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    IXTH10P50 Search Results

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    IXTH10P50 Price and Stock

    Littelfuse Inc IXTH10P50P

    MOSFET P-CH 500V 10A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTH10P50P Tube 4 1
    • 1 $8.12
    • 10 $8.12
    • 100 $5.04433
    • 1000 $4.24337
    • 10000 $4.24337
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    Verical IXTH10P50P 30 30
    • 1 -
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    • 100 $5.023
    • 1000 $4.152
    • 10000 $4.152
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    Arrow Electronics IXTH10P50P 44 43 Weeks 30
    • 1 -
    • 10 -
    • 100 $5.023
    • 1000 $4.152
    • 10000 $4.152
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    Newark IXTH10P50P Bulk 216 1
    • 1 $8
    • 10 $8
    • 100 $6.38
    • 1000 $5.04
    • 10000 $4.25
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    IXYS Corporation IXTH10P50

    MOSFET P-CH 500V 10A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTH10P50 Tube 30
    • 1 -
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    • 100 $12.19167
    • 1000 $12.19167
    • 10000 $12.19167
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    Future Electronics IXTH10P50 Tube 24 Weeks 30
    • 1 -
    • 10 -
    • 100 $18.9
    • 1000 $18.9
    • 10000 $18.9
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    Onlinecomponents.com IXTH10P50 10
    • 1 $44.33
    • 10 $44.33
    • 100 $11.09
    • 1000 $11.09
    • 10000 $11.09
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    Quest Components IXTH10P50 7
    • 1 $18.4275
    • 10 $18.4275
    • 100 $18.4275
    • 1000 $18.4275
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    IXTH10P50 7
    • 1 $6.477
    • 10 $4.7498
    • 100 $4.7498
    • 1000 $4.7498
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    IXTH10P50 6
    • 1 $14.5402
    • 10 $12.9246
    • 100 $12.9246
    • 1000 $12.9246
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    IXYS Corporation IXTH10P50P

    MOSFETs -10.0 Amps -500V 1.000 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTH10P50P 1,352
    • 1 $8.07
    • 10 $6.42
    • 100 $5.19
    • 1000 $4.34
    • 10000 $4.25
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    TTI IXTH10P50P Tube 570 30
    • 1 -
    • 10 -
    • 100 $5.12
    • 1000 $4.41
    • 10000 $4.24
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    TME IXTH10P50P 1
    • 1 $7.42
    • 10 $7.42
    • 100 $6.18
    • 1000 $5.01
    • 10000 $5.01
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    New Advantage Corporation IXTH10P50P 493 1
    • 1 -
    • 10 -
    • 100 $10.46
    • 1000 $9.76
    • 10000 $9.76
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    Littelfuse Inc IXTH10P50

    Disc Mosfet P Channel-Std To-247Ad/Tube |Littelfuse IXTH10P50
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    Newark IXTH10P50 Bulk 30
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    IXYS Integrated Circuits Division IXTH10P50P

    MOSFET DIS.10A 500V P-CH TO-247AD POLARP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXTH10P50P 593
    • 1 $8.10953
    • 10 $8.10953
    • 100 $7.3723
    • 1000 $7.3723
    • 10000 $7.3723
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    Win Source Electronics IXTH10P50P 240
    • 1 -
    • 10 -
    • 100 $3.6874
    • 1000 $3.6874
    • 10000 $3.6874
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    IXTH10P50 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTH10P50 IXYS 500V standard power MOSFET Original PDF
    IXTH10P50 IXYS High Voltage Power MOSFETs Scan PDF
    IXTH10P50 IXYS High Voltage Power MOSFETs Scan PDF
    IXTH10P50P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 500V 10A TO-247 Original PDF
    IXTH10P50SN IXYS Transistor Mosfet P-CH 500V 10A 3TO-247 AD Original PDF

    IXTH10P50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXTP10P50P

    Abstract: 10P50P IXTH10P50P IXTH10P50
    Text: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P S G D TAB D D(TAB) S G Maximum Ratings VDSS TJ = 25°C to 150°C - 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 500


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    PDF O-263 IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P O-247 O-220 100ms 10P50P IXTH10P50

    10P50P

    Abstract: IXTP10P50P IXTH10P50P IXTA10P50P IXTQ10P50P IXTP10P50 IXTH10P50
    Text: PolarPTM Power MOSFET IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P P-Channel Enhancement Mode Avalanche Rated TO-263 IXTA G VDSS ID25 RDS(on) TO-220 (IXTP) G G D(TAB) D S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


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    PDF IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P O-263 O-220 O-247 100ms IXTA10P50P 10P50P IXTP10P50P IXTH10P50P IXTQ10P50P IXTP10P50 IXTH10P50

    IXTH10P50

    Abstract: No abstract text available
    Text: PolarPTM Power MOSFET IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P P-Channel Enhancement Mode Avalanche Rated TO-263 IXTA G VDSS ID25 RDS(on) TO-220 (IXTP) G G D(TAB) D S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original
    PDF IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P O-263 O-220 O-247 100ms IXTA10P50P IXTH10P50

    IXTH10P50

    Abstract: No abstract text available
    Text: PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated TO-263 IXTA G IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P VDSS ID25 TO-220 (IXTP) TO-247 (IXTH) Symbol RDS(on) S D(TAB) G G D(TAB) D S Test Conditions VDSS TJ = 25°C to 150°C - 500 V VDGR


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    PDF IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P O-220 O-263 O-247 100ms IXTA10P50P IXTH10P50

    10P50P

    Abstract: IXTP10P50P IXTH10P50
    Text: PolarPTM Power MOSFETs IXTA10P50P IXTP10P50P IXTQ10P50P IXTH10P50P P-Channel Enhancement Mode Avalanche Rated TO-263 AA IXTA VDSS ID25 RDS(on) G D (Tab) G D DS D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


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    PDF IXTA10P50P IXTP10P50P IXTQ10P50P IXTH10P50P O-263 O-220AB -55Area 100ms IXTA10P50P 10P50P IXTP10P50P IXTH10P50

    IXTH10P50

    Abstract: No abstract text available
    Text: PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P RDS on TO-247 (IXTH) TO-263 (IXTA) G VDSS ID25 S G D(TAB) D TO-220 (IXTP) D(TAB) S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


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    PDF IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P O-247 O-263 O-220 100ms IXTA10P50P IXTH10P50

    to-247 to-220 to-3p

    Abstract: IXTA52P10P IXTA36P15P IXTN40P50P IXTQ52P10P sot-227 footprint IXTA10P50P ixtq IXTH10P50 IXTH10P50P
    Text: IXYS POWER Efficiency through Technology N EW P RO D U C T B RIE F PolarPTM P-Channel Power MOSFETs Next Generation P-Channel Power MOSFETs -100V to -500V MAY 2008 OVERVIEW IXYS’ PolarP P-Channel Power MOSFETs are designed to bring a more cost-effective


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    PDF -100V -500V IXTA52P10P FQB34P10 IXTA52P10P -100V, O-263 to-247 to-220 to-3p IXTA36P15P IXTN40P50P IXTQ52P10P sot-227 footprint IXTA10P50P ixtq IXTH10P50 IXTH10P50P

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    p-CHANNEL POWER MOSFET 600v

    Abstract: IXTH20P50P IXTP28P065T 014 IR MOSFET Transistor P channel MOSFET 10A ixtq IXTA36P15P IXTA76P10T IXTH16P60P IXTK32P60P
    Text: NEW PRO D U CT B RIEF Introducing P-Channel Power MOSFETs next generation p-channel power mosfets -50v to -600v SEPTEMBER 2008 OVERVIEW IXYS has reinforced its P-Channel Power MOSFET portfolio with the introduction of two advanced new families; TrenchPTM and PolarPTM. These families take


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    PDF -600v -150V p-CHANNEL POWER MOSFET 600v IXTH20P50P IXTP28P065T 014 IR MOSFET Transistor P channel MOSFET 10A ixtq IXTA36P15P IXTA76P10T IXTH16P60P IXTK32P60P

    IXFd50n20

    Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
    Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type


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    PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


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    PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    Untitled

    Abstract: No abstract text available
    Text: IPIXYS v DSS Standard Power MOSFET IXTH10P50 IXTH11P50 -500 V -500 V p DS on ^D25 0.90 Q -10 A 0.75 Û -11 A P-Channel Enhancement Mode Avalanche Rated Preliminary data Symbol Test Conditions V„ss Tj =25°Cto150°C -500 V ^ -500 V V DOB Maximum Ratings


    OCR Scan
    PDF IXTH10P50 IXTH11P50 Cto150 10P50 11P50 O-247

    switching pushpull

    Abstract: No abstract text available
    Text: Standard Power MOSFET IXTH10P50 IXTH11P50 VDSS = -500 V lD25 =-10/-11 R d s ,o „ , = 0.90/0.75 Cl P-Channel Enhancement Mode Avalanche Rated Preliminary data Maximum Ratings Symbol Test Conditions ^DSS Tj = 25°C to 150°C -500 V v DGR T, = 25°C to 150°C; RGS = 1 Mi2


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    PDF IXTH10P50 IXTH11P50 10P50 11P50 11P50 O-247 switching pushpull

    IXTH40N25

    Abstract: irfp450 equivalent IXTH7P50 IXTH12N90 IXTD50N20-7X IXTD11N80 IRFP460 equivalent
    Text: Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type V *BSS m ax. e * m ax. typ- typ. Chip type C hips» se «18 Source Ct bond w ire T j.s lS O 'C V - datasheet Q ns mm Dim. out­ line No. mfts IXTD67N10-7X IXTD75N10-7X 100 0.025


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    PDF IXTD67N10-7X IXTD75N10-7X IXTD42N20-7X IXTD50N20-7X IXTD40N25-6X IXTD40N30-7X IRFC450-5X IRFC460-6X IXTD21N50-7X IXTD24N50-7X IXTH40N25 irfp450 equivalent IXTH7P50 IXTH12N90 IXTD11N80 IRFP460 equivalent

    30n50 mosfet

    Abstract: DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel
    Text: Contents Insulated Gate Bipolar Transistors IGBT Package style vCES Tc = 2S°C 2. TO-247 SMD 1a. TO-263AA 2a. TO-247 SMD Page A V 1 600 20 48 3.0 2.7 3 600 60 2.5 2 600 75 2.7 1 600 20 20 2.5 3.0 600 48 60 60 2.7 2.9 2.5 600 16 25 16 2.5 600 48 2.7 7 600


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    PDF O-263 O-263AA O-247 IXGA10N60A IXGA24N60A IXGH32N60B IXGH50N60AS IXGA10N60U1 30n50 mosfet DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel

    IRF250

    Abstract: IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95
    Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­


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    PDF 00V/12A IRF250 IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95

    IXTH13P20

    Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460
    Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­


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