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    KM416S1120D Search Results

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    KM416S1120D Price and Stock

    Samsung Semiconductor KM416S1120DT-G7

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    Bristol Electronics KM416S1120DT-G7 1,120
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    Quest Components KM416S1120DT-G7 896
    • 1 $2.24
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    KM416S1120DT-G7 424
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    KM416S1120DT-G7 134
    • 1 $1.875
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    KM416S1120DT-G7 18
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    KM416S1120DT-G7 3
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    Samsung Electro-Mechanics KM416S1120DT-G8

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    Bristol Electronics KM416S1120DT-G8 480 2
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    Samsung Semiconductor KM416S1120DT-68

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    Bristol Electronics KM416S1120DT-68 421 2
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    Quest Components KM416S1120DT-68 336
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    Samsung Electro-Mechanics KM416S1120DT-G7

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    Bristol Electronics KM416S1120DT-G7 23 2
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    Samsung Semiconductor KM416S1120DT-G10

    IC,SDRAM,2X512KX16,CMOS,TSOP,50PIN,PLASTIC
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    Quest Components KM416S1120DT-G10 645
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    KM416S1120D Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM416S1120D Unknown 512K x 16-Bit x 2 Banks Synchronous DRAM LVTTL Original PDF
    KM416S1120D Samsung Electronics 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Original PDF
    KM416S1120DT Samsung Electronics KM416S1120DT 512KB x 16-Bit x 2 Banks Synchronous DRAM Organization = 1Mx16 Vdd/Vddq(V) = 3.3 Speed(ns) = 55,60,70,80,10 Refresh = - Package = 50TSOP2 Interface = - Production Status = Mass Production Comments = LVTTL Original PDF
    KM416S1120DT-G/F10 Samsung Electronics 512K x 16-Bit x 2 Banks Synchronous DRAM Original PDF
    KM416S1120DT-G/F10 Samsung Electronics 1 M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Scan PDF
    KM416S1120DT-G/F6 Samsung Electronics 512K x 16-Bit x 2 Banks Synchronous DRAM Original PDF
    KM416S1120DT-G/F6 Samsung Electronics 1 M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Scan PDF
    KM416S1120DT-G/F7 Samsung Electronics 512K x 16-Bit x 2 Banks Synchronous DRAM Original PDF
    KM416S1120DT-G/F7 Samsung Electronics 1 M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Scan PDF
    KM416S1120DT-G/F8 Samsung Electronics 512K x 16-Bit x 2 Banks Synchronous DRAM Original PDF
    KM416S1120DT-G/F8 Samsung Electronics 1 M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Scan PDF
    KM416S1120DT-G/FC Samsung Electronics 512K x 16-Bit x 2 Banks Synchronous DRAM Original PDF
    KM416S1120DT-G/FC Samsung Electronics 1 M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Scan PDF

    KM416S1120D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416S1120D CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.4 May 1999 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.4 May. 1999 KM416S1120D CMOS SDRAM Revision History


    Original     		KM416S1120D 16bit KM416S1120D-6 11CLK) 10CLK) /-10uA. KM416S1120DT-G/F8 KM416S1120DT-G/F10 KM416S1120D-Z PDF

    KM416S1120DT

    Abstract: KM416S1120D
    Text: KM416S1120D CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.4 June 1999 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.4 Jun. 1999 KM416S1120D CMOS SDRAM Revision History


    Original     		KM416S1120D 16bit KM416S1120D-7/8 21ns/20ns 67ns/68ns KM416S1120D-6 11CLK) KM416S1120DT KM416S1120D PDF

    epoch t13

    Abstract: SWITCH L3 AC22 AE23 AF23 Ternary CAM "routing tables" epoch
    Text: Preliminary Data Sheet Epoch MultiLayer Switch Chipset APPLICATIONS • • WAN edge routers MultiService platforms • RAS platforms • • • Group Switch/Router DSLAMs LAN PBX core FEATURES AND BENEFITS • • • • • • • • • • • •


    Original     		PDF

    "routing tables"

    Abstract: SWITCH L3 epoch
    Text: Preliminary Data Sheet     APPLICATIONS • • WAN edge routers MultiService platforms • RAS platforms • • • Group Switch/Router DSLAMs LAN PBX core FEATURES AND BENEFITS • • • • • • • • • • • • •


    Original     		PDF

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51 PDF

    UM62256EM-70LL

    Abstract: UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723
    Text: Cross Reference Your Memory Provider Partnumber Brand µPD4218165 NEC µPD4218165 NEC µPD424260 NEC µPD431000A NEC µPD43256B NEC µPD43256B-B NEC µPD43256BGU-70LL NEC µPD43256BGW-70 NEC µPD441000L-B NEC µPD442000L-B NEC µPD442012L-XB NEC µPD444012L-B


    Original     		PD4218165 PD424260 PD431000A PD43256B PD43256B-B PD43256BGU-70LL PD43256BGW-70 PD441000L-B PD442000L-B UM62256EM-70LL UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723 PDF

    KM48S2020

    Abstract: KM48S2120 KM416S1120D KM44S4120D
    Text: Memory Application Team Tel: 82-331-209-5371 Fax: 82-2-760-7990 GRAPHIC MEMORY APPLICATION NOTE Refresh Cycle change from 4K/64ms in C-die to 2K/32ms in 16M SDRAM D-die Refresh cycle time change from 4K/64ms to 2K/32ms This note has been prepared in an attempt to inform you that the refresh cycle time of


    Original     		4K/64ms 2K/32ms 2K/32ms 2K/32ms. KM48S2020 KM48S2120 KM416S1120D KM44S4120D PDF

    LM39401

    Abstract: lm39401t PQFP240 SWITCHING TRANSISTOR C145 samsung r216 ECE-V1VA100P 512K DIGITAL ECHO IC Zener C237 SAMSUNG C105 AR psa 42 c240
    Text: CDB49400 Evaluation Board for CS49400 Family DSP Features Description 8 Discrete analog inputs using CS5360 ADCs 8 Discrete analog outputs using CS4392 DACs Supports 16 Channel decoding capability of the CS49400 1Digital input using the CS8415A S/PDIF receiver


    Original     		CDB49400 CS49400 CS5360 CS4392 CS49400 CS8415A CS8405 CDB49400 CS49400. LM39401 lm39401t PQFP240 SWITCHING TRANSISTOR C145 samsung r216 ECE-V1VA100P 512K DIGITAL ECHO IC Zener C237 SAMSUNG C105 AR psa 42 c240 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416S1120D CMOS SDRAM 1Mx 16 SDRAM 512 K x 16bit X 2 Banks Synchronous DRAM LVTTL Revision 1.2 March 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 Mar. 1999 ELECTRONiCS KM416S1120D CMOS SDRAM Revision History


    OCR Scan     		KM416S1120D 16bit KM416S1120D-Z 125MHz KM416S1120D-7/8@ 416S1120D-6 416S1120D-7 50-TSOP2-400F PDF

    KM416S1120D

    Abstract: No abstract text available
    Text: KM416S1120D CMOS SDRAM 1Mx 16 SDRAM 5 12K X 16bit X 2 Banks Synchronous DRAM LVTTL Revision 1.4 June 1999 Samsung Electronics reserves the right to change products or specification w ithout notice. Rev. 1.4 Jun. 1999 KM416S1120D CMOS SDRAM R evision H istory


    OCR Scan     		KM416S1120D 512Kx 16bit KM416S1120D-7/8 ns/20ns 67ns/68ns KM416S1120D-6 11CLK) KM416S1120D PDF