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    IXYS Corporation IXTC96N25T

    MOSFET N-CH ISOPLUS220
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    IXTC96N25T Datasheets Context Search

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    96N25T

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTC96N25T Trench Gate Power MOSFET VDSS ID25 = 250V = 40A Ω ≤ 31mΩ Electrically Isolated Back Surface RDS(on) N-Channel Enhancement Mode Avalanche Rated ISOPLUS220 (IXTC) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		IXTC96N25T ISOPLUS220 E153432 96N25T 0-11-07-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information Trench Gate Power MOSFET VDSS ID25 IXTC96N25T = 250V = 40A Ω ≤ 31mΩ Electrically Isolated Back Surface RDS(on) N-Channel Enhancement Mode Avalanche Rated ISOPLUS220 (IXTC) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		IXTC96N25T ISOPLUS220 E153432 96N25T 0-11-07-A PDF