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    K8A2815ET Search Results

    K8A2815ET Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K8A2815ETM-LC7B Samsung Electronics IC FLASH MEM PARL 1.7V TO 1.9V 128MBIT 8MX16 90NS 64TBGA Original PDF
    K8A2815ETM-TC7B Samsung Electronics IC FLASH MEM PARL 1.7V TO 1.9V 128MBIT 8MX16 90NS 64TBGA Original PDF
    K8A2815ETM-TI7B Samsung Electronics IC FLASH MEM PARL 1.7V TO 1.9V 128MBIT 8MX16 90NS 64TBGA Original PDF

    K8A2815ET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K5L2833ATA

    Abstract: QSC6030 samsung nor flash k5l2833 WS128N K8A2815ETC samsung SPANSION samsung flash controller k5l28
    Text: SEC-Mobile-ROM Using SEC K8A2815ETC & Spansion WS128N Compatibility For NOR Flash Application Note Version 1.0, April 2009 Samsung Electronics Copyright ⓒ 2009 Samsung Electronics Co.,LTD. Copyright 2009 Samsung Electronics Co, Ltd. All Rights Reserved.


    Original     		K8A2815ETC WS128N K5L2833ATA QSC6030 samsung nor flash k5l2833 K8A2815ETC samsung SPANSION samsung flash controller k5l28 PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.0, Nov. 2010 K8A2815ET B E 128Mb E-die NOR FLASH 8M x16, Sync Burst, Page Mode, Multi Bank 1.7V to 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		K8A2815ET 128Mb 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh 058000h-05FFFFh 050000h-057FFFh 048000h-04FFFFh 040000h-047FFFh 038000h-03FFFFh PDF

    BA246

    Abstract: BA139 BA257 ba153 BA242 BA207 ba137 BA138 diode BA142 BA249
    Text: K8A2815ET B M FLASH MEMORY Document Title 128M Bit (8M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary June 28, 2002 0.1 Revised - Change the "Programmable Wait State" settings in Burst Mode


    Original     		K8A2815ET K8S28158 K8S2815E 000000H 64-Ball BA246 BA139 BA257 ba153 BA242 BA207 ba137 BA138 diode BA142 BA249 PDF

    BA260

    Abstract: BA139 BA138 BA138 diode BA205 BA169 BA251 ba209 BA114 ba148
    Text: K8A2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K8A2815ET 128Mb 54MHz A0-A22 00000FH 00001FH 00002FH 000000H BA260 BA139 BA138 BA138 diode BA205 BA169 BA251 ba209 BA114 ba148 PDF

    ba153

    Abstract: BA138
    Text: K8A2815ET B M FLASH MEMORY Document Title 128M Bit (8M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date 0.0 Preliminary June 28, 2002 0.1 Revised - Change the "Programmable Wait State" settings in Burst Mode


    Original     		K8A2815ET K8S28158 K8S2815E 000000H 64-Ball ba153 BA138 PDF

    T5371

    Abstract: K8A6415EBB
    Text: Application Note June. ‘05 Rising & Falling Time of Output Pin with 90nm Technology Product June , 2005 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng.


    Original     		415ETB, K8A6415EBB) 128Mb/64Mb K8A2815ETB, K8A2815EBB, K8A6415ETB, T5371 K8A6415EBB PDF

    SAMSUNG MCP

    Abstract: MCP Samsung CM1453-04CP CMD
    Text: Application Note for OTP Program June, 2005 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng. Eng. Team Team The The Leader Leader in in Memory Memory Technology


    Original     		K8A5615ETA, K8A5615EBA, K8A2815ETB, K8A2815EBB, K8A6415ETB, K8A6415EBB SAMSUNG MCP MCP Samsung CM1453-04CP CMD PDF

    K9HCG08U5M

    Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand
    Text: SAMSUNG Mobile Memory C ontents NAND Flash NOR Flash One NAND Mobile DRAM movi NAND™ SSD Multi Media Card Living in NAND Flash world Living in the stage of 20GB memory after passing through the dark-age of 1GB in 2002, the mobile & consumer electronics now start to feel the needs


    OCR Scan     		120GB 128MB 256MB 128MB 512MB K9HCG08U5M K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand PDF