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IXYS Corporation IXFK33N50 MOSFET N-CH 500V 33A TO264AA
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IXFK33N50 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFK33N50		IXYS	500V HiPerFET power MOSFET		Original	PDF

IXFK33N50 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs VDSS IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 RDS on 500 V 33 A 0.16 W 500 V 35 A 0.15 W trr £ 250 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C	Original	PDF	IXFK33N50 IXFK35N50 O-264 33N50 35N50
35N50 Abstract: NS4250 IXFK33N50 IXFK35N50 Text: HiPerFETTM Power MOSFETs VDSS RDS on 500 V 33 A 0.16 W 500 V 35 A 0.15 W trr £ 250 ns IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 Preliminary data Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C	Original	PDF	IXFK33N50 IXFK35N50 O-264 33N50 35N50 35N50 NS4250 IXFK33N50 IXFK35N50
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFK33N50 IXFX35N50 VDSS ID25 33A 35A 500V N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr RDS on  160m  150m TO-264 (IXFK) Symbol Test Conditions VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M	Original	PDF	IXFK33N50 IXFX35N50 O-264 PLUS247TM
35N50 Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs VDSS RDS on 500 V 33 A 0.16 W 500 V 35 A 0.15 W trr £ 250 ns IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	IXFK33N50 IXFK35N50 33N50 35N50 35N50 O-264
IXAN0009 Abstract: 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w Text: IXAN0009 HOW TO DRIVE MOSFETs AND IGBTs INTO THE 21ST CENTURY By Mr. Abhijit D. Pathak and Mr. Ralph E. Locher, IXYS Corporation Santa Clara, CA 95054 ABSTRACT As the industry pushes for higher power levels and higher switching frequencies, power supplies, which use MOSFETs/IGBTs for power	Original	PDF	IXAN0009 IXAN0009 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w
TO-264-aa Abstract: No abstract text available Text: □ IXYS v DSS HiPerFET Power MOSFETs DS on 500 V 33 A 0.16 Q 500 V 35 A 0.15 Q trr < 250 ns IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr D ^D25 Preliminary data Symbol Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C	OCR Scan	PDF	IXFK33N50 IXFK35N50 33N50 35N50 O-264AA outlinesTO-264AAexceptL, TO-264-aa
smd diode 513 Abstract: TO-264 35n50 Text: HiPerFET Power MOSFETs V DSS IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t D ^D25 DS on 500 V 33 A 0.16 Q 500 V 35 A 0.15 Q t < 250 ns Preliminary data Symbol Test Conditions Maximum Ratings V DSS Tj = 25°C to 150°C	OCR Scan	PDF	IXFK33N50 IXFK35N50 33N50 35N50 35N50 O-264 smd diode 513 TO-264
264AA Abstract: SMD-264 TO264AA smd diode 513 TO-264-aa 35N50 diode 253 TO-264AA Text: HiPerFET Power MOSFETs ^D S S IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr ^D25 ^DS on 500 V 33 A 0.16 Q 500 V 35 A 0.15 Q trr < 250 ns Preliminary data Symbol Test C onditions Maximum Ratings V DSS Tj = 25°C to150°C	OCR Scan	PDF	IXFK33N50 IXFK35N50 to150 33N50 35N50 O-264AA 264AA SMD-264 TO264AA smd diode 513 TO-264-aa diode 253 TO-264AA
ne 22 mosfet Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50 Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)	OCR Scan	PDF	ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50