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    IXYN100N120C3H1 Price and Stock

    IXYS Corporation IXYN100N120C3H1

    IGBT MOD 1200V 134A 690W SOT227B
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    DigiKey IXYN100N120C3H1 Tube 1
    • 1 $36.19
    • 10 $27.808
    • 100 $36.19
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    Mouser Electronics IXYN100N120C3H1 24
    • 1 $39.33
    • 10 $32
    • 100 $32
    • 1000 $32
    • 10000 $32
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    Future Electronics IXYN100N120C3H1 Tube 50 10
    • 1 -
    • 10 $28.64
    • 100 $28.22
    • 1000 $27.86
    • 10000 $27.86
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    IXYN100N120C3H1 Tube 10
    • 1 -
    • 10 $28.64
    • 100 $28.22
    • 1000 $27.86
    • 10000 $27.86
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    TTI IXYN100N120C3H1 Tube 300
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    TME IXYN100N120C3H1 7 1
    • 1 $64.3
    • 10 $51.1
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    Chip 1 Exchange IXYN100N120C3H1 1,669
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    Littelfuse Inc IXYN100N120C3H1

    Disc Igbt Xpt-Genx3 Sot-227Ui(Mini/ Tube |Littelfuse IXYN100N120C3H1
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    Newark IXYN100N120C3H1 Bulk 300
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    • 1000 $37.23
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    IXYS Integrated Circuits Division IXYN100N120C3H1

    IGBT MOD.DIODE SINGLE 134A 1200V SOT-227B GENX3
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    Ozdisan Elektronik IXYN100N120C3H1
    • 1 $39.89538
    • 10 $37.2854
    • 100 $37.2854
    • 1000 $37.2854
    • 10000 $37.2854
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    IXYN100N120C3H1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXYN100N120C3H1 IXYS IGBTs - Modules, Discrete Semiconductor Products, IGBT XPT 1200V 134A SOT-227B Original PDF

    IXYN100N120C3H1 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXYN100N120C3H1 1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 62A 3.5V 110ns E Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original
    PDF IXYN100N120C3H1 IC110 110ns OT-227B, E153432 IF110

    iXYN100N120C3H1

    Abstract: ixyn100n120c3
    Text: Advance Technical Information IXYN100N120C3H1 1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 62A 3.5V 110ns E Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original
    PDF IXYN100N120C3H1 IC110 110ns IF110 OT-227B, E153432 100N120C3 iXYN100N120C3H1 ixyn100n120c3

    IXYN100N120C3H1

    Abstract: No abstract text available
    Text: Advance Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode IXYN100N120C3H1 High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 62A 3.5V 110ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR


    Original
    PDF IXYN100N120C3H1 IC110 110ns OT-227B, E153432 IF110 100N120C3 IXYN100N120C3H1

    IXYS CORPORATION

    Abstract: MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ
    Text: NEWS PCIM 2013 IXYS Efficiency through Technology ComPack Thyristor Module Platform A new Design that reduces Parts and Material Costs with Higher Power Density has a 33% reduced footprint and weight 67% less than current alternatives, significantly illustrating how IXYS’ MORE POWER, LESS


    Original
    PDF DMA10P1600PZ /1600V) CMA50E1600TZ DSP45-16TZ O-263 D-68623 CH-2555 IXYS CORPORATION MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ