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    KM44C4000 Price and Stock

    Samsung Semiconductor KM44C4000AJ-5

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    Bristol Electronics KM44C4000AJ-5 16
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    Samsung Semiconductor KM44C4000AT-6

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    Bristol Electronics KM44C4000AT-6 5
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    Quest Components KM44C4000AT-6 47
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    Samsung Semiconductor KM44C4000BK-6

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    Bristol Electronics KM44C4000BK-6 4
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    Samsung Semiconductor KM44C4000AK6

    4M X 4 FAST PAGE DRAM Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24
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    ComSIT USA KM44C4000AK6 413
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    Samsung Semiconductor KM44C4000ASR6

    Electronic Component
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    ComSIT USA KM44C4000ASR6 8
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    KM44C4000 Datasheets (29)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM44C4000 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    KM44C4000-6 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM44C4000-7 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM44C4000-8 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM44C4000C Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4000CK-5 Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4000CK-6 Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4000CK-L-5 Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4000CKL-5 Samsung Electronics 4M x 4-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM44C4000CK-L-6 Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4000CKL-6 Samsung Electronics 4M x 4-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF
    KM44C4000CS-5 Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4000CS-6 Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4000CS-L-5 Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4000CSL-5 Samsung Electronics 4M x 4-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM44C4000CS-L-6 Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4000CSL-6 Samsung Electronics 4M x 4-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF
    KM44C4000J-6 Samsung Electronics 4M x 4 Bit CMOS DRAM with Fast Page Mode Scan PDF
    KM44C4000J-7 Samsung Electronics 4M x 4 Bit CMOS DRAM with Fast Page Mode Scan PDF
    KM44C4000J-8 Samsung Electronics 4M x 4 Bit CMOS DRAM with Fast Page Mode Scan PDF

    KM44C4000 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    KM44C4000C

    Abstract: KM44C4100C KM44V4000C KM44V4100C V4100C
    Text: KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.


    Original     		KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C ba4V4100C 300mil KM44C4000C KM44C4100C KM44V4000C KM44V4100C V4100C PDF

    KM44C4000C

    Abstract: KM44C4100C KM44V4000C KM44V4100C
    Text: KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.


    Original     		KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C ba4V4100C 300mil KM44C4000C KM44C4100C KM44V4000C KM44V4100C PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the sam e row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power consum ption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this fam ily have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.


    OCR Scan     		KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C 4V4000C, PDF

    KM44C4000B

    Abstract: No abstract text available
    Text: KM44C4000B S CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle


    OCR Scan     		KM44C4000B KM44C4000BS PDF

    44C4000

    Abstract: KM44C4000
    Text: KM44C4000 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		KM44C4000 44C4000-6 110ns 44C4000-7 130ns 150ns 24-LEAD 44C4000 KM44C4000 PDF

    Untitled

    Abstract: No abstract text available
    Text: SA M S UN G E L E C T R O N I C S INC b?E D • 7^4142 KM44C4000L OOlblbfl Gñl ■ SMGK CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C4000L is a CMOS high speed 4,194,304 x 4 Dynamic Random Access Memory. Its de­


    OCR Scan     		KM44C4000L KM44C4000L 110ns KM44C4000L-7 130ns KM44C4000L-8 KM44C4000L-6 150ns 47fiF PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44C4000 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION * Perform ance range: The Samsung KM 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		KM44C4000 44C4000-7 130ns 150ns 44C4000-6 100/jF 24-LEAD PDF

    KM44C4000A

    Abstract: KM44C4000AT KM44C4000
    Text: KM44C4000A/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: • • • • • • • • • • • • tRAC tCAC tR C KM44C4000A/AL/ALL/ASL-5 50ns 13ns 90ns KM44C4000A/AL/ALL/ASL-6


    OCR Scan     		KM44C4000A/AL/ALL/ASL 24-LEAD 300MIL) 300MIL, 400MIL) KM44C4000A KM44C4000AT KM44C4000 PDF

    C4000C

    Abstract: No abstract text available
    Text: KM44C4000C, KM44C4100C KM44V4000C, KM44V410QC CMOS ORAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs, Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref ), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-H) are optional features of this family. All of this family have CÀS-before-


    OCR Scan     		KM44C4000C, KM44C4100C KM44V4000C, KM44V410QC 64ms/32ms C4000C PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power co


    OCR Scan     		KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C 300mil PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44C4000L CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C4000L is a CMOS high speed 4,194,304 x 4 Dynamic Random Access Memory. Its de­ sign is optimized for high performance applications


    OCR Scan     		KM44C4000L KM44C4000L KM44C4000Lit KM44C40C0L 24-LEAD PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44C4000L CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM44C4000L is a CMOS high speed 4,194,304 x 4 D ynam ic Random A ccess Memory. Its de­ sign is o p tim ized fo r high perform ance ap p lica tio n s


    OCR Scan     		KM44C4000L KM44C4000L KM44C4000L-6 110ns KM44C4000L-7 130ns KM44C4000L-8 150ns 100/iF PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44C4000A/AL/ALL/ASL C M O S DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tC A C tR C KM44C4000A/AL/ALL/ASL-5 50ns 13ns 90ns KM44C4000A/AUALUASL-6 60ns 15ns 110ns KM44C4000A/AL/ALL/ASL-7 70ns


    OCR Scan     		KM44C4000A/AL/ALL/ASL KM44C4000A/AL/ALL/ASL-5 KM44C4000A/AUALUASL-6 110ns KM44C4000A/AL/ALL/ASL-7 130ns KM44C4000A/AL/ALL/ASL-8 150ns 24-LEAD PDF

    KM44C4000-7

    Abstract: KM44C4000-8 KM44C4000 KM44C4000-6 dram 4mx4 taa 723 304X4
    Text: KM44C4000 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 4 C 4 0 0 0 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random A ccess M em ory. Its design is optim ized fo r high perform ance applications


    OCR Scan     		KM44C4000 KM44C4000-6 110ns KM44C4000-7 130ns KM44C4000-8 150ns cycles/64ms KM44C4000 304X4 dram 4mx4 taa 723 PDF

    tca 761

    Abstract: 44C4000-6 KM44C4000
    Text: CMOS DRAM KM44C4000 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		KM44C4000 44C4000 44Cching 24-LEAD tca 761 44C4000-6 KM44C4000 PDF

    KM44C4100A

    Abstract: KM44C4000a KM44V4100A
    Text: KM44C4000A, KM44C4100A KM44V4000A, KM44V4100A CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		KM44C4000A, KM44C4100A KM44V4000A, KM44V4100A KM44C4000a KM44V4100A PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS DRAM KM44C4000 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		KM44C4000 44C4000 cycles/64m 44C4000J PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44C4000B, KM44C4100B KM44V4000B, KM44V4100B CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle


    OCR Scan     		KM44C4000B, KM44C4100B KM44V4000B, KM44V4100B 0D232bc PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44C4000BK CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a lamily ol 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle


    OCR Scan     		KM44C4000BK 16Mx4, 512Kx8) 7Tb4142 GG34404 7Tb4142 G344D5 PDF

    cd-rom circuit diagram

    Abstract: km44c4000bk KM44C4100B
    Text: KM44C4000BK ELECTRONICS CMOS D R A M 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 4,194,304 x 4 bit Fast Page Mods CMOS DRAMs. Fast Pag 9 Mods offers high speed random access of mem ory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle


    OCR Scan     		KM44C4000BK b4142 cd-rom circuit diagram km44c4000bk KM44C4100B PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44C4000L CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C4000L is a CMOS high speed 4,194,304 x 4 Dynamic Random Access Memory. Its de­ sign is optimized for high performance applications


    OCR Scan     		KM44C4000L KM44C4000L-6 KM44C4000L-7 KM44C4000L-8 110ns 130ns 150ns KM44C4000L PDF

    KM44C4000A

    Abstract: km44c4100a km44v4100a
    Text: KM44C4000A, KM44C4100A KM44V4000A, KM44V4100A CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		KM44C4000A, KM44C4100A KM44V4000A, KM44V4100A KM44C4000A km44c4100a km44v4100a PDF

    KM44C4000BS

    Abstract: KM44C4000BS 6 KM44C4000B
    Text: KM44C4000BS ELECTRONICS CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 4,194,304 x 4 bit Fast Page Mods CMOS DRAMs. Fast Page Mode offers high speed random access of mem ory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle


    OCR Scan     		KM44C4000B consumpt47 KM44C4000BS 7Sb4145 003442b KM44C4000BS KM44C4000BS 6 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E » • 7 ^ b m 4 2 DOlblSl flôfi KM44C4000 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its


    OCR Scan     		KM44C4000 130ns 150ns 44C4000-7 44C4000-8 24-LEAD PDF