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IXYS Corporation IXFZ520N075T2 MOSFET N-CH 75V 465A DE475
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFZ520N075T2	Tube	60		1	1 $39.79 10 $39.79 100 $30.5225 1000 $30.5225 10000 $30.5225	Buy Now
Mouser Electronics	IXFZ520N075T2		54			1 $42.21 10 $35.42 100 $31.6 1000 $31.6 10000 $31.6	Buy Now
Future Electronics	IXFZ520N075T2	Tube			20	1 - 10 - 100 $35.77 1000 $35.77 10000 $35.77	Buy Now
TME	IXFZ520N075T2				1	1 $53.26 10 $47.97 100 $38.04 1000 $38.04 10000 $38.04	Get Quote
Littelfuse Inc IXFZ520N075T2 Discmsft Nchtrenchgate-Gen2 De475/Tube \|Littelfuse IXFZ520N075T2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXFZ520N075T2	Bulk			300	1 - 10 - 100 - 1000 - 10000 -	Buy Now

IXFZ520N075T2 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFZ520N075T2		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 465A DE-475		Original	PDF

IXFZ520N075T2 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IXFZ520N075T2 Abstract: No abstract text available Text: Advance Technical Information IXFZ520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS on ≤ 75V 465A Ω 1.3mΩ (Electrically Isolated Tab) DE475 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings	Original	IXFZ520N075T2 DE475 IXFZ520N075T2	PDF
Untitled Abstract: No abstract text available Text: Advance Technical Information TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 IXFZ520N075T2 = = RDS on ≤ 75V 465A Ω 1.3mΩ (Electrically Isolated Tab) DE475 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode D D D G Symbol Test Conditions	Original	IXFZ520N075T2 DE475	PDF
MMIX1F520N075T2 Abstract: IXFZ520N075T2 ixfz520n075 Text: Advance Technical Information MMIX1F520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS on ≤ 75V 500A Ω 1.6mΩ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions	Original	MMIX1F520N075T2 IXFZ520N075T2 MMIX1F520N075T2 IXFZ520N075T2 ixfz520n075	PDF
140tr Abstract: No abstract text available Text: Preliminary Technical Information MMIX1F520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS on ≤ 75V 500A Ω 1.6mΩ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions	Original	MMIX1F520N075T2 IXFZ520N075T2 140tr	PDF
Untitled Abstract: No abstract text available Text: Preliminary Technical Information TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET MMIX1F520N075T2 VDSS ID25 = = RDS on ≤ 75V 500A Ω 1.6mΩ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions	Original	MMIX1F520N075T2 IXFZ520N075T2	PDF
IXYS Announces High-Current GigaMOS TrenchT2TM Power MOSFETs in Low-profile DE-Series Packages Abstract: IXFZ520N075T2 IXTZ550N055T2 Text: Press Release Contact: Ronnie Ganitano IXYS Corporation 1590 Buckeye Dr. Milpitas Ca. 95035 Tel: 408-457-9000 IXYS Announces High-Current GigaMOS TrenchT2TM Power MOSFETs in Low-profile DE-Series Packages. Milpitas, CA. and Biel, Switzerland. October 5, 2010 – IXYS Corporation NASDAQ:IXYS announces	Original	IXTZ550N055T2 IXFZ520N075T2 IXYS Announces High-Current GigaMOS TrenchT2TM Power MOSFETs in Low-profile DE-Series Packages	PDF