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    IXTF200N10T Search Results

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    IXTF200N10T Price and Stock

    IXYS Corporation IXTF200N10T

    MOSFET N-CH 100V 90A I4PAC
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    DigiKey IXTF200N10T Tube 300
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    Mouser Electronics IXTF200N10T
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    • 1000 $7.88
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    Future Electronics IXTF200N10T Tube 25
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    • 100 $7.37
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    Bristol Electronics IXTF200N10T 25
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    Quest Components IXTF200N10T 20
    • 1 $11.61
    • 10 $10.32
    • 100 $10.32
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    TTI IXTF200N10T Tube 300
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    TME IXTF200N10T 1
    • 1 $10.72
    • 10 $8.54
    • 100 $7.66
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    Littelfuse Inc IXTF200N10T

    Discmsft Nchtrenchgate-Gen1 I4-Pak Iso+/ Tube |Littelfuse IXTF200N10T
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    Newark IXTF200N10T Bulk 300
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    IXYS Integrated Circuits Division IXTF200N10T

    MOSFET DIS.90A 100V N-CH I4PAC-5 TRENCHMV
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    Ozdisan Elektronik IXTF200N10T 21
    • 1 $10.90903
    • 10 $10.90903
    • 100 $9.9173
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    IXTF200N10T Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTF200N10T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 90A I4-PAC-5 Original PDF

    IXTF200N10T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXTF200N10T Trench Gate Power MOSFET VDSS ID25 = 100 V = 103 A Ω ≤ 6.0 mΩ RDS on (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF IXTF200N10T 200N10T

    IXTF200N10T

    Abstract: 200N1
    Text: Preliminary Technical Information IXTF200N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated = 100V = 90A Ω ≤ 7mΩ ISOPLUS i4-PakTM (5-lead) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXTF200N10T 200N10T 9-30-08-D IXTF200N10T 200N1

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXTF200N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated ISOPLUS i4-PakTM (5-lead) (IXTF) Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 M


    Original     		PDF IXTF200N10T 405B2

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXTF200N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated = 100V = 120A Ω ≤ 6.3mΩ ISOPLUS i4-PakTM (5-lead) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXTF200N10T 338B2

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTF200N10T RDS on (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated = 100V = 90A Ω ≤ 7mΩ ISOPLUS i4-PakTM (5-lead) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXTF200N10T 200N10T 9-30-08-D

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTF200N10T Trench Gate Power MOSFET VDSS ID25 = 100 V = 103 A ≤ 6.0 m Ω RDS on (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF IXTF200N10T 200N10T_

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    isoplus ixys mounting

    Abstract: isoplus IXTF230N085T SIL-PAD ISOPLUS247 IXFC14N60P IXFP14N60P IXTF200N10T IXTF250N075T IXTF280N055T
    Text: H I G H C U R R E N T T R E N C H M V P O W E R M O S F E T S I N 5 - L E A D I S O P L U S I 4 - PA K S ™ N E W P R O D U C T B R I E F SUMMARY TABLE Part Number High Current TrenchMVTM Power MOSFETs in 5-lead ISOPLUS i4-PaksTM NEXT GENERATION 55V TO 100V TRENCH POWER MOSFETS


    Original     		PDF IXTF280N055T IXTF250N075T IXTF230N085T IXTF200N10T E153432) IXFP14N60P 2000TM IXFC14N60P ISOPLUS247TM com/AN505 isoplus ixys mounting isoplus IXTF230N085T SIL-PAD ISOPLUS247 IXFC14N60P IXTF200N10T IXTF250N075T IXTF280N055T

    1262-33

    Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
    Text: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.


    Original     		PDF 5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T