTM Power MOSFETs IXFH36N55Q2 VDSS = 550 V = 36 A ID25 RDS on = 0.16 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr trr ≤ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	IXFH36N55Q2 O-247 728B1 123B1 065B1	PDF
IXFH36N55Q2 Abstract: PF660 Text: HiPerFETTM Power MOSFETs IXFH36N55Q2 VDSS = 550 V = 36 A ID25 RDS on = 0.18 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr trr ≤ 250 ns Preliminary Data Sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	IXFH36N55Q2 IXFH36N55Q2 PF660	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Data HiPerFETTM Power MOSFETs VDSS = 550 V ID25 = 36 A RDS on = 0.16 Ω IXFH36N55Q2 IXFK36N55Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr trr ≤ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C	Original	IXFH36N55Q2 IXFK36N55Q2 O-247 O-264 728B1	PDF
30NC60 Abstract: IXFH36N55Q2 laser 850 nm Text: Advanced Technical Data HiPerFETTM Power MOSFETs IXFH36N55Q2 VDSS = 550 V = 36 A ID25 RDS on = 0.16 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr trr ≤ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	IXFH36N55Q2 728B1 123B1 728B1 065B1 30NC60 IXFH36N55Q2 laser 850 nm	PDF
IXFD21N100F-8F Abstract: IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50 Text: Chip-Shortform2004.pmd HiPerFETTM Power MOSFET Type VDSS max. RDS ON max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 8 26.10.2004, 12:44 V Ω mm mils IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.015 0.007 0.005	Original	IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y IXFD180N085-9X IXFD280N085-9Y IXFD75N10-7X IXFD80N10Q-8X IXFD170N10-9X IXFD230N10-9Y IXFD70N15-7X IXFD21N100F-8F IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50	PDF