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    IXGH64N60A3

    Abstract: No abstract text available
    Text: Preliminary Technical Information GenX3TM 600V IGBT IXGH64N60A3 IXGT64N60A3 VCES = 600V IC110 = 64A VCE sat ≤ 1.35V Ultra-lowVsat PT IGBTs for up to 5 kHz switching Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXGH64N60A3 IXGT64N60A3 IC110 64N60A3 7-02-08-B IXGH64N60A3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information GenX3TM 600V IGBT IXGH64N60A3 IXGT64N60A3 VCES = 600V IC110 = 64A VCE sat ≤ 1.35V Ultra-lowVsat PT IGBTs for up to 5 kHz switching Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TC = 25°C to 150°C 600 V VCGR


    Original     		IXGH64N60A3 IXGT64N60A3 IC110 O-247 64N60A3 7-02-08-B PDF

    Inverter Welder

    Abstract: inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter
    Text: IXYS POWER Efficiency through Technology NEW 600V GenX3 IGBTs PRO D UC T next generation 600V IGBTs for power conversion applications january 2009 OVERVIEW IXYS extends its GenX3TM insulated gate bipolar transistor IGBT product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3TM


    Original     		PB60IGBTA3B3C3 Inverter Welder inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter PDF