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Micron Technology Inc KM44C1003DJ-6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	KM44C1003DJ-6		500			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	KM44C1003DJ-6		400			1 $7.098 10 $7.098 100 $4.3771 1000 $3.9039 10000 $3.9039	Buy Now
SEC KM44C1003DJ-6
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Bristol Electronics	KM44C1003DJ-6		239			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	KM44C1003DJ-6		191			1 $8.5176 10 $8.5176 100 $5.2525 1000 $4.6847 10000 $4.6847	Buy Now
UNKNOWN KM44C1003DJ-60
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Bristol Electronics	KM44C1003DJ-60		95			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samsung Semiconductor KM44C1003DJ-60 IC,DRAM,FAST PAGE,1MX4,CMOS,SOJ,26PIN,PLASTIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	KM44C1003DJ-60		232			1 $4.2 10 $2.1 100 $1.96 1000 $1.96 10000 $1.96	Buy Now
	KM44C1003DJ-60		32			1 $4.5 10 $2.25 100 $2.25 1000 $2.25 10000 $2.25	Buy Now
Samsung Semiconductor KM44C1003DJ6 1M X 4BIT CMOS QUAD CAS DRAM WITH FAST PAGE MODE Fast Page DRAM, 1MX4, 60ns, CMOS, PDSO24
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	KM44C1003DJ6		19,545			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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KM44C1003DJ Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
KM44C1003DJ-5		Samsung Electronics	1M x 4-Bit CMOS Quad CAS DRAM with Fast Page Mode		Original	PDF
KM44C1003DJ-6		Samsung Electronics	1M x 4-Bit CMOS Quad CAS DRAM with Fast Page Mode		Original	PDF
KM44C1003DJ-7		Samsung Electronics	1M x 4-Bit CMOS Quad CAS DRAM with Fast Page Mode		Original	PDF

KM44C1003DJ Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
KMM5361203C2W Abstract: KMM5361203C2WG km416c1200 KM44C1003 Text: DRAM MODULE KMM5361203C2W/C2WG Revision History Version 0.0 November 1997 • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5361203CW/CWG to KMM5361203C2W/C2WG caused by PCB revision . -2- Rev. 0.0 (Nov. 1997) DRAM MODULE	Original	KMM5361203C2W/C2WG KMM5361203CW/CWG KMM5361203C2W/C2WG 1Mx16 KMM5361203C2W 1Mx36bits 1Mx16bits KMM5361203C2WG km416c1200 KM44C1003	PDF
1MX16 Abstract: KMM5361203C2W KMM5361203C2WG Text: DRAM MODULE KMM5361203C2W/C2WG 1Mx36 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 -1- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5361203C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5361203CW/CWG to KMM5361203C2W/C2WG caused by PCB revision .	Original	KMM5361203C2W/C2WG 1Mx36 1MX16 KMM5361203CW/CWG KMM5361203C2W/C2WG KMM5361203C2W KMM5361203C2WG	PDF
UG3M13601PBT Abstract: UG3M13601PBG Text: UG3M13601PBG T Revision History Mar 26 , 1999 Rev - B Nov 11 , 1998 Rev - A Added More Detailed Dimension Information Of PCB , Full Data sheet Changed to new format. Data sheet released. 45388 Warm Springs Blvd. Fremont, CA. 94539 Tel: (510) 668-2088 Fax: (510) 661-2788	Original	UG3M13601PBG 72Pin 1Mx16 400mil 300mil UG3M13601PBT	PDF
TAA 691 Abstract: KM44C1003 Text: KM44C1003D CMOS DRAM 1M x 4bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power consumption(Normal), and package type (SOJ or TSOP-II) are	Original	KM44C1003D 4C1003D 300mil TAA 691 KM44C1003	PDF
1MX16 Abstract: KMM5362203C2W KMM5362203C2WG Text: DRAM MODULE KMM5362203C2W/C2WG 2Mx36 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 -1- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5362203C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5362203CW/CWG to KMM5362203C2W/C2WG caused by PCB revision .	Original	KMM5362203C2W/C2WG 2Mx36 1MX16 KMM5362203CW/CWG KMM5362203C2W/C2WG KMM5362203C2W KMM5362203C2WG	PDF
TAA 691 Abstract: No abstract text available Text: KM44C1003D CMOS DRAM 1M x 4bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power consumption(Normal), and package type (SOJ or TSOP-II) are	Original	KM44C1003D 4C1003D 300mil TAA 691	PDF
KMM5362203C2W Abstract: KMM5362203C2WG km416c1200 KM44C1003 Text: DRAM MODULE KMM5362203C2W/C2WG Revision History Version 0.0 November 1997 • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5362203CW/CWG to KMM5362203C2W/C2WG caused by PCB revision . -2- Rev. 0.0 (Nov. 1997) DRAM MODULE	Original	KMM5362203C2W/C2WG KMM5362203CW/CWG KMM5362203C2W/C2WG 1Mx16 KMM5362203C2W 2Mx36bits 1Mx16bits KMM5362203C2WG km416c1200 KM44C1003	PDF
74118 Abstract: ttl 74118 1FT65 D0341A4 ci 74118 GD341 1MX4 1003-D Text: KM44C1003DJ CMOS DRAM E LE C T R O N IC S 1M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode Quad CA S C M O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the sam e row. Access time -5, -6 or -7 , powér	OCR Scan	KM44C 1003D 16Mx4, 512Kx8) KM44C1003DJ 7Tb4142 003Mlfi^ 74118 ttl 74118 1FT65 D0341A4 ci 74118 GD341 1MX4 1003-D	PDF
Untitled Abstract: No abstract text available Text: KM44C 1 003 DJ CMOS D R AM ELECTRONICS 1M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , powér	OCR Scan	KM44C KM44C1003DJ G03416B 00341f	PDF
rb414 Abstract: KM44C1003 Text: KM44C1003DT CMOS DR A M ELECTRONICS 1M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a fam ily of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power	OCR Scan	KM44C HHHHHHI-INMHHM01 KM44C1003DT rb414 KM44C1003	PDF
Untitled Abstract: No abstract text available Text: DRAM MODULE KMM5361203C2W/C2WG 1Mx36 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) ELECTRONICS DRAM MODULE KMM5361203C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5361203CW /CWG to KMM5361203C2W /C2W G caused by PCB revision .	OCR Scan	KMM5361203C2W/C2WG 1Mx36 1MX16 KMM5361203CW KMM5361203C2W KMM5361203C2W/C2WG 5361203C2W	PDF
Untitled Abstract: No abstract text available Text: KM44C1003DT CMOS DRAM ELECTR O NICS 1 M x 4 B i t CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power	OCR Scan	KM44C1003DT 71b4142 44C1003DT) 7Rb4142	PDF
Untitled Abstract: No abstract text available Text: KM44C1003D CMOS PRAM 1M x 4bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power consumption(Normal), and package type (SOJ or TSOP-II) are	OCR Scan	KM44C1003D	PDF
Untitled Abstract: No abstract text available Text: DRAM MODULE KMM5362203BW/BWG KMM5362203BW/BWG with Fast Page Mode 2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM5362203BW is a 2Mx36bits Dynamic RAM high density memory module. The Samsung KMM5362203BW consists of four CMOS 1Mx16bits DRAMs	OCR Scan	KMM5362203BW/BWG KMM5362203BW/BWG 1Mx16 KMM5362203BW 2Mx36bits 1Mx16bits 42-pin 24-pin 72-pin	PDF

CX1218 Abstract: No abstract text available Text: KM44C1003D CMOS DRAM 1M x 4bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power consumption(Normal or Low power), and package type (SOJ or	OCR Scan	KM44C1003D 1024cycles CX1218	PDF
Untitled Abstract: No abstract text available Text: KM44C1003D CMOS DRAM 1M x 4bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power consumption(Normal or Low power), and package type (SOJ or	OCR Scan	KM44C1003D 1024cycles	PDF