IXTM4N60 Search Results

IXTM4N60 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTM4N60		IXYS	High Voltage Power MOSFETs		Scan	PDF
IXTM4N60		IXYS	High Voltage Power MOSFETs		Scan	PDF
IXTM4N60		Sharp	600 V, 6 A, sourse-drain diode		Scan	PDF
IXTM4N60A		IXYS	High Voltage Power MOSFETs		Scan	PDF
IXTM4N60A		IXYS	High Voltage Power MOSFETs		Scan	PDF

IXTM4N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
4N60R Abstract: 4n60 4n60a IXTM4N60 IXTP4N60 Text: I X Y S CORP 1ÖE D • 4bêb22b OOOObll S ■ IXTP4N60, IXTM4N60 □ IX Y S 4 A M P S , 6 0 0 V, 2.1S2/2.4Q M A X IM U M R A T IN G S _ I Parameter Sym. Drain-Source Voltage (1 Drain-Gate Voltage (RGS=1.Q MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient	OCR Scan	PDF	IXTP4N60, IXTM4N60 IXTP4N60 IXTM4N60 O-220 300jjs, 4N60R 4n60 4n60a
mosfet 4n60 Abstract: 4n60a 4N60R IXTP4N60 IXTM4N60 4n60 Text: I X Y S CORP 1ÖE D • 4bêb22b OOOObll 5 U □IXYS 1XTP4N60, IXTM4N60 4 AM PS, 600 V, 2.1S2/2.4Q MAXIMUM RATINGS _ I IXTP4N60 IXTM4N60 600 600 ±20 ±30 4 16 75 0.6 -6 5 to +150 300 (1.6mm from case for 10 sec. Sym. Parameter Drain-Source Voltage (1) Drain-Gate Voltage (RGS=1.Q MQ) (1)	OCR Scan	PDF	IXTP4N60, IXTM4N60 IXTP4N60 IXTM4N60 specifi420 O-204 O-220 O-247 mosfet 4n60 4n60a 4N60R 4n60
IRF250 Abstract: IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95 Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per formance and ruggedness in high voltage switching applications. In addition, they are directly com	OCR Scan	PDF	00V/12A IRF250 IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95
IXTH13P20 Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460 Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per formance and ruggedness in high voltage switching applications. In addition, they are directly com	OCR Scan	PDF
IXTM6N90A Abstract: No abstract text available Text: 4686226 03E 00145 I X Y S CORP I X Y S CORP □3 D D Ë T \| 4bflbS2b DDODIMS 2 N-Channel MOSFETs Drain Current Id @ 25 °C C ase On R esistance Part Drain-Source Voltage Number V BR DSS l[>(Cont) lO(Pulsed) RDS(on) (Volts) (Amps) (Amps) (O hm s) 1000 1000	OCR Scan	PDF	IXTM5N100A IXTM5N100 IXTM4N100A IXTM4N100 IXTM2N100A IXTM2N100 IXTM5N95A IXTM5N95 IXTM4N95A IXTM4N95 IXTM6N90A