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Samsung Semiconductor K4H510838J-BCB3000
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K4H510838J Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
K4H510838J Abstract: K4H511638J Text: Rev. 1.11, Aug. 2011 K4H510438J K4H510838J K4H511638J 512Mb J-die DDR SDRAM 60FBGA & 66TSOP- II with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.	Original	PDF	K4H510438J K4H510838J K4H511638J 512Mb 60FBGA 66TSOP- K4H511638J
K4H511638J Abstract: K4H510838J K4H510838J-LC K4H511638J-BC K4H511638J-LC K4H510438J K4H511638JLC Text: Rev. 1.1, Feb. 2011 K4H510438J K4H510838J K4H511638J 512Mb J-die DDR SDRAM 60FBGA & 66TSOP- II with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.	Original	PDF	K4H510438J K4H510838J K4H511638J 512Mb 60FBGA 66TSOP- K4H511638J K4H510838J-LC K4H511638J-BC K4H511638J-LC K4H511638JLC
Untitled Abstract: No abstract text available Text: Product Specifications PART NO.: VL368L3223E-B3S REV: 1.0 General Information 256MB 32Mx64 DDR SDRAM NON-ECC UNBUFFERED DIMM 184-PIN Description The VL368L3223E is a 32Mx64 Double Data Rate SDRAM high density DIMM. This memory module is single rank, consists of eight CMOS 32Mx8 bits with 4 banks Synchronous DRAMs in TSOP-II packages and a 2K EEPROM in an	Original	PDF	VL368L3223E-B3S 256MB 32Mx64 184-PIN VL368L3223E 32Mx8 184-pin 184-pin,
Untitled Abstract: No abstract text available Text: Data Sheet 512MB DDR Features: SDN06464D1BJ1SA-xx W R • 512MByte in FBGA Technology •       RoHS compliant Options:  Data Rate / Latency DDR 400 MT/s CL3 DDR 333 MT/s CL2.5  Module density 512MB with 8 dies and 1 rank  Standard Grade	Original	PDF	512MB SDN06464D1BJ1SA-xx 512MByte 200-pin 64-bit DDR400) PC-3200 MO-224. 2002/95/EC CH-9552
K4H510838J-LCCC Abstract: K4H510838J VL368L3223E DDR333 PC2700 Text: Product Specifications PART NO.: VL368L3223E-B3S REV: 1.0 General Information 256MB 32Mx64 DDR SDRAM NON-ECC UNBUFFERED DIMM 184-PIN Description The VL368L3223E is a 32Mx64 Double Data Rate SDRAM high density DIMM. This memory module is single rank, consists of eight CMOS 32Mx8 bits with 4 banks Synchronous DRAMs in TSOP-II packages and a 2K EEPROM in an	Original	PDF	VL368L3223E-B3S 256MB 32Mx64 184-PIN VL368L3223E 32Mx8 184-pin 184-pin, K4H510838J-LCCC K4H510838J DDR333 PC2700
K4X2G323PD8GD8 Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03 Text: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from	Original	PDF	BR-12-ALL-001 K4X2G323PD8GD8 K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
Untitled Abstract: No abstract text available Text: Data Sheet 512MB DDR Features: SDN06464D1BJ1SA-xx W R • 512MByte in FBGA Technology •       RoHS compliant Options:  Data Rate / Latency DDR 400 MT/s CL3 DDR 333 MT/s CL2.5  Module density 512MB with 8 dies and 1 rank  Standard Grade	Original	PDF	512MB SDN06464D1BJ1SA-xx 512MByte 200-pin 64-bit DDR400) PC-3200 MO-224. 2002/95/EC CH-9552
Untitled Abstract: No abstract text available Text: Data Sheet 1024MB DDR Features: SDN01G64D1BJ2SA-xxR • 1GByte in FBGA Technology •       RoHS compliant Options:  Data Rate / Latency DDR 400 MT/s CL3 DDR 333 MT/s CL2.5  Module density 1GByte with 16 dies and 2 rank  Standard Grade	Original	PDF	1024MB SDN01G64D1BJ2SA-xxR 200-pin 64-bit rank128M DDR400) PC-3200 MO-224. 2002/95/EC CH-9552
samsung ddr3 ram MTBF Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd Text: PRODUCT SELECTION GUIDE LCD, Memory and Storage \| 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks	Original	PDF	BR-12-ALL-001 samsung ddr3 ram MTBF KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
K9HDG08U1A Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks	Original	PDF	BR-11-ALL-001 K9HDG08U1A K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
Untitled Abstract: No abstract text available Text: Data Sheet 1024MB DDR Features: SDN01G64D1BJ2SA-xxR • 1GByte in FBGA Technology •       RoHS compliant Options:  Data Rate / Latency DDR 400 MT/s CL3 DDR 333 MT/s CL2.5  Module density 1GByte with 16 dies and 2 rank  Standard Grade	Original	PDF	1024MB SDN01G64D1BJ2SA-xxR 200-pin 64-bit rank128M DDR400) PC-3200 MO-224. 2002/95/EC CH-9552