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Littelfuse Inc IXTH110N25T MOSFET N-CH 250V 110A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTH110N25T	Tube	521		1	1 $10.82 10 $10.82 100 $6.44133 1000 $5.09949 10000 $5.09949	Buy Now
Newark	IXTH110N25T	Bulk	300		1	1 $9.19 10 $9.19 100 $5.77 1000 $5.26 10000 $5.26	Buy Now
IXYS Corporation IXTH110N25T MOSFETs 110 Amps 250V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTH110N25T		1,118			1 $9.54 10 $7.55 100 $6.37 1000 $5.09 10000 $5.09	Buy Now
Future Electronics	IXTH110N25T	Tube	270		30	1 - 10 - 100 $5 1000 $5 10000 $5	Buy Now
	IXTH110N25T	Tube			30	1 - 10 - 100 $5 1000 $5 10000 $5	Buy Now
Bristol Electronics	IXTH110N25T		530			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	IXTH110N25T		400			1 $13.032 10 $13.032 100 $13.032 1000 $6.516 10000 $6.516	Buy Now
	IXTH110N25T		48			1 $13.032 10 $8.688 100 $8.0364 1000 $8.0364 10000 $8.0364	Buy Now
TTI	IXTH110N25T	Tube			300	1 - 10 - 100 - 1000 $5.1 10000 $5.1	Buy Now

TME	IXTH110N25T		31		1	1 $9.04 10 $9.04 100 $7.37 1000 $5.62 10000 $5.52	Buy Now
New Advantage Corporation	IXTH110N25T		106		1	1 - 10 - 100 $11.51 1000 $10.74 10000 $10.74	Buy Now
IXYS Integrated Circuits Division IXTH110N25T MOSFET DIS.110A 250V N-CH TO-247AD TRENCH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXTH110N25T		106			1 $8.86402 10 $8.86402 100 $8.0582 1000 $8.0582 10000 $8.0582	Buy Now

IXTH110N25T Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTH110N25T		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 110A TO-247		Original	PDF

IXTH110N25T Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IXTV110N25TS Abstract: ixth110n25t ixtv110n25 IXTH110 PLUS220SMD 694W Text: IXTH110N25T IXTV110N25TS Trench Gate Power MOSFET VDSS ID25 RDS on = 250V = 110A Ω ≤ 24mΩ N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTH110N25T IXTV110N25TS O-247 110N25T 8-11-08-A IXTV110N25TS ixth110n25t ixtv110n25 IXTH110 PLUS220SMD 694W	PDF
Untitled Abstract: No abstract text available Text: TrenchTM Power MOSFETs VDSS ID25 IXTH110N25T IXTV110N25TS = 250V = 110A ≤ 24mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTH110N25T IXTV110N25TS O-247 110N25T 5-14-12-B	PDF
IXTH110N25T Abstract: PLUS220SMD Text: IXTH110N25T IXTV110N25TS TrenchTM Power MOSFETs VDSS ID25 = 250V = 110A ≤ 24mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTH110N25T IXTV110N25TS O-247 PLUS220SMD 110N25T 5-14-12-B	PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS	PDF
IXTH110 Abstract: 851 36 RG 16 26 ixth110n25t IXTD110N25T-8W as001 A114B dimensions Text: Preliminary Technical Information Trench Gate Power MOSFET Die IXTD110N25T-8W VDSS = 250V N-Channel Enhancement Mode Die Outline Notes: 1. Die Thickness: 200 ± 25 m 2. Die Size Tolerance: ± 50 μm 3. Top Bonding Pad Metal: 30 KÅ nominally thick Al 4. Back Metal: 3 layers of Ti, Ni & Au;	Original	IXTD110N25T-8W 22-A114-B AS0011. 110N25T 1-08-A IXTH110 851 36 RG 16 26 ixth110n25t IXTD110N25T-8W as001 A114B dimensions	PDF